Sloped structure, method for manufacturing sloped structure, and spectrum sensor

1. A method for manufacturing a sloped structure, the method comprising the steps of:

(a) forming a sacrificial film above a substrate;

(b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion;

(c) removing the sacrificial film; and

(d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.

2. A method for manufacturing a sloped structure according to claim 1 , further comprising the step (e), between the step (a) and the step (b), of patterning the sacrificial film to expose a side surface of the sacrificial film on which the third portion of the first film is formed.

3. A method for manufacturing a sloped structure according to claim 2 , wherein the step (b) includes forming an overhang at the boundary section between the second portion and the third portion while depositing the first film, thereby forming the thin region in an area among the third portion below the overhang.

4. A method for manufacturing a sloped structure according to claim 3 , wherein the step (e) includes exposing the side surface of the sacrificial film such that an upper portion of the side surface of the sacrificial film has a protruded shape.

5. A method for manufacturing a sloped structure according to claim 4 , wherein the sacrificial film formed by the step (a) includes a first layer and a second layer located above the first layer, and the step (e) includes exposing the side surface of the sacrificial film by using etching liquid or etching gas that causes an etching rate of the first layer greater than an etching rate of the second layer.

6. A method for manufacturing a sloped structure according to claim 1 , wherein the step (b) includes forming the first film by a plasma CVD method, thereby forming the thin region in the boundary section between the second portion and the third portion.

7. A method for manufacturing a sloped structure according to claim 1 , wherein the step (d) further includes supplying liquid between the first film and the substrate, and then removing the liquid.

8. A method for manufacturing a sloped structure according to claim 1 , further comprising the step (f), after the step (d), of filling material for a second film between the first film and the substrate.

9. A method for manufacturing a sloped structure according to claim 8 , further comprising the step (g), after the step (f), of removing the first film.