Shield member and apparatus for growing single crystal equipped with the same

1. A shield member placed between a raw material storage part and a substrate supporting part in an apparatus for growing a single crystal, the apparatus comprising: a vessel for growing the single crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; and a heating apparatus positioned at an outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate, wherein a plurality of permeation holes through which the raw material gas passes is formed,

wherein the shield member consists of a plurality of ring members, individual ones of the ring members having an opening with a different inner diameter and a different specific heat capacity, and the shield member is configured such that the heat capacity thereof increases from the center toward the outer periphery by arranging the ring members with a larger specific heat capacity closer to the outer periphery.

2. The shield member as set forth in claim 1 , wherein the shield member is configured so as to increase the thickness thereof as displacing from the center to the outer periphery, such that the heat capacity thereof increases as displacing from the center to the outer periphery.

3. The shield member as set forth in claim 2 , wherein a ratio of the maximum thickness (d max ) and the minimum thickness (d min ) of the shield member (d max /d min ) ranges from 3 to 50.

4. The shield member as set forth in claim 1 . wherein the surface of the shield member on the side of the substrate supporting part is flat.

5. The shield member as set forth in claim 1 , wherein the shield member has an opening ratio of center side (total area of the opening of the permeation hole/total area of the portion other than the permeation hole) which is larger than an opening ratio of peripheral edge side.

6. The shield member as set forth in claim 1 wherein each of the plurality of ring members having a different thickness and a different opening inner diameter is arranged such that thicker trig member is placed sequentially as displacing from the center to the outer periphery, so as not to overlap with each other in plan view.

7. The shield member as set forth in claim 1 , wherein the shield member consists of plurality of ring members having the same thickness and a different opening inner diameter arranged to overlap each other, such that the number of ring member which is overlapping increases as displacing from the center to the outer periphery.

8. The shield member as set forth in claim 1 , wherein the shield member is made of carbon material.

9. The shield member as set forth in claim 1 , wherein the shield member is made of a porous material.

10. An apparatus for growing a single crystal, comprising: a vessel for growing a crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; a shield member provided between the raw material storage part and the substrate supporting part; and a heating apparatus positioned at outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate,

wherein the shield member consists of a plurality of ring members, individual ones of the ring members having an opening with a different inner diameter and a different specific heat capacity, and the shield member is configured such that the heat capacity thereof increases from the center toward the outer periphery by arranging the ring members with a larger specific heat capacity closer to the outer periphery, and

the outer periphery of the shield member is supported by the inner wall of the vessel for growing crystal.

11. An apparatus for growing a single crystal, comprising: a vessel for growing a crystal; a raw material storage part positioned at a lower portion of the vessel for growing the single crystal; a substrate supporting part, positioned above the raw material storage part so as to be opposed to the raw material storage part to support the substrate; a shield member provided between the raw material storage part and the substrate supporting part; and a heating apparatus positioned at outer periphery of the vessel for growing the single crystal, thereby sublimating the raw material from the raw material storage part to grow the single crystal of the raw material onto the substrate,

wherein the shield member consists of a plurality of ring members, individual ones of the ring members having an opening with a different inner diameter and a different specific heat capacity, and the shield member is configured such that the heat capacity thereof increases from the center toward the outer periphery by arranging the ring members with a larger specific heat capacity closer to the outer periphery, and

the shield member is supported by a supporting member elongated from the bottom of the vessel for growing crystal.