Patent Assignment
Reel/Frame 048692/0917
Assignment of Assignor's Interest
Recorded: 2019-03-25
Pages: 27
Assignor
HEADWAY TECHNOLOGIES, INC.
Executed: 2019-02-04
Assignee
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
8, LI-HSIN ROAD 6, HSINCHU SCIENCE PARK, HSINCHU, 300-78, TAIWAN
Covered Properties
(263)
Seed Layer for Perpendicular Magnetic Anisotropy (PMA) Thin Film
Application:
13/863,545 →
Publication:
US US20140306303A1
Highly Selective Ion Beam Etch Hard Mask for Sub 60NM Mram Devices
Patent:
10,388,862 →
Application:
15/951,873 →
Mtj Cd Variation by Hm Trimming
Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
Method of Forming a Magnetic Tunnel Juction (Mtj) Stacked Layers Having a Metal-Oxide Tunnel Barrier by Oxidizing a Metal Layer with a Maximum Oxygen Pressure of About 10-5 Torr
Application:
14/278,243 →
Publication:
US US20150333254A1
Physical Cleaning with in-Situ Dielectric Encapsulation Layer for Spintronic Device Application
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
Seed Layer for Multilayer Magnetic Materials
Scanning Ferromagnetic Resonance (FMR) for Wafer-Level Characterization of Magnetic Films and Multilayers
Protective Passivation Layer for Magnetic Tunnel Junctions
Post Treatment to Reduce Shunting Devices for Physical Etching Process
Combined Physical and Chemical Etch to Reduce Magnetic Tunnel Junction (Mtj) Sidewall Damage
Methods and Circuits for Programming Stt-Mram Cells for Reducing Back-Hopping
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
Self-Adaptive Halogen Treatment to Improve Photoresist Pattern and Magnetoresistive Random Access Memory (MRAM) Device Uniformity
High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access memory (MRAM) Applications
Multiple Hard Mask Patterning to Fabricate 20nm and Below MRAM Devices
Improving MTJ Device Performance by Controlling Device Shape
Initialization Process for Magnetic Random Access Memory (MRAM) Production
Magnetic Tunnel Junction with Low Defect Rate after High Temperature Anneal for Magnetic Device Applications
Low Resistance MgO Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
Stt-Mram Heat Sink and Magnetic Shield Structure Design for More Robust Read/Write Performance
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spintronic Devices
Nitride Capping Layer for Spin Torque Transfer (STT)-Magnetoresistive Random Access Memory (MRAM)
CMP Stop Layer and Sacrifice Layer for High Yield Small Size MRAM Devices
Multiply Spin-Coated Ultra-Thick Hybrid Hard Mask for Sub 60nm MRAM Devices
Metal/Dielectric/Metal Hybrid Hard Mask to Define Ultra-Large Height Top Electrode for Sub 60nm MRAM Devices
Electrical Testing Apparatus for Spintronics Devices
Fabrication of Large Height Top Metal Electrode for Sub-60nm Magnetoresistive Random Access Memory (MRAM) Devices
Novel Free Layer Structure in Magnetic Random Access Memory (MRAM) for Mo or W Perpendicular Magnetic Anisotropy (PMA) Enhancing Layer
Ion Beam Etching Fabricated Sub 30nm Vias to Reduce Conductive Material Re-Deposition for Sub 60nm MRAM Devices
Method for Fabricating a Magnetic Tunneling Junction (Mtj) Structure
Highly Physical Ion Resistive Spacer to Define Chemical Damage Free Sub 60nm MRAM Devices
Sub 60nm Etchless MRAM Devices by Ion Beam Etching Fabricated T-Shaped Bottom Electrode
Patent:
10,418,547 →
Application:
16/008,629 →
Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process
Maintaining Coercive Field after High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anisotropy
A Method of Etching a Mtj Stack of Layers Utilizing Reactive-Ion-Etch (Rie) or Ion Beam Etch (Ibe) Process
Application:
16/056,770 →
Publication:
US US20200052196A1
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level Characterization of Magnetic Films
Dual Magnetic Tunnel Junction Devices for Magnetic Random Access Memory (MRAM)
Patent:
10,522,746 →
Application:
16/056,791 →
Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
Patent:
10,522,752 →
Application:
16/109,063 →
Self-Aligned Encapsulation Hard Mask to Separate Physically Under-Etched Mtj Cells to Reduce Conductive R-Deposition
Large Height Tree-Like Sub 30nm Vias to Reduce Conductive Material Re-Deposition for Sub 60nm MRAM Devices
Critical Dimension (CD) Uniformity of Photoresist Island Patterns Using Alternating Phase Shifting Mask
Patent:
10,520,818 →
Application:
16/133,869 →
Highly Physical Etch Resistive Photoresist Mask to Define Large Height Sub 30nm Via and Metal Hard Mask for MRAM Devices
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
Multiple Spacer Assisted Physical Etching of Sub 60nm MRAM Devices
Patent:
10,516,102 →
Application:
16/161,139 →
Monolayer-By-Monolayer Growth of MgO Layers using Mg Sublimation and Oxidation
Method for Measuring Saturation magnetization of Magnetic Films and Multilayer Stacks
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
Application:
16/173,201 →
Publication:
US US20190088866A1
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
Minimal Thickness Synthetic Antiferromagnetic (Saf) Structure with Perpendicular Magnetic Anisotropy for Stt-Mram
Method to Make Small Isolated Features with Pseudo-Planarization for Tmr and Mram Applications
A Method of Forming a Magnetic Tunneling Junction (Mtj) Mram Device and a Tunneling Magnetoresistive (Tmr) Read Head
Mram Cell with Flat Topography and Controlled Bit Line to Free Layer Distance and Method of Manufacture
Novel Oxidation Structure/Method to Fabricate a High-Performance Magnetic Tunneling Junction Mram
Magnetic Random Access Memory Array with Coupled Soft Adjacent Magnetic Layer
Mram Cell Structure and Method of Fabrication
Novel Oxidation Structure/Method to Fabricate a High-Performance Magnetic Tunneling Junction Mram
Adaptive Algorithm for Mram Manufacturing
Method of Fabricating Contact Pad for Magnetic Random Access Memory
Patent:
7,122,386 →
Application:
11/231,674 →
Novel Buffer (Seed) Layer in a High Performance Magnetic Tunneling Junction Mram
Mtj Read Head with Sidewall Spacers
Bottom Conductor for Integrated Mram
Reference Cell Scheme for Mram
Mram Cell with Flat Topography and Controlled Bit Line to Free Layer Distance and Method of Manufacture
Multi-State Thermally Assisted Storage
Bottom Conductor for Integrated Mram
Configurable Mram and Method of Configuration
Planar Flux Concentrator for Mram Devices
Mram Cell Structure and Method of Fabrication
Mgo/Nife Mtj for High Performance Mram Application
Novel Programming Scheme for Segmented Word Line Mram Array
Spin Transfer Mram Device with Novel Magnetic Free Layer
Reference Cell Scheme for Mram
Spin Transfer Mram Device with Magnetic Biasing
Method of Magnetic Tunneling Junction Pattern Layout for Magnetic Random Access Memory
Novel Method to Form a Nonmagnetic Cap for the Nife(Free) Mtj Stack to Enhance Dr/R
Mtj Read Head with Sidewall Spacers
Spin Transfer Mram Device with Separated Cpp Assisted Writing
Planar Flux Concentrator for Mram Devices
Multi-State Thermally Assisted Storage
Novel Capping Layer for a Magnetic Tunnel Junction Device to Enhance Dr/R and a Method of Making the Same
Novel Magnetic Tunnel Junction (Mtj) to Reduce Spin Transfer Magnetization Switching Current
Method and Implementation of Stress Test for Mram
Novel Underlayer for High Performance Magnetic Tunneling Junction Mram
Novel Syaf Structure to Fabricate Mbit Mtj Mram
Hafnium Doped Cap and Free Layer for Mram Device
Mram with Super-Paramagnetic Sensing Layer
Composite Hard Mask for the Etching of Nanometer Size Magnetic Multilayer Based Device
Mram with Enhanced Programming Margin
High Performance Mtj Element for Stt-Ram and Method for Making the Same
Spin Transfer Mram Device with Separated Ccp Assisted Writing
Spin Transfer Mram Device with Separated Cpp Assisted Writing
Spin Transfer Mram Device with Separated Cpp Assisted Writing
Boosted Gate Voltage Programming for Spin-Torque Mram Array
Bottom Electrode Mask Design for Ultra-Thin Interlayer Dielectric Approach in Mram Device Fabrication
Novel Free Layer/Capping Layer for High Performance Mram Mtj
Bottom Electrode for Mram Device and Method to Fabricate It
Spin-Torque Mram: Spin-Ram, Array
Method of Double Patterning and Etching Magnetic Tunnel Junction Structures for Spin-Transfer Torque Mram Devices
Spacer Structure in Mram Cell and Method of Its Fabrication
High Density Spin-Transfer Torque Mram Process
Mram with Cross-Tie Magnetization Configuration
Method of High Density Field Induced Mram Process
Patent:
7,919,407 →
Application:
12/590,945 →
Novel Spin Momentum Transfer Mram Design
Method of Mram Fabrication with Zero Electrical Shorting
Low Switching Current Mtj Element for Ultra-High Stt-Ram and a Method for Making the Same
Single Bit Line Smt Mram Array Architecture and the Programming Method
Heat Assisted Switching and Separated Read-Write Mram
Magnetic Memory Capable of Minimizing Gate Voltage Stress in Unselected Memory Cells
Mram with Coupling Valve Switching
Novel Underlayer for High Performance Magnetic Tunneling Junction Mram
Gate Drive Voltage Boost Schemes for Memory Array
Mram with Storage Layer and Super-Paramagnetic Sensing Layer
Low Switching Current Dual Spin Filter (Dsf) Element for Stt-Ram and a Method for Making the Same
Spin Transfer Mram Device with Novel Magnetic Synthetic Free Layer
High Performance Mtj Element for Stt-Ram and Method for Making the Same
Mram with Storage Layer and Super-Paramagnetic Sensing Layer
High Performance Mtj Element for Stt-Ram and Method for Making the Same
Use of Cmp to Contact a Mtj Structure Without Forming a Via
Method of Magnetic Tunneling Layer Processes for Spin-Transfer Torque Mram
Method to Fabricate Thin Metal via Interconnects on Copper Wires in Mram Devices
Structure and Method to Fabricate High Performance Mtj Devices for Spin-Transfer Torque (Stt)-Ram
Novel Bit Line Preparation Method in Mram Fabrication
Design and Fabrication Methods of Partial Cladded Write Line to Enhance Write Margin for Magnetic Random Access Memory
A Process for Manufacturing a Magnetic Tunnel Junction (Mtj) Device
Mram with Storage Layer and Super-Paramagnetic Sensing Layer
High Density Spin-Transfer Torque Mram Process
Mtj Incorporating Cofe/Ni Multilayer Film with Perpendicular Magnetic Anisotropy for Mram Application
Fast and Accurate Current Driver with Zero Standby Current and Features for Boost and Temperature Compensation for Mram Write Circuit
Boosted Gate Voltage Programming for Spin-Torque Mram Array
Spin Transfer Mram Device with Novel Magnetic Synthetic Free Layer
Novel Magnetic Tunnel Junction (Mtj) to Reduce Spin Transfer Magnetizaton Switching Current
Process to Fabricate Bottom Electrode for Mram Device
Read Disturb Free Smt Mram Reference Cell Circuit
High Density Spin-Transfer Torque Mram Process
Bottom Electrode Etching Process in Mram Cell
High Performance Mtj Element for Conventional Mram and for Stt-Ram and a Method for Making the Same
Novel Capping Layer for a Magnetic Tunnel Junction Device to Enhance Dr/R and a Method of Making the Same
Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
Spacer Structure in Mram Cell and Method of Its Fabrication
Pulse Field Assisted Spin Momentum Transfer Mram Design
High Performance Mtj Elements for Stt-Ram and Method for Making the Same
Shared Bit Line Smt Mram Array with Shunting Transistors Between the Bit Lines
Magnetic Tunnel Junction Patterning Using Ta/Tan as Hard Mask
Method of Spin Torque Mram Process Integration
Patent:
8,456,883 →
Application:
13/482,157 →
Novel Magnetic Tunnel Junction (Mtj) to Reduce Spin Transfer Magnetization Switching Current
Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions
Reference Cell Architectures for Small Memory Array Block Activation
Magnetic Tunnel Junction for Mram Applications
MRAM with means of controlling magnetic anisotropy
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Novel Method to Connect a Magnetic Device to a Cmos Transistor
Patent:
8,524,511 →
Application:
13/571,675 →
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Shared Bit Line Smt Mram Array with Shunting Transistors Between Bit Lines
Shared Bit Line Smt Mram Array with Shunting Transistors Between Bit Lines
Shared Bit Line SMT MRAM Array with Shunting Transistors Between Bit Lines
Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications
Replaceable, precise-tracking reference lines for memory products
Structure and Method to Fabricate High Performance Mtj Devices for Spin-Transfer Torque (Stt)-Ram Application
Shared Bit Line Smt Mram Array with Shunting Transistors Between Bit Lines
Novel Underlayer for High Performance Magnetic Tunneling Junction Mram
Magnetic Random Access Memory with Selective Toggle Memory Cells
Reference Averaging for MRAM Sense Amplifiers
Engineered Magnetic Layer with Improved Perpendicular Anisotropy Using Glassing Agents for Spintronic Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Engineered Magnetic Layer with Improved Perpendicular Anisotropy Using Glassing Agents for Spintronic Applications
Composite Hard Mask with Upper Sacrificial Dielectric Layer for the Patterning and Etching of Nanometer Size Mram Devices
Method of Forming a Spin-Transfer Torque Random Acess Memory (Stt-Ram) Device
Magnetic Tunnel Junction for Mram Applications
Reverse Partial Etching Scheme for Magnetic Device Applications
High Performance Mtj Element for Conventional Mram and for Stt-Ram and a Method for Making the Same
Fabrication Method for Embedded Magnetic Memory
Patent:
8,772,051 →
Application:
13/766,990 →
Method and Apparatus for Scrubbing Accumulated Disturb Data Errors in an Array of SMT MRAM Memory Cells Including Rewriting Reference Bits
Magnetic Tunnel Junction for Mram Applications
Method to Reduce Magnetic Film Stress for Better Yield
Spin Torque Transfer Magnetic Tunnel Junction Fabricated with a Composite Tunneling Barrier Layer
Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer
Minimal Thickness Synthetic Antiferromagnetic (Saf) Structure with Perpendicular Magnetic Anisotropy for Stt-Mram
High Thermal Stability Reference Structure with Out-of-Plane Aniotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Mtj Element for Stt Mram
Adaptive Reference Scheme for Magnetic Memory Applications
Storage Element for STT MRAM Applications
Method to Reduce Magnetic Film Stress for Better Yield
High Thermal Stability Free Layer with High Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Bottom Electrode for Mram Device
Stt-Mram Reference Layer Having Substantially Reduced Stray Field and Consisting of a Single Magnetic Domain
Mg Discontinuous Insertion Layer for Improving Mtj Shunt
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Magnetic element with improved out-of-plane anisotropy for spintronic applications
Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications
Fully Compensated Synthetic Antiferromagnet for Spintronics Applications
Hybridized Oxide Capping Layer for Perpendicular Magnetic Anisotropy
Composite Free Layer Within Magnetic Tunnel Junction for Mram Applications
Method and apparatus for scrubbing accumulated data errors from a memory system
Magnetic Tunnel Junction for MRAM Applications
Hybridized Oxide Capping Layer for Perpendicular Magnetic Anisotropy
Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications
Hybridized Oxide Capping Layer for Perpendicular Magnetic Anisotropy
Structure and Method to Fabricate High Performance Mtj Devices for Spin-Transfer Torque (Stt)-Ram Application
MRAM Write Pulses to Dissipate Intermediate State Domains
Method of high density memory fabrication
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/X AND CoX MULTILAYERS WITH IMPROVED OUT-OF-PLANE ANISOTROPY FOR MAGNETIC DEVICE APPLICATIONS
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Magnetic Element with Perpendicular Magnetic Anisotropy for High Coercivity after High Temperature Annealing
Patent:
9,425,387 →
Application:
14/847,433 →
Free Layer with Out-of-Plane Anisotropy for Magnetic Device Applications
Magnetic Tunnel Junction for MRAM Applications
Method of Making a High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications
High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Seed Layer for Multilayer Magnetic Materials
Method to Minimize MTJ Sidewall Damage and Bottom Electrode Redeposition Using IBE Trimming
Seed Layer for Growth of <111> Magnetic Materials
Patent:
9,673,385 →
Application:
15/079,463 →
Adaptive Reference Scheme for Magnetic Memory Applications
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
Implementation of a One Time Programmable Memory Using a Mram Stack Design
Magnetic Tunnel Junction with Low Defect Rate After High Temperature Anneal for Magnetic Device Applications
Spin Transfer Mram Device with Reduced Coefficient of Mtj Resistance Variation
Spacer Assisted Ion Beam Etching of Spin Torque Magnetic Random Access Memory
Patent:
9,871,195 →
Application:
15/465,644 →
New Surface Treatment Method for Dielectric Anti-Reflective Coating (DARC) to Shrink Photoresist Critical Dimension (CD)
Mtj Etching with Improved Uniformity and Profile by Adding Passivation Step
Dielectric Encapsulation Layer for Magnetic Tunnel Junction (MTJ) Devices Using Radio Frequency (RF) Sputtering
Patent:
9,935,261 →
Application:
15/479,522 →
MgO Insertion into Free Layer for Magnetic Memory Applications
Patent:
9,966,529 →
Application:
15/461,779 →
MTJ Device Process/Integration Method with Pre-Patterned Seed Layer
Patent:
9,972,777 →
Application:
15/479,497 →
Maintaining Coercive Field after High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anisotropy
Patent:
10,014,465 →
Application:
15/477,288 →
High Temperature Volatilization of Sidewall Materials from Patterned Magnetic Tunnel Junctions
Patent:
10,038,138 →
Application:
15/728,839 →
Etch Selectivity by Introducing Oxidants to Noble Gas During Physical Magnetic Tunnel Junction (Mtj) Etching
Patent:
10,043,851 →
Application:
15/668,113 →
Memory Structure having a Magnetic Tunnel Junction (MTJ) Self-Aligned to a T-Shaped Bottom Electrode, and Method of Manufacturing the Same
Patent:
10,069,064 →
Application:
15/653,180 →
Adaptive Reference Scheme for Magnetic Memory Applications
Method to Remove Sidewall Damage After MTJ Etching
Magnetic Pulse Recording Scheme in Perpendicular Magnetic Recording
Patent:
10,115,415 →
Application:
15/933,486 →
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
Magnetic Tunnel Junction (MTJ) Performance by Introducing Oxidants to Methanol with or without Noble Gas during MTJ Etch
Patent:
10,153,427 →
Application:
15/856,129 →
Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
MgO Insertion into Free Layer for Magnetic Memory Applications
Fully Compensated Synthetic Ferromagnet for Spintronics Applications
Mgo Insertion into Free Layer for Magnetic Memory Applications
PCT:
PCT/US2018/019841 ↗
Scanning Ferromagnetic Resonance (Fmr) for Wafer-Level Characterization of Magnetic Films and Multilayers
PCT:
PCT/US2018/020361 ↗
Spacer Assisted Ion Beam Etching of Spin Torque Magnetic Random Access Memory
PCT:
PCT/US2018/020594 ↗
A Method to Remove Sidewall Damage After Mtj Etching
PCT:
PCT/US2018/020854 ↗
Maintaining Coercive Field After High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anisotropy
PCT:
PCT/US2018/021007 ↗
Dielectric Encapsulation Layer for Magnetic Tunnel Junction (Mtj) Devices Using Radio Frequency (Rf) Sputtering
PCT:
PCT/US2018/021248 ↗
Mtj Device Process/Integration Method with Pre-Patterned Seed Layer
PCT:
PCT/US2018/021286 ↗
Post Treatment to Reduce Shunting Devices for Physical Etching Process
PCT:
PCT/US2018/021452 ↗
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
PCT:
PCT/US2018/032637 ↗
Silicon Oxynitride Based Encapsulation Layer for Magnetic Tunnel Junctions
PCT:
PCT/US2018/035097 ↗
Etch-Less Self-Aligned Magnetic Tunnel Junction (Mtj) Device Structure
PCT:
PCT/US2018/035101 ↗
High Temperature Volatilization of Sidewall Materials from Patterned Magnetic Tunnel Junctions
PCT:
PCT/US2018/055042 ↗
High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (Stt) Magnetic Random Access Memory (Mram) Applications
PCT:
PCT/US2018/055043 ↗
Free Layer Sidewall Oxidation and Spacer Assisted Magnetic Tunnel Junction (Mtj) Etch for High Performance Magnetoresistive Random Access Memory (Mram) Devices
PCT:
PCT/US2018/056447 ↗
Multiple Hard Mask Patterning to Fabricate 20NM and Below Mram Devices
PCT:
PCT/US2018/056480 ↗
Improving Mtj Device Performance by Controlling Device Shape
PCT:
PCT/US2018/059802 ↗
Initialization Process for Magnetic Random Access Memory (Mram) Production
PCT:
PCT/US2018/059803 ↗
Improved Magnetic Tunnel Junction (Mtj) Performance by Introducting Oxidants to Methanol with or Without Noble Gas During Mtj Etch
PCT:
PCT/US2018/064423 ↗
Stt-Mram Heat Sink and Magnetic Shield Structure Design for More Robust Read/Write Performance
PCT:
PCT/US2018/067951 ↗
Ferromagnet Resonance (Fmr) Electrical Testing Apparatus for Spintronic Devices
PCT:
PCT/US2019/013963 ↗
Nitride Capping Layer for Spin Torque Trannsfer (Stt) Magnetoresistive Random Access Memory (Mram)
PCT:
PCT/US2019/015129 ↗
Related Assignments
(20)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 30, 2012
From: JAN, GUENOLE; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 028126/0308 →
Assignment of Assignor's Interest
Jul 24, 2013
From: MORIYAMA, TAKAHIRO; WANG, YU-JEN; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 030864/0902 →
Assignment of Assignor's Interest
Jun 10, 2014
From: LIU, HUANLONG; ZHU, JIAN; PI, KEYU; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 033062/0413 →
Assignment of Assignor's Interest
Sep 16, 2015
From: WANG, YU-JEN; PI, KEYU; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 036573/0385 →
Assignment of Assignor's Interest
Sep 1, 2016
From: THOMAS, LUC; JAN, GUENOLE; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 039615/0804 →
Assignment of Assignor's Interest
Apr 11, 2017
From: IWATA, JODI MARI; JAN, GUENOLE; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 041966/0572 →
Assignment of Assignor's Interest
Apr 25, 2017
From: GUISAN, SANTIAGO SERRANO; THOMAS, LUC; LE, SON; JAN, GUENOLE
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 042138/0545 →
Assignment of Assignor's Interest
Apr 25, 2017
From: WANG, YU-JEN; SHEN, DONGNA; SUNDAR, VIGNESH; PATEL, SAHIL
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 042139/0808 →
Assignment of Assignor's Interest
Jul 20, 2017
From: SUNDAR, VIGNESH; WANG, YU-JEN; SHEN, DONGNA; PATEL, SAHIL
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 043052/0951 →
Assignment of Assignor's Interest
Jul 20, 2017
From: SHEN, DONGNA; WANG, YU-JEN; TONG, RU-YING; SUNDAR, VIGNESH
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 043052/0909 →
Assignment of Assignor's Interest
Jul 20, 2017
From: LIU, HUANLONG; JAN, GUENOLE; LEE, YUAN-JEN; ZHU, JIAN
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 043052/0989 →
Assignment of Assignor's Interest
Oct 10, 2017
From: YANG, YI; SHEN, DONGNA; WANG, YU-JEN; HAQ, JESMIN
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 043825/0729 →
Assignment of Assignor's Interest
Nov 15, 2017
From: JAN, GUENOLE; IWATA, JODI MARI; TONG, RU-YING; LIU, HUANLONG
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 044129/0663 →
Assignment of Assignor's Interest
Nov 15, 2017
From: YANG, YI; WANG, YU-JEN; HAQ, JESMIN; ZHONG, TOM
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 044129/0910 →
Assignment of Assignor's Interest
Dec 13, 2017
From: HAQ, JESMIN; ZHONG, TOM; TENG, ZHONGJIAN; LAM, VINH
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 044390/0827 →
Assignment of Assignor's Interest
May 30, 2018
From: YANG, YI; SHEN, DONGNA; WANG, YU-JEN
To: HEADWAY TECHNOLOGIES, INC
Reel/Frame 045936/0913 →
Assignment of Assignor's Interest
Jul 19, 2018
From: SHEN, DONGNA; YANG, YI; HAQ, JESMIN; WANG, YU-JEN
To: HEADWAY TECHNOLOGIES, INC
Reel/Frame 046400/0641 →
Assignment of Assignor's Interest
Oct 30, 2018
From: JAN, GUENOLE; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 047356/0328 →
Assignment of Assignor's Interest
Oct 26, 2022
From: SUNDAR, VIGNESH; WANG, YU-JEN; SHEN, DONGNA; PATEL, SAHIL
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 061549/0025 →
Assignment of Assignor's Interest
Oct 27, 2022
From: SUNDAR, VIGNESH; WANG, YU-JEN; SHEN, DONGNA; PATEL, SAHIL
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 061563/0803 →