Patent Assignment
Reel/Frame 031956/0645
Assignment of Assignor's Interest
Recorded: 2014-01-09
Pages: 8
Assignor
MAGIC TECHNOLOGIES, INC.
Executed: 2013-12-19
Assignee
HEADWAY TECHNOLOGIES, INC.
678 SOUTH HILLVIEW DRIVE, MILPITAS, CALIFORNIA, 95035
Covered Properties
(99)
Mram Arrays with Reduced Bit Line Resistance and Method to Make the Same
Magnetic Random Access Memory Array with Free Layer Locking Mechanism
Novel Oxidation Structure/Method to Fabricate a High-Performance Magnetic Tunneling Junction Mram
Novel Structure/Method to Fabricate a High-Performance Magnetic Tunneling Junction Mram
A Method of Forming a Magnetic Tunneling Junction (Mtj) Mram Device and a Tunneling Magnetoresistive (Tmr) Read Head
Method and System for Optimizing the Number of Word Line Segments in a Segmented Mram Array
Novel Capping Structure for Enhancing Dr/R of the Mtj Device
Magnetic Random Access Memory Array with Coupled Soft Adjacent Magnetic Layer
Novel Underlayer for High Performance Magnetic Tunneling Junction Mram
Adaptive Algorithm for Mram Manufacturing
Magnetic Random Access Memory Array with Thin Conduction Electrical Read and Write Lines
Magnetic Random Access Memory Array with Proximate Read and Write Lines Cladded with Magnetic Material
Magnetic Random Access Memory Array with Thin Conduction Electrical Read and Write Lines
Novel Structure and Method to Fabricate High Performance Mtj Devices for Mram Applications
Novel Structure and Method to Fabricate High Performance Mtj Devices for Mram Applications
Highly Efficient Segmented Word Line Mram Array
World Line Segment Select Transistor on Word Line Current Source Side
Mtj Read Head with Sidewall Spacers
Method of Forming Super-Paramagnetic Cladding Material on Conductive Lines of Mram Devices
Process for Manufacturing Segmented Mram Array with Patterned Segmented Magnetic Shields
Mram with Super-Paramagnetic Sensing Layer
Bottom Conductor for Integrated Mram
Method of Fabricating Contact Pad for Magnetic Random Access Memory
Patent:
7,122,386 →
Application:
11/231,674 →
Thermally Assisted Integrated Mram Design and Process for Its Manufacture
Reference Cell Scheme for Mram
Spacer Structure in Mram Cell and Method of Its Fabrication
Configurable Mram and Method of Configuration
Mgo/Nife Mtj for High Performance Mram Application
Mram with Split Read-Write Cell Structures
Novel Programming Scheme for Segmented Word Line Mram Array
Magnetic Random Access Memory with Selective Toggle Memory Cells
Synthetic Anti-Ferromagnetic Structure with Non-Magnetic Spacer for Mram Applications
Multi-State Thermally Assisted Storage
Magnetic Tunnel Junction Patterning Using Ta/Tan as Hard Mask
Novel Method to Form a Nonmagnetic Cap for the Nife(Free) Mtj Stack to Enhance Dr/R
Planar Flux Concentrator for Mram Devices
Novel Capping Layer for a Magnetic Tunnel Junction Device to Enhance Dr/R and a Method of Making the Same
Gmr Biosensor with Enhanced Sensitivity
Bottom Electrode for Mram Device and Method to Fabricate It
Hafnium Doped Cap and Free Layer for Mram Device
Spin Transfer Mram Device with Magnetic Biasing
Novel Magnetic Tunnel Junction (Mtj) to Reduce Spin Transfer Magnetization Switching Current
Novel Syaf Structure to Fabricate Mbit Mtj Mram
Spin Transfer Mram Device with Novel Magnetic Free Layer
Method of Magnetic Tunneling Junction Pattern Layout for Magnetic Random Access Memory
Spin Transfer Mram Device with Novel Magnetic Synthetic Free Layer
Mram with Enhanced Programming Margin
Mtj Sensor Including Domain Stable Free Layer
Spin-Torque Mram: Spin-Ram, Array
Magnetic Tunnel Junction (Mtj) Based Magnetic Field Angle Sensor
High Performance Mtj Element for Stt-Ram and Method for Making the Same
Magnetic Field Angle Sensor with Gmr or Mtj Elements
Patent:
7,394,247 →
Application:
11/881,349 →
Method and Structure to Reset Multi-Element Mtj
Patent:
7,394,248 →
Application:
11/888,854 →
Composite Hard Mask for the Etching of Nanometer Size Magnetic Multilayer Based Device
Method and Implementation of Stress Test for Mram
MRAM with means of controlling magnetic anisotropy
Method of Magnetic Tunneling Layer Processes for Spin-Transfer Torque Mram
High Performance Mtj Element for Conventional Mram and for Stt-Ram and a Method for Making the Same
Spin Transfer Mram Device with Separated Cpp Assisted Writing
Method of Mram Fabrication with Zero Electrical Shorting
Devices Using Addressable Magnetic Tunnel Junction Array to Detect Magnetic Particles
Use of Cmp to Contact a Mtj Structure Without Forming a Via
Low Switching Current Dual Spin Filter (Dsf) Element for Stt-Ram and a Method for Making the Same
Low Switching Current Mtj Element for Ultra-High Stt-Ram and a Method for Making the Same
Gear Tooth Sensor with Single Magnetoresistive Bridge
Mram with Cross-Tie Magnetization Configuration
Highly Sensitive Amr Bridge for Gear Tooth Sensor
Patent:
7,592,803 →
Application:
12/214,865 →
Gear Tooth Sensor (Gts) with Magnetoresistive Bridge
Mtj Based Magnetic Field Sensor with Esd Shunt Trace
Structure and Method to Fabricate High Performance Mtj Devices for Spin-Transfer Torque (Stt)-Ram
High Density Spin-Transfer Torque Mram Process
Gmr Biosensor with Aligned Magnetic Field
Bottom Electrode Mask Design for Ultra-Thin Interlayer Dielectric Approach in Mram Device Fabrication
Boosted Gate Voltage Programming for Spin-Torque Mram Array
Novel Spin Momentum Transfer Mram Design
Field Angle Sensor Fabricated Using Reactive Ion Etching
Patent:
7,713,755 →
Application:
12/316,501 →
Novel Free Layer/Capping Layer for High Performance Mram Mtj
Mram with Coupling Valve Switching
Method of Double Patterning and Etching Magnetic Tunnel Junction Structures for Spin-Transfer Torque Mram Devices
Single Bit Line Smt Mram Array Architecture and the Programming Method
Bio-Sensor with Hard-Direction Field
Bottom Electrode Etching Process in Mram Cell
Gate Drive Voltage Boost Schemes for Memory Array
Magnetic Memory Capable of Minimizing Gate Voltage Stress in Unselected Memory Cells
Mems Device Package with Vacuum Cavity by Two-Step Solder Reflow Method
Novel Bit Line Preparation Method in Mram Fabrication
Mtj Incorporating Cofe/Ni Multilayer Film with Perpendicular Magnetic Anisotropy for Mram Application
Method of High Density Field Induced Mram Process
Patent:
7,919,407 →
Application:
12/590,945 →
Read Disturb Free Smt Mram Reference Cell Circuit
Shared Bit Line Smt Mram Array with Shunting Transistors Between the Bit Lines
Method to Fabricate Thin Metal via Interconnects on Copper Wires in Mram Devices
Pulse Field Assisted Spin Momentum Transfer Mram Design
Fast and Accurate Current Driver with Zero Standby Current and Features for Boost and Temperature Compensation for Mram Write Circuit
Reference Cell Architectures for Small Memory Array Block Activation
Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions
Multilayers Having Reduced Perpendicular Demagnetizing Field Using Moment Dilution for Spintronic Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Magnetic Tunnel Junction for Mram Applications
Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
Related Assignments
(24)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 1, 2004
From: WANG, PO-KANG; HONG, LIUBO
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015179/0971 →
Assignment of Assignor's Interest
Apr 6, 2004
From: GUO, YIMIN; WANG, PO-KANG; SHI, XIZENG; MIN, TAI
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 015188/0184 →
Assignment of Assignor's Interest
Apr 8, 2004
From: HORNG, CHENG T.; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015196/0001 →
Assignment of Assignor's Interest
May 12, 2004
From: HORNG, CHENG T.; CHEN, MAO-MIN; HONG, LIUBO; TONG, RU-YING
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015326/0973 →
Assignment of Assignor's Interest
May 19, 2004
From: HORNG, CHENG T.; HONG, LIUBO; TONG, RU-YUNG; CHEN, YU-HSIA
To: HEADWAY TECHNOLOGIES, INC; APPLIED SPINTRONICS INC.
Reel/Frame 015358/0540 →
Assignment of Assignor's Interest
Jun 9, 2004
From: YANG, HSU KAI (KARL); SHI, XIZENG; WANG, PO-KANG; YANG, BRUCE YEE
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS TECHNOLOGY, INC.
Reel/Frame 015455/0347 →
Assignment of Assignor's Interest
Jun 15, 2004
From: HORNG, CHENG T.; TONG, RU-YING; HONG, LIUBO; LI, MIN
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015476/0100 →
Assignment of Assignor's Interest
Jun 21, 2004
From: GUO, YIMIN; MIN, TAI; WANG, POKAG; SHI, XI ZENG
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 015511/0406 →
Assignment of Assignor's Interest
Jun 30, 2004
From: HONG, LIUBO; HORNG, CHENG; CHEN, MAO-MIN; TONG, RU-YIN
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015542/0105 →
Assignment of Assignor's Interest
Jul 13, 2004
From: YANG, HSU KAI; SHI, XI ZENG; WANG, PO-KANG; YANG, BRUCE
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 015569/0807 →
Assignment of Assignor's Interest
Aug 3, 2004
From: MIN, TAI; GUO, YMIN; WANG, POKANG
To: HEADWAY TECHNOLOGIES, INC.
Reel/Frame 015660/0780 →
Assignment of Assignor's Interest
Dec 1, 2004
From: MIN, TAI; WANG, POKANG; SHI, XIZENG; GUO, YIMIN
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 016061/0453 →
Assignment of Assignor's Interest
Feb 2, 2005
From: HEADWAY TECHNOLOGIES, INC.
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPRINTRONICS, INC.
Reel/Frame 015646/0904 →
Assignment of Assignor's Interest
Feb 2, 2005
From: HEADWAY TECHNOLOGIES, INC.
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015646/0941 →
Assignment of Assignor's Interest
Feb 2, 2005
From: HEADWAY TECHNOLOGIES, INC.
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015648/0994 →
Assignment of Assignor's Interest
Feb 2, 2005
From: HEADWAY TECHNOLOGIES, INC.
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015646/0890 →
Assignment of Assignor's Interest
Feb 8, 2005
From: HEADWAY TECHNOLOGIES, INC.
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 015679/0842 →
Assignment of Assignor's Interest
Mar 15, 2005
From: HORNG, CHENG T.; TONG, RU-YING; CHEN, MAO-MIN; HONG, LIUBO
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 016390/0774 →
Assignment of Assignor's Interest
Mar 30, 2005
From: YANG, HSU KAI; WANG, PO-KANG; SHI, XIZENG
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 016441/0047 →
Assignment of Assignor's Interest
Apr 12, 2005
From: WANG, PO-KANG; RONG, YIN; YANG, HSU KAI; SHI, XIZENG
To: HEADWAY TECHNOLOGIES, INC.; APPLIED SPINTRONICS, INC.
Reel/Frame 016471/0937 →
Assignment of Assignor's Interest
May 27, 2010
From: APPLIED SPINTRONICS TECHNOLOGY, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 024445/0250 →
Assignment of Assignor's Interest
Jun 16, 2010
From: APPLIED SPINTRONICS, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 024539/0624 →
Assignment of Assignor's Interest
Sep 14, 2010
From: APPLIED SPINTRONICS TECHNOLOGY, INC.
To: MAGIC TECHNOLOGIES, INC.
Reel/Frame 024973/0723 →
Assignment of Assignor's Interest
Mar 25, 2019
From: HEADWAY TECHNOLOGIES, INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 048692/0917 →