MTJ device process/integration method with pre-patterned seed layer
A method for etching a magnetic tunneling junction (MTJ) structure is described. A bottom electrode layer is provided on a substrate. A seed layer is deposited on the bottom electrode layer. The seed layer and bottom electrode layer are patterned. A dielectric layer is deposited over the patterned seed layer and bottom electrode layer and planarized wherein the seed layer is exposed. Thereafter, a stack of MTJ layers is deposited on the patterned seed layer comprising a pinned layer, a tunnel barrier layer, and a free layer. The MTJ stack is then patterned to form a MTJ device. Because the seed layer was patterned before the MTJ patterning step, the exposure of the device to etching plasma gases is shortened and thus, etch damage is minimized.
1. A method for etching a magnetic tunneling junction (MTJ) structure comprising:
providing a bottom electrode layer on a top surface of a substrate;
depositing a seed layer on said bottom electrode layer;
patterning said seed layer and said bottom electrode layer;
depositing a dielectric layer over patterned said seed layer and bottom electrode layer and planarizing said dielectric layer wherein said seed layer is exposed;
thereafter depositing a stack of MTJ layers comprising a pinned layer, a tunnel barrier layer, and a free layer wherein said stack of MTJ layers lies directly on only said patterned seed layer and said dielectric layer surrounding said patterned seed layer wherein said seed layer promotes growth of large crystal grains in overlying said stack of MTJ layers; and
patterning said MTJ stack to form a MTJ device.
2. The method according to claim 1 wherein said seed layer is patterned to have a width equal to a width of said MTJ device.
3. The method according to claim 1 wherein said seed layer is patterned to have a width wider than a width of said MTJ device.
4. The method according to claim 1 wherein said seed layer is patterned to have a width narrower than a width of said MTJ device.
5. The method according to claim 1 wherein said seed layer is a first seed layer and further comprising:
depositing a second seed layer over patterned said first seed layer wherein a first thickness of said first seed layer is between about 60% and 80% of a second thickness of said first and second seed layers together; and
patterning said second seed layer as part of said MTJ stack.
6. The method according to claim 1 wherein said seed layer and said bottom electrode layer are patterned separately.
7. The method according to claim 1 wherein said seed layer and said bottom electrode layer are patterned together.
8. A method for etching a magnetic tunneling junction (MTJ) structure comprising:
providing a bottom electrode layer on a substrate;
depositing a seed layer on said bottom electrode layer;
patterning said seed layer and said bottom electrode layer;
depositing a dielectric layer over patterned said seed layer and bottom electrode layer and planarizing said dielectric layer wherein said seed layer is exposed;
thereafter depositing a stack of MTJ layers comprising a pinned layer, a tunnel barrier layer, and a free layer wherein said stack of MTJ layers lies directly on only said patterned seed layer and said dielectric layer surrounding said patterned seed layer wherein said seed layer promotes growth of large crystal grains in overlying said stack of MTJ layers; and
patterning said MTJ stack to form a MTJ device wherein said seed layer is patterned to have a width equal to or smaller than a width of said MTJ device.
9. The method according to claim 8 wherein said seed layer is a first seed layer and further comprising:
depositing a second seed layer over patterned said first seed layer wherein a first thickness of said first seed layer is between about 60% and 80% of a second thickness of said first and second seed layers together; and
patterning said second seed layer as part of said MTJ stack.
10. The method according to claim 8 wherein said seed layer and said bottom electrode layer are patterned separately.
11. The method according to claim 8 wherein said seed layer and said bottom electrode layer are patterned together.
12. A method for etching a magnetic tunneling junction (MTJ) structure comprising:
providing a bottom electrode layer on a substrate;
depositing a first seed layer on said bottom electrode layer;
patterning said first seed layer and said bottom electrode layer;
depositing a dielectric layer over patterned said first seed layer and bottom electrode layer and planarizing said dielectric layer wherein said first seed layer is exposed;
thereafter depositing a stack of MTJ layers comprising a second seed layer, a pinned layer, a tunnel barrier layer, and a free layer wherein said second seed layer lies directly on only said patterned first seed layer and said dielectric layer surrounding said patterned first seed layer wherein said first and second seed layers together promote growth of large crystal grains in overlying said stack of MTJ layers; and
patterning said MTJ stack to form a MTJ device.
13. The method according to claim 12 wherein said first seed layer is patterned to have a width equal to a width of said MTJ device.
14. The method according to claim 12 wherein said first seed layer is patterned to have a width wider than a width of said MTJ device.
15. The method according to claim 12 wherein said first seed layer is patterned to have a width narrower than a width of said MTJ device.
16. The method according to claim 12 wherein a first thickness of said first seed layer is between about 60% and 80% of a second thickness of said first and second seed layers together.
17. The method according to claim 12 wherein said first seed layer and said bottom electrode layer are patterned separately.
18. The method according to claim 12 wherein said first seed layer and said bottom electrode layer are patterned together.