Hybridized oxide capping layer for perpendicular magnetic anisotropy
View Patent ↗A hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining reference layer. The HOCL has an interface oxide layer adjoining the reference layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during an anneal to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the reference layer.
1. A magnetic tunnel junction (MTJ), comprising:
(a) a reference layer that forms a first interface with a surface of the tunnel barrier layer, and that forms a second interface with an adjoining interface oxide layer in a hybrid oxide capping layer structure;
(b) a tunnel barrier layer formed between the reference layer and a free layer;
(c) the free layer that contacts a tunnel barrier surface opposite the first interface; and
(d) the hybrid oxide capping layer structure comprised of:
(1) the adjoining interface oxide layer which is made of a first metal or first alloy;
(2) a first transition metal oxide layer formed from a second metal or second alloy that has an absolute value of free energy of oxide formation less than that of the first metal or first alloy; and
(3) a second transition metal oxide layer formed from a third metal or third alloy that has an absolute value of free energy of oxide formation less than that of the first metal or first alloy.
2. The MTJ of claim 1 wherein the MTJ has a bottom spin valve configuration wherein a seed layer, the hybrid oxide capping layer, the reference layer, the tunnel barrier layer, and the free layer are sequentially formed on a substrate, and each of the free layer and reference layer exhibit perpendicular magnetic anisotropy.
3. The MTJ of claim 1 wherein the adjoining interface oxide capping layer is comprised of one or more of MgTaOx, SrTiOx, BaTiOx, CaTiOx, LaAlOx, MgO, TaOx, MnOx, VOx, and BOx.
4. The MTJ of claim 1 wherein each of the first transition metal oxide layer and second transition metal oxide layer is comprised of RuOx, PtOx, RhOx, MoOx, WOx, SnOx, or InSnOx.
5. The MTJ of claim 1 wherein the free layer is comprised of one or more of CoFeB, CoFe, Co, Fe, CoB, FeB, and CoFeNiB.
6. The MTJ of claim 1 wherein the hybrid oxide capping layer has a resistance×area (RA) value that is reduced by decreasing a thickness of the hybrid oxide capping layer or reducing an oxidation state in one or more of the adjoining interface oxide layer, first transition metal oxide layer, and second transition metal oxide layer.
7. The MTJ of claim 1 wherein one or more of the adjoining interface oxide layer, first transition metal oxide layer, and second transition metal oxide layer comprise less than a stoichiometric amount of oxygen such that there is unoxidized metal or unoxidized alloy remaining in the hybrid oxide capping layer.
8. The MTJ of claim 1 wherein the hybrid oxide capping layer is doped with one or more of Fe, Co, Ni, Ru, Cr, Au, Ag, and Cu to increase conductivity therein.