Method to connect a magnetic device to a CMOS transistor

1. A method of fabricating a magnetic random access memory device comprising:

providing a metal contact to a CMOS landing pad in a substrate and covering said metal contact with a dielectric layer;

opening a via in said dielectric layer thereby exposing said metal contact;

forming a metal ring contact in said via wherein a filling layer is formed in a center of said metal ring and wherein a bottom of said metal ring contact underlying said filling layer is metal; and

providing a magnetic tunnel junction (MTJ) structure on said metal ring contact.

2. The method according to claim 1 wherein said magnetic random access memory device comprises an in-plane or out-of-plane spin-torque-transfer random access memory device, a spin value read head or sensor, or other spintronic device.

3. The method according to claim 1 wherein said dielectric layer comprises a first layer of silicon nitride having a thickness of between about 300 and 500 Angstroms and a second layer of silicon dioxide over said first layer having a thickness of between about 1000 and 3000 Angstroms.

4. The method according to claim 1 wherein forming a metal ring contact further comprises:

opening a via in said dielectric layer thereby exposing said metal contact;

depositing a metal film conformally within said opening;

depositing a filling layer over said metal film; and

polishing said filling layer and said metal film, leaving said metal film only within said opening and leaving said filling layer overlying said metal film at the bottom of said opening filling all space within sidewalls of said metal film within said opening thereby forming a metal ring contact having said filling layer in a center of said metal ring.

5. The method according to claim 4 wherein depositing a metal film comprises depositing a single layer metal film or a multiple layer metal film.

6. The method according to claim 4 wherein depositing a metal film further comprises:

depositing a first tantalum layer in said opening;

depositing a copper layer over said tantalum layer; and

depositing a second tantalum layer over said copper layer.

7. The method according to claim 4 wherein a thickness of said metal film is more than about 1000 Angstroms thinner than a thickness of said dielectric layer.

8. The method according to claim 4 wherein said polishing comprises chemical mechanical polishing.

9. The method according to claim 1 wherein said filling material is a dielectric layer or conductive or non-conductive composite materials that can provide a smooth surface for MTJ deposition.

10. The method according to claim 1 wherein a bottommost conducting layer of said MTJ electrically contacts said metal ring.

11. A method of fabricating a magnetic random access memory device comprising:

providing a metal contact to a CMOS landing pad in a substrate and covering said metal contact with a dielectric layer;

opening a via in said dielectric layer thereby exposing said metal contact;

depositing a metal film conformally within said opening;

depositing a filling layer over said metal film;

polishing said filling layer and said metal film, leaving said metal film only within said opening and leaving said filling layer overlying said metal film at the bottom of said opening filling all space within sidewalls of said metal film within said opening thereby forming a metal ring contact having said filling layer in a center of said metal ring;

providing a magnetic tunnel junction (MTJ) structure over said metal ring contact wherein said MTJ structure electrically contacts said metal ring contact; and

forming a bit line over said MTJ.

12. The method according to claim 11 wherein said magnetic random access memory device comprises an in-plane or out-of-plane spin-torque-transfer random access memory device, a spin value read head or sensor, or other spintronic device.

13. The method according to claim 11 wherein said dielectric layer comprises a first layer of silicon nitride having a thickness of between about 300 and 500 Angstroms and a second layer of silicon dioxide over said first layer having a thickness of between about 1000 and 3000 Angstroms.

14. The method according to claim 11 wherein depositing a metal film comprises depositing a single layer metal film or a multiple layer metal film.

15. The method according to claim 11 wherein depositing a metal film further comprises:

depositing a first tantalum layer in said opening;

depositing a copper layer over said tantalum layer; and

depositing a second tantalum layer over said copper layer.

16. The method according to claim 11 wherein a thickness of said metal film is more than about 1000 Angstroms thinner than a thickness of said dielectric layer.

17. The method according to claim 11 wherein said filling material is a dielectric layer or conductive or non-conductive composite materials that can provide a smooth surface for MTJ deposition.

18. A spin-torque-transfer magnetic random access memory device comprising:

a metal contact to a CMOS landing pad in a substrate;

a metal ring contact on said metal contact wherein a filling layer is formed in a center of said metal ring and wherein a bottom of said metal ring contact underlying said filling layer is metal; and

a magnetic tunnel junction over said CMOS landing pad and connected to said CMOS landing pad by said metal ring contact.

19. The device according to claim 18 wherein said metal ring contact comprises a single layer metal film or a multiple layer metal film and wherein said filling material is a dielectric layer or conductive or non-conductive composite materials that can provide a smooth surface for MTJ deposition.

20. The device according to claim 19 wherein said multiple layer metal film comprises:

a first tantalum layer comprising said bottom of said metal ring contact and outside of said metal ring;

a copper layer over said tantalum layer; and

a second tantalum layer over said copper layer.