Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications
View Patent ↗A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X) n or (CoX) n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
1. A magnetic tunnel junction (MTJ), comprising:
(a) a seed layer formed on a substrate and comprising one or more of Hf, NiFeCr, and NiCr that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer;
(b) a reference layer having a laminated structure with a plurality of “n” layers that are represented by (Co/X) n or (CoX) n where X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, and Si, CoX is a disordered alloy, and the reference layer contacts a top surface of the seed layer and has intrinsic PMA.
2. The MTJ of claim 1 wherein the seed layer has a thickness between about 10 and 300 Angstroms.
3. The MTJ of claim 1 further comprised of a magnetic layer made of CoFeB, CoFe, or combinations thereof that contacts a top surface of the laminated structure.
4. The MTJ of claim 3 wherein the magnetic layer consists of CoFeB and the MTJ is further comprised of a Ta layer about 0.5 to 3 Angstroms thick that is formed between the top surface of the laminated stack and the magnetic layer.
5. The MTJ of claim 1 wherein n is from 2 to 30.