Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications
A magnetic tunnel junction is disclosed wherein the reference layer and free layer each comprise one layer having a boron content from 25 to 50 atomic %, and an adjoining second layer with a boron content from 1 to 20 atomic %. One of the first and second layers in each of the free layer and reference layer contacts the tunnel barrier. Each boron containing layer has a thickness of 1 to 10 Angstroms and may include one or more B layers and one or more Co, Fe, CoFe, or CoFeB layers. As a result, migration of non-magnetic metals along crystalline boundaries to the tunnel barrier is prevented, and the MTJ has a low defect count of around 10 ppm while maintaining an acceptable TMR ratio following annealing to temperatures of about 400° C. The boron containing layers are selected from CoB, FeB, CoFeB and alloys thereof including CoFeNiB.
1. A magnetic tunnel junction (MTJ) element in a magnetic device, comprising:
(a) a reference layer with an AP2/NM1/AP1 configuration wherein AP2 is a first magnetic layer, AP1 is a second magnetic layer that adjoins a tunnel barrier along a first surface, and NM1 is a first non-magnetic layer that enables anti-ferromagnetic coupling between AP1 and AP2, or provides a moment diluting effect in the reference layer, the AP1 layer is comprised of a first layer with a boron content between 1 and 20 atomic %, a second layer with a boron content between 25 and 50 atomic % that contacts the first surface of the tunnel barrier, and a third layer having ferromagnetic properties located between the first layer and the NM1 layer;
(b) the tunnel barrier;
(c) a free magnetic layer stack comprised of a first free magnetic layer with a boron content between 25 and 50 atomic %, and a second free magnetic layer with a low boron content between 1 and 20 atomic %, the first free magnetic layer forms an interface with the second free magnetic layer, and the second free magnetic layer contacts a surface of the tunnel barrier that is opposite to the first surface; and
a metal oxide capping layer disposed directly on the free magnetic layer stack.
2. The MTJ element of claim 1 wherein each of the first and second layers in the AP1 layer, and the first and second free magnetic layers have a composition that is selected from CoB, FeB, CoFeB, CoFeNiB, or CoFeBQ wherein Q is one of Zr, Hf, Nb, Ta, Mo, and W.
3. The MTJ element of claim 1 wherein each of the first and second layers in the AP1 layer has a thickness from about 1 to 10 Angstroms.
4. The MTJ element of claim 1 wherein each of the first free magnetic layer and second free magnetic layer has a thickness from about 1 to 10 Angstroms.
5. The MTJ element of claim 2 wherein one or both of the first and second layers in the AP1 layer are comprised of a bilayer configuration wherein one layer is Co, Fe, CoFe, CoFeNi, CoFeB, or CoFeQ, and a second layer is B.
6. The MTJ element of claim 2 wherein one or both of the first and second layers in the AP1 layer have a multilayer configuration comprised of one or more layers of B, and one or more layers selected from Co, Fe, CoFe, CoFeNi, CoFeB, and CoFeQ.
7. The MTJ element of claim 2 wherein one or both of the first and second free magnetic layers are comprised of a bilayer configuration wherein a first layer is Co, Fe, CoFe, CoFeNi, CoFeB, or CoFeQ, and a second layer is B.
8. The MTJ element of claim 2 wherein one or both of the first and second free magnetic layers have a multilayer configuration comprised of one or more layers of B, and one or more layers selected from Co, Fe, CoFe, CoFeNi, CoFeB, and CoFeQ.
9. The MTJ element of claim 1 wherein the tunnel barrier is an oxide, oxynitride, or nitride of Mg, Ti, AlTi, MgZn, Al, Zn, Zr, Ta, or Hf, or is a native oxide of CoFeB, CoB, or FeB, or is a laminated stack of one or more of the aforementioned materials.
10. The MTJ element of claim 1 wherein NM1 is one of Ru, Rh, and Ir to give a synthetic anti-parallel (SyAP) configuration for the reference layer.
11. The MTJ element of claim 1 wherein the free magnetic layer stack has a FL1/FL2/NM2/FL3 configuration wherein FL1 is one of the first or second free magnetic layers, FL2 is the other of the first or second free magnetic layers, FL3 is a third free magnetic layer, and NM2 is a second non-magnetic layer that enables anti-ferromagnetic coupling between FL2 and FL3, or provides a moment diluting effect in the free magnetic layer stack.
12. The MTJ element of claim 1 wherein the magnetic device is a magnetoresistive random access memory (MRAM), spin-torque MRAM, embedded MRAM, or a spintronic device, or is a sensor in a read head.
13. A magnetic tunnel junction (MTJ) element in a magnetic device, comprising:
a reference layer with an AP2/NM1/AP1 configuration wherein AP2 is a first magnetic layer, AP1 is a second magnetic layer that adjoins a tunnel barrier along a first surface, and NM1 is a first non-magnetic layer that enables anti-ferromagnetic coupling between AP1 and AP2, or provides a moment diluting effect in the reference layer, the AP1 layer is comprised of a first layer with a boron content between 1 and 20 atomic %, and a second layer with a boron content between 25 and 50 atomic % that contacts the first surface of the tunnel barrier, wherein the first and second layers of the AP1 layer each have a magnetic moment in a first direction, wherein the AP2 layer has a magnetic moment in a second direction opposite the first direction, wherein one or both of the first and second layers in the AP1 layer is a multilayer that includes one or more layers consisting of B, and one or more layers selected from Co, Fe, CoFe, CoFeNi, CoFeB, and CoFeQ wherein Q is one of Zr, Hf, Nb, Ta, Mo, and W;
the tunnel barrier; and
a free magnetic layer stack comprised of a first free magnetic layer with a boron content between 25 and 50 atomic %, and a second free magnetic layer with a low boron content between 1 and 20 atomic %, the first free magnetic layer forms an interface with the second free magnetic layer, and the second free magnetic layer contacts a surface of the tunnel barrier that is opposite to the first surface, wherein the free magnetic stack further includes:
a third free magnetic layer disposed over both the first and second free magnetic layers; and
a second non-magnetic (NM2) layer disposed between the third free magnetic layer and the first and second free magnetic layers.
14. The MTJ element of claim 13 , wherein third free magnetic layer is formed of a material selected from the group consisting of Co and CoFe.
15. The MTJ element of claim 13 , further comprising a metal oxide capping layer physically contacting the third free magnetic layer.
16. The MTJ element of claim 13 , wherein the tunnel barrier includes a nitride material.
17. A magnetic tunnel junction (MTJ) element in a magnetic device, comprising:
(a) a reference layer with an AP2/NM1/AP1 configuration wherein AP2 is a first magnetic layer, AP1 is a second magnetic layer that adjoins a tunnel barrier along a first surface, and NM1 is a first non-magnetic layer that enables anti-ferromagnetic coupling between AP1 and AP2, or provides a moment diluting effect in the reference layer, the AP1 layer is comprised of a first layer with a boron content between 1 and 20 atomic %, and a second layer with a boron content between 25 and 50 atomic % that contacts the first surface of the tunnel barrier, wherein the first and second layers of the AP1 layer each have a magnetic moment in a first direction, wherein the AP2 layer has a magnetic moment in a second direction opposite the first direction, wherein the first and second directions intersect each other;
(b) the tunnel barrier;
(c) a free magnetic layer stack comprised of a first free magnetic layer with a boron content between 25 and 50 atomic %, and a second free magnetic layer with a low boron content between 1 and 20 atomic %, the first free magnetic layer forms an interface with the second free magnetic layer, and the second free magnetic layer contacts a surface of the tunnel barrier that is opposite to the first surface; and
a metal oxide capping layer disposed directly on the free magnetic layer stack.