MTJ etching with improved uniformity and profile by adding passivation step
View Patent ↗A hard mask stack for etching a magnetic tunneling junction (MTJ) structure is described. An electrode layer is deposited on a stack of MTJ layers on a bottom electrode. A photoresist mask is formed on the electrode layer. The electrode layer is etched away where it is not covered by the photoresist mask to form a metal hard mask. The metal hard mask is passivated during or after etching to form a smooth hard mask profile. Thereafter, the photoresist mask is removed and the MTJ structure is etched using the metal hard mask wherein the metal hard mask remaining acts as a top electrode. The resulting MTJ device has smooth sidewalls and uniform device shape.
1. A method for etching a magnetic tunneling junction (MTJ) structure comprising: providing a stack of MTJ layers on a bottom electrode; depositing a metal electrode layer on said stack of MTJ layers; forming a photoresist mask on said metal electrode layer; etching away said metal electrode layer where it is not covered by said photoresist mask to form a metal hard mask; passivating said metal hard mask by purging O2, H2O vapor, or air into the etching chamber or by low power O2 plasma treatment or by exposing said metal hard mask to ambient air or by water rinse during or after said etching away of said electrode layer wherein after said passivating, said metal hard mask has smooth sidewalls; thereafter removing said photoresist mask; and etching said MTJ stack using passivated said metal hard mask, after said passivating said metal hard mask and removing said photoresist mask, wherein said metal hard mask remaining acts as a top electrode.
2. The method according to claim 1 wherein said metal electrode layer comprises Ta, TaN, Ti, TiN, or W having a thickness of between about 380 and 1000 Angstroms.
3. The method according to claim 1 wherein said photoresist mask has a thickness of between about 1000 and 4700 Angstroms.
4. The method according to claim 1 wherein said metal hard mask layer is etched using Fluorine or Chlorine based chemicals.
5. The method according to claim 1 wherein said step of passivating said metal hard mask is performed by partially etching away said metal electrode layer not covered by said photoresist mask, exposing said metal electrode layer to ambient air, or water rinsing the wafer, or purging O 2 , H 2 O vapor or air into the etching chamber, and etching away said metal electrode layer some more wherein said steps of etching away said metal electrode layer and exposing said metal electrode layer to ambient air, or water rinsing the wafer, purging O 2 , H 2 O vapor or air into the etching chamber are repeated as necessary until said hard mask layer is completely formed and passivated.
6. The method according to claim 1 wherein said MTJ stack is etched using reactive ion etching or ion beam etching.
7. The method according to claim 1 wherein said top electrode has a thickness of at least 38 nm.
8. A method for etching a magnetic tunneling junction (MTJ) structure comprising: providing a stack of MTJ layers on a bottom electrode; depositing an electrode layer on said stack of MTJ layers wherein said electrode layer is composed of Ta, TaN, Ti, TiN, or W; forming a photoresist mask on said electrode layer; etching away said electrode layer where it is not covered by said photoresist mask to form a metal hard mask; passivating said metal hard mask by purging O2 or H2O vapor or ambient air into the etching chamber, or by O2 plasma treatment wherein after said passivating, said metal hard mask has smooth sidewalls; thereafter removing said photoresist mask; and etching said MTJ stack using passivated said metal hard mask, after said passivating said metal hard mask and removing said photoresist mask, wherein said metal hard mask remaining acts as a top electrode.
9. The method according to claim 8 wherein said electrode layer has a thickness of between about 380 and 1000 Angstroms.
10. The method according to claim 8 wherein said photoresist mask has a thickness of between about 1000 and 4700 Angstroms.
11. The method according to claim 8 wherein said metal hard mask layer is etched using Fluorine or Chlorine based chemicals.
12. The method according to claim 8 wherein said purging O 2 or H 2 O vapor or ambient air into the etching chamber is performed after said etching away of said electrode layer.
13. The method according to claim 8 wherein said purging O 2 or H 2 O vapor or ambient air into the etching chamber is performed during said etching away of said electrode layer.
14. The method according to claim 8 wherein said purging O 2 or H 2 O vapor or ambient air into said etching chamber is performed after said etching away or partially etching away of said electrode layer.
15. The method according to claim 8 wherein said MTJ stack is etched using reactive ion etching or ion beam etching.
16. The method according to claim 8 wherein said top electrode has a thickness of at least 38 nm.
17. A method for etching a magnetic tunneling junction (MTJ) structure comprising: providing a stack of MTJ layers on a bottom electrode; depositing a metal electrode layer on said stack of MTJ layers; forming a photoresist mask on said metal electrode layer; partially etching away said metal electrode layer where it is not covered by said photoresist mask; exposing said metal electrode layer to ambient air, or water rinsing the wafer, or purging O2, H2O vapor or air into the etching chamber, and etching away said metal electrode layer some more wherein said steps of etching away said metal electrode layer and exposing said metal electrode layer to ambient air, or water rinsing the wafer, purging O2, H2O vapor or air into the etching chamber are repeated as necessary to form a metal hard mask layer and to passivate said metal hard mask wherein after passivating, said metal hard mask has smooth sidewalls; thereafter removing said photoresist mask; and etching said MTJ stack using passivated said metal hard mask, after said passivating said metal hard mask and removing said photoresist mask, wherein said metal hard mask remaining acts as a top electrode.