Pressurizing-type lamp annealing device, method for producing thin film, and method for using pressurizing-type lamp annealing device

1. A method for producing a thin film comprising the steps of:

preparing a substrate to be treated having an organic metal material on a surface thereof;

performing annealing treatment on said organic metal material in a reduced-pressure atmosphere through the use of a pressurizing-type lamp annealing device; and

performing oxidation treatment on said organic metal material in a pressurized oxygen atmosphere through the use of the pressurizing-type lamp annealing device,

the pressurizing-type lamp annealing device comprising:

a treatment chamber;

a holding part disposed into said treatment chamber to hold a substrate to be treated;

a gas-introduction mechanism for introducing a pressurized oxygen gas into said treatment chamber;

a gas-discharge mechanism for discharging the gas in said treatment chamber;

a transparent tube disposed into said treatment chamber; and

a lamp heater placed in said transparent tube to irradiate said substrate to be treated with a lamp light, through said transparent tube,

wherein said transparent tube has a thickness that is sufficient to withstand 9.9 atm.

2. The method for producing a thin film according to claim 1 , wherein

said oxidation treatment is a treatment in which:

said gas-introduction mechanism sets the inside of said chamber to a pressurized atmosphere; and

said lamp heater irradiates said organic metal material with said lamp light, through said transparent tube.

3. The method for producing a thin film according to claim 1 , wherein:

a annealing treatment is performed in which,

said gas-discharge mechanism sets the inside of said chamber to a reduced-pressure atmosphere; and

said lamp heater irradiates said organic metal material with said lamp light, through said transparent tube.

4. The method for producing a thin film according to claim 1 , wherein:

an atmospheric pressure oxidation treatment is performed in which,

between said annealing treatment and said oxidation treatment, the inside of said chamber is set to an atmospheric pressure atmosphere; and

said lamp heater irradiates said organic metal material with said lamp light, through said transparent tube.

5. A method for producing a thin film comprising the steps of:

preparing a substrate to be treated having an organic metal material on a surface thereof; and

performing annealing treatment on said organic metal material in a reduced-pressure atmosphere through the use of a pressurizing-type lamp annealing device; and

performing oxidation treatment on said organic metal material in a pressurized oxygen atmosphere through the use of the pressurizing-type lamp annealing device,

the pressurizing-type lamp annealing device comprising:

a chamber;

a holding part disposed into said chamber to hold a substrate to be treated positioned at a lower part of said chamber;

a gas-introduction mechanism for introducing a pressurized oxygen gas into said chamber;

a gas-discharge mechanism for discharging the gas in said chamber;

a transparent tube disposed into said chamber; and

a lamp heater placed in said transparent tube,

wherein:

a groove is formed on an upper inner wall of said chamber, the inner wall of said groove has a curved face along the outer surface of said transparent tube;

said transparent tube is disposed into said groove in a state where the outer surface thereof contacts said curved face;

said transparent tube has a thickness that is sufficient to withstand 9.9 atm,

each end of said transparent tube is connected to outside of said chamber; and

said substrate to be treated held by said holding part is irradiated with a lamp light of said lamp heater, through said transparent tube.

6. The method for producing a thin film according to claim 1 , wherein:

an inner wall of said treatment chamber has a curved face along an outer surface of said transparent tube; and

said transparent tube is disposed so that the outer surface thereof contacts said curved face.

7. The method for producing a thin film according to claim 1 , wherein each end of said transparent tube is connected to an outside of said treatment chamber.

8. The method for producing a thin film according to claim 5 , wherein:

an atmospheric pressure oxidation treatment is performed in which, between said annealing treatment and said oxidation treatment, the inside of said chamber is set to an atmospheric pressure atmosphere; and

said lamp heater irradiates said organic metal material with said lamp light, through said transparent tube.

9. The method for producing a thin film according to claim 1 , wherein said organic metal material is a PZT (lead zirconate titanate) material.

10. The method for producing a thin film according to claim 5 , wherein said organic metal material is a PZT (lead zirconate titanate) material.

11. A method for producing a thin film comprising the steps of:

preparing a substrate to be treated having an organic metal material on a surface thereof;

performing annealing treatment on said organic metal material in a reduced-pressure atmosphere through the use of a pressurizing-type lamp annealing device, wherein the reduced pressure atmosphere is a vacuum state; and

performing oxidation treatment on said organic metal material in a pressurized oxygen atmosphere through the use of the pressurizing-type lamp annealing device,

the pressurizing-type lamp annealing device comprising:

a treatment chamber;

a holding part disposed into said treatment chamber to hold a substrate to be treated;

a gas-introduction mechanism for introducing a pressurized oxygen gas into said treatment chamber;

a gas-discharge mechanism for discharging the gas in said treatment chamber;

a transparent tube disposed into said treatment chamber; and

a lamp heater placed in said transparent tube to irradiate said substrate to be treated with a lamp light, through said transparent tube,

wherein said transparent tube has a thickness that is sufficient to withstand 9.9 atm.