Free layer/capping layer for high performance MRAM MTJ
View Patent ↗An MTJ MRAM cell and its method of formation are described. The cell includes a composite free layer having the general form (Ni 88 Fe 12 ) 1-x Co 100x —Ni 92 Fe 8 with x between 0.05 and 0.1 that provides low magnetization and negative magnetostriction. The magnetostriction can be tuned to a low value by a multilayer capping layer that includes a positive magnetostriction layer of NiFeHf(15%). When this cell forms an MRAM array, it contributes to a TMR≧26%, a TMR/R p — cov≧15.5 and a high AQF (array quality factor) for write operations.
1. An MTJ MRAM cell element comprising:
a seed layer;
a pinning layer formed on said seed layer;
a pinned layer formed on said pinning layer;
a tunneling barrier layer formed on said pinned layer;
a composite free layer formed on said tunneling barrier layer, said free layer being formed as a multilayer of materials having low magnetization and having negative magnetostriction; and whereby the magnetostriction of said cell can be tuned to a low value by a multilayered capping layer having positive magnetostriction; and
said multilayered capping layer formed on said free layer.
2. The cell element of claim 1 wherein said composite free layer includes a first layer of the compositional form (Ni 88 Fe 12 ) 1-x Co 100x where x is between approximately 0.05 and 0.1.
3. The cell element of claim 2 wherein said first layer is formed to a thickness between approximately 8 angstroms and 14 angstroms.
4. The cell element of claim 2 wherein said composite free layer has a negative magnetostriction.
5. The cell element of claim 2 wherein a second layer of Ni 92 Fe 8 is formed on said first layer.
6. The cell element of claim 5 wherein said second layer of Ni 92 Fe 8 is formed to a thickness of between approximately 14 and 16 angstroms.
7. The cell element of claim 6 , whereby said composite free layer has a negative magnetostriction.
8. The cell element of claim 1 wherein said composite free layer is a layer of Ni 84 Fe 11 Co 5 (t 1 )-Ni 92 Fe 8 (t 2 ), wherein t 1 is a thickness between approximately 10 angstroms and 14 angstroms and t 2 is a thickness between approximately 14 angstroms and 16 angstroms.
9. The cell element of claim 1 wherein said composite free layer is a layer of Ni 79 Fe 11 Co 10 (t 1 )-Ni 92 Fe 8 (t 2 ), wherein t 1 is a thickness between approximately 8 angstroms and 12 angstroms and t 2 is a thickness between approximately 14 angstroms and 16 angstroms.
10. The cell element of claim 1 wherein said multi-layered capping layer includes a positive magnetostriction layer of NiFeHf(15%), with 15% of Hf atoms, formed contacting said composite free layer.
11. The cell element of claim 10 wherein said positive magnetostriction layer of NiFeHf(15%) is formed to a thickness between approximately 40 and 60 angstroms.
12. The cell element of claim 11 wherein said cell element has a TMR ratio that is greater than or equal to 50%.
13. The cell element of claim 10 wherein said multi-layered capping layer includes a layer of Ta formed contacting said positive magnetostriction layer of NiFeHf(15%) and a layer of Ru contacting said layer of Ta and wherein said layer of Ta is approximately 30 angstroms in thickness and said layer of Ru is approximately 100 angstroms in thickness.
14. The cell element of claim 1 wherein said pinned layer is a synthetic antiferromagnetic layer comprising an inner and outer ferromagnetic layer coupled by a layer of Ru in a configuration of antiparallel magnetic moments and wherein said outer layer is a layer of CoFe and said inner layer is a composite layer of CoFeB and CoFe.
15. The cell element of claim 1 wherein said tunneling barrier layer is a layer of Al of approximate thickness 7.75 angstroms that has been oxidized by a process of radical oxidation to form a layer of AlOx.
16. The cell element of claim 1 further including a cross-sectional patterning in a C-shape and having dimensions of approximately 0.2×0.4 microns.
17. A method of forming an MTJ MRAM cell element comprising:
providing a substrate;
forming a seed layer on the substrate;
forming a pinning layer on said seed layer;
forming a pinned layer on said pinning layer;
forming a tunneling barrier layer on said pinned layer;
forming on said tunneling barrier layer a composite free layer as a multi-layer of materials having low magnetization and having negative magnetostriction, whereby the magnetostriction of said cell can be tuned to a low value by the formation of a multilayered capping layer thereon;
forming said multi-layered capping layer on said free layer; then
annealing said formation in a 10 kOe magnetic field, at approximately 265° C. for approximately 5 hours.
18. The method of claim 17 wherein the formation of said composite free layer comprises forming on said tunneling barrier layer a first layer of the compositional form (Ni 88 Fe 12 ) 1-x Co 100x where x is between approximately 0.05 and 0.1.
19. The method of claim 18 wherein said first layer is formed to a thickness between approximately 8 angstroms and 14 angstroms.
20. The method of claim 18 wherein a second layer, formed of Ni 92 Fe 8 , is formed on said first layer.
21. The method of claim 20 wherein said second layer of Ni 92 Fe 8 is formed to a thickness of between approximately 14 and 16 angstroms.
22. The method of claim 17 wherein said composite free layer is formed as a layer of Ni 84 Fe 11 Co 5 (t 1 ) on which is formed layer of Ni 92 Fe 8 (t 2 ), wherein t 1 is a thickness between approximately 10 angstroms and 14 angstroms and t 2 is a thickness between approximately 14 angstroms and 16 angstroms.
23. The method of claim 16 wherein said composite free layer is formed as a layer of Ni 79 Fe 11 Co 10 (t 1 ) on which is formed a layer of Ni 92 Fe 8 (t 2 ), wherein t 1 is a thickness between approximately 8 angstroms and 12 angstroms and t 2 is a thickness between approximately 14 angstroms and 16 angstroms.
24. The method of claim 16 wherein said multi-layered capping layer is formed by first forming, contacting said composite free layer, a positive magnetostriction layer of NiFeHf(15%), with 15% of Hf atoms.
25. The method of claim 24 wherein said positive magnetostriction layer of NiFeHf(15%) is formed to a thickness between approximately 40 and 60 angstroms.
26. The method of claim 24 wherein a layer of Ta is formed contacting said layer of NiFeHf(15%) and a layer of Ru is then formed contacting said layer of Ta and wherein said layer of Ta is approximately 30 angstroms in thickness and said layer of Ru is approximately 100 angstroms in thickness.
27. The method of claim 17 wherein said pinned layer is formed as a synthetic antiferromagnetic layer comprising an inner and outer ferromagnetic layer coupled by a layer of Ru to create a configuration of antiparallel magnetic moments subsequent to said annealing process and wherein said outer layer is a layer of CoFe and said inner layer is a composite layer of CoFeB and CoFe.
28. The method of claim 17 wherein said tunneling barrier layer is formed as a deposited layer of Al of approximate thickness 7.75 angstroms that is then oxidized by a process of radical oxidation to form a layer of AlOx.
29. The method of claim 17 further including a cross-sectional patterning in a C-shape and having dimensions of approximately 0.2×0.4 microns.