Method to minimize MTJ sidewall damage and bottom electrode redeposition using IBE trimming
View Patent ↗An improved method for etching a magnetic tunneling junction (MTJ) structure is achieved. A stack of MTJ layers is provided on a bottom electrode. The MTJ stack is patterned to form a MTJ device wherein sidewall damage or sidewall redeposition is formed on sidewalls of the MTJ device. A dielectric layer is deposited on the MTJ device and the bottom electrode. The dielectric layer is etched away using ion beam etching at an angle relative to vertical of greater than 50 degrees wherein the dielectric layer on the sidewalls is etched away and wherein sidewall damage or sidewall redeposition is also removed and wherein some of the dielectric layer remains on horizontal surfaces of the bottom electrode.
1. A method for etching a magnetic tunneling junction (MTJ) structure comprising:
providing a stack of MTJ layers on a bottom electrode;
patterning said MTJ stack to form a MTJ device wherein sidewall damage or sidewall redeposition is formed on sidewalls of said MTJ device;
thereafter depositing a dielectric layer on said MTJ device and said bottom electrode; and
etching away said dielectric layer using ion beam etching at an angle relative to vertical of greater than 50 degrees wherein said dielectric layer on said sidewalls is etched away and wherein said sidewall damage or sidewall redeposition is also removed and wherein some of said dielectric layer remains on horizontal surfaces of said bottom electrode.
2. The method according to claim 1 wherein said MTJ stack is patterned using a reactive ion etch resulting in said sidewall damage to said MTJ device.
3. The method according to claim 1 wherein said MTJ stack is patterned using an ion beam etch resulting in said sidewall redeposition of said bottom electrode material to sidewalls of said MTJ device.
4. The method according to claim 1 wherein said dielectric layer comprises silicon dioxide or silicon nitride having a thickness of between about 50 and 400 Angstroms.
5. The method according to claim 1 wherein said angle is between about 50 and 80 degrees.
6. The method according to claim 1 wherein said steps of depositing said dielectric angle and said ion beam etching are repeated until all of said sidewall damage or said sidewall redeposition is removed.
7. A method for etching a magnetic tunneling junction (MTJ) structure comprising:
providing a stack of MTJ layers on a bottom electrode;
patterning said MTJ stack using a reactive ion etch to form a MTJ device wherein sidewall damage is formed on sidewalls of said MTJ device;
thereafter depositing a dielectric layer on said MTJ device and said bottom electrode; and
etching away said dielectric layer using ion beam etching at an angle relative to vertical of greater than 50 degrees wherein said dielectric layer on said sidewalls is etched away and wherein said sidewall damage is also removed and wherein some of said dielectric layer remains on horizontal surfaces of said bottom electrode.
8. The method according to claim 7 wherein said dielectric layer comprises silicon dioxide or silicon nitride having a thickness of between about 50 and 400 Angstroms.
9. The method according to claim 7 wherein said angle is between about 50 and 80 degrees.
10. The method according to claim 7 wherein said steps of depositing said dielectric angle and said ion beam etching are repeated until all of said sidewall damage is removed.
11. A method for etching a magnetic tunneling junction (MTJ) structure comprising:
providing a stack of MTJ layers on a bottom electrode;
patterning said MTJ stack using ion beam etching to form a MTJ device wherein sidewall redeposition of said bottom electrode material is formed on sidewalls of said MTJ device;
thereafter depositing a dielectric layer on said MTJ device and said bottom electrode; and
etching away said dielectric layer using ion beam etching at an angle relative to vertical of greater than 50 degrees wherein said dielectric layer on said sidewalls is etched away and wherein said sidewall redeposition is also removed and wherein some of said dielectric layer remains on horizontal surfaces of said bottom electrode.
12. The method according to claim 11 wherein said dielectric layer comprises silicon dioxide or silicon nitride having a thickness of between about 50 and 400 Angstroms.
13. The method according to claim 11 wherein said angle is between about 50 and 80 degrees.
14. The method according to claim 11 wherein said steps of depositing said dielectric angle and said ion beam etching are repeated until all of said sidewall redeposition is removed.