Patent Assignment
Reel/Frame 047604/0081
Assignment of Assignor's Interest
Recorded: 2018-11-20
Pages: 6
Assignor
MAGIC TECHNOLOGIES, INC.
Executed: 2018-11-13
Assignee
HEADWAY TECHNOLOGIES, INC.
678 S. HILLVIEW DRIVE, MILPITAS, CALIFORNIA, 95035
Covered Properties
(56)
Mram Cell Structure and Method of Fabrication
Novel Buffer (Seed) Layer in a High Performance Magnetic Tunneling Junction Mram
Novel Oxidation Structure/Method to Fabricate a High-Performance Magnetic Tunneling Junction Mram
Mram Cell Structure and Method of Fabrication
Mtj Read Head with Sidewall Spacers
Bottom Conductor for Integrated Mram
Reference Cell Scheme for Mram
Multi-State Thermally Assisted Storage
Magnetic Random Access Memory with Selective Toggle Memory Cells
Magnetic Random Access Memory with Selective Toggle Memory Cells
Planar Flux Concentrator for Mram Devices
Spin Transfer Mram Device with Separated Cpp Assisted Writing
Spin Transfer Mram Device with Separated Ccp Assisted Writing
Spin Transfer Mram Device with Separated Cpp Assisted Writing
Novel Capping Layer for a Magnetic Tunnel Junction Device to Enhance Dr/R and a Method of Making the Same
Novel Magnetic Tunnel Junction (Mtj) to Reduce Spin Transfer Magnetizaton Switching Current
Novel Magnetic Tunnel Junction (Mtj) to Reduce Spin Transfer Magnetization Switching Current
Novel Underlayer for High Performance Magnetic Tunneling Junction Mram
Novel Underlayer for High Performance Magnetic Tunneling Junction Mram
A Process for Manufacturing a Magnetic Tunnel Junction (Mtj) Device
Mram with Storage Layer and Super-Paramagnetic Sensing Layer
Mram with Storage Layer and Super-Paramagnetic Sensing Layer
High Performance Mtj Element for Stt-Ram and Method for Making the Same
High Performance Mtj Element for Stt-Ram and Method for Making the Same
High Performance Mtj Elements for Stt-Ram and Method for Making the Same
Boosted Gate Voltage Programming for Spin-Torque Mram Array
Process to Fabricate Bottom Electrode for Mram Device
Bottom Electrode for Mram Device
High Density Spin-Transfer Torque Mram Process
Spacer Structure in Mram Cell and Method of Its Fabrication
High Density Spin-Transfer Torque Mram Process
Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same
Mram with Storage Layer and Super-Paramagnetic Sensing Layer
Method of Forming a Spin-Transfer Torque Random Acess Memory (Stt-Ram) Device
Spin Transfer Mram Device with Novel Magnetic Synthetic Free Layer
High Performance Mtj Element for Conventional Mram and for Stt-Ram and a Method for Making the Same
Shared Bit Line Smt Mram Array with Shunting Transistors Between Bit Lines
Shared Bit Line SMT MRAM Array with Shunting Transistors Between Bit Lines
Shared Bit Line Smt Mram Array with Shunting Transistors Between Bit Lines
Shared Bit Line Smt Mram Array with Shunting Transistors Between Bit Lines
Magnetic Tunnel Junction for Mram Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications
Structure and Method to Fabricate High Performance Mtj Devices for Spin-Transfer Torque (Stt)-Ram Application
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Magnetic Tunnel Junction for MRAM Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Magnetic Tunnel Junction for MRAM Applications
Spin Transfer Mram Device with Reduced Coefficient of Mtj Resistance Variation
Related Assignments
(19)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
May 19, 2004
From: HONG, LIUBO; ZHONG, TOM; YANG, LIN
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015358/0537 →
Assignment of Assignor's Interest
Jun 16, 2010
From: APPLIED SPINTRONICS, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 024539/0624 →
Assignment of Assignor's Interest
Oct 17, 2018
From: GUO, YIMIN; CHIEN, JEFF
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047198/0268 →
Assignment of Assignor's Interest
Oct 22, 2018
From: HORNG, CHENG T.; TONG, RU-YING
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047256/0646 →
Assignment of Assignor's Interest
Oct 22, 2018
From: HORNG, CHENG T.; TONG, RU-YING
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047257/0353 →
Assignment of Assignor's Interest
Oct 25, 2018
From: HONG, LIUBO; ZHONG, TOM; YANG, LIN
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 047317/0650 →
Assignment of Assignor's Interest
Oct 25, 2018
From: MIN, TAI; WANG, PO-KANG
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047317/0660 →
Assignment of Assignor's Interest
Oct 25, 2018
From: CAO, WEI; TORNG, CHYU-JIUH; HORNG, CHENG; TONG, RUYING
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047317/0663 →
Assignment of Assignor's Interest
Oct 25, 2018
From: HORNG, CHENG T.; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 047321/0485 →
Assignment of Assignor's Interest
Oct 25, 2018
From: GUO, YIMIN; WANG, PO-KANG
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047321/0688 →
Assignment of Assignor's Interest
Oct 25, 2018
From: YANG, HSU KAI; WANG, PO-KANG; SHI, XIZENG
To: MAGIC TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 047305/0942 →
Assignment of Assignor's Interest
Oct 25, 2018
From: YANG, LIN
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 047306/0079 →
Assignment of Assignor's Interest
Oct 30, 2018
From: GUO, YIMIN
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047356/0295 →
Assignment of Assignor's Interest
Nov 2, 2018
From: APPLIED SPINTRONICS TECHNOLOGY, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047391/0493 →
Assignment of Assignor's Interest
Nov 2, 2018
From: APPLIED SPINTRONICS, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047391/0539 →
Assignment of Assignor's Interest
Nov 7, 2018
From: GUO, YIMIN
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047437/0351 →
Assignment of Assignor's Interest
Nov 8, 2018
From: HORNG, CHENG T.; HONG, LIUBO; TONG, RU-YING; CHEN, YU-HSIA
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 047455/0404 →
Assignment of Assignor's Interest
Nov 12, 2018
From: APPLIED SPINTRONICS TECHNOLOGY, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 047473/0875 →
Assignment of Assignor's Interest
Mar 25, 2019
From: HEADWAY TECHNOLOGIES, INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 048692/0917 →