Highly insulative and highly stable piezoelectric single LTGA crystal, method for producing the same, piezoelectric element using said single LTGA crystal, and combustion pressure sensor
In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La 2 O 3 , Ta 2 O 5 , Ga 2 O 3 , and Al 2 O 3 , wherein a mixture having a composition represented by y(La 2 O 3 )+(1−x−y−z)(Ta 2 O 5 )+z(Ga 2 O 3 )+x(Al 2 O 3 ) (in the formula, 0<x≦0.40/9, 3.00/9<y≦3.23/9, and 5.00/9≦z<5.50/9) is used as the polycrystalline starting material, and a single LTGA crystal is grown using the Z-axis as a crystal growth axis. The grown LTGA single crystal is preferably subjected to a vacuum heat treatment. The single LTGA crystal grown by the method according to the present invention, which is highly insulative and highly stable, can be utilized in such applications as a piezoelectric element of a highly reliable combustion pressure sensor useful in measurement of a combustion pressure in a combustion chamber of an internal combustion engine.
1. A method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La 2 O 3 , Ta 2 O 5 , Ga 2 O 3 , and Al 2 O 3 , wherein a mixture having a composition represented by y(La 2 O 3 )+(1−x−y−z)(Ta 2 O 5 )+z(Ga 2 O 3 )+x(Al 2 O 3 ) (in the formula, 0<x≦0.40/9, 3.00/9<y≦3.23/9, and 5.00/9≦z<5.50/9) is used as the polycrystalline starting material, and a single LTGA crystal is grown using the Z-axis as a crystal growth axis.
2. The method for producing a single LTGA crystal according to claim 1 , wherein the grown single LTGA crystal is subjected to a vacuum heat treatment.
3. The method for producing a single LTGA crystal according to claim 2 , wherein the vacuum heat treatment is performed for 1-24 hours at a vacuum pressure of 1 torr (133.322 Pa) or less and a temperature of 1000° C. or more and 1450° C. or less.
4. The method for producing a single LTGA crystal according to claim 1 , wherein oxygen in an amount of 0.2-5% is present in a single LTGA crystal growth atmosphere.
5. A single LTGA crystal produced by a method wherein a mixture having a composition represented by y(La 2 O 3 )+(1−x−y−z)(Ta 2 O 5 )+z(Ga 2 O 3 )+x(Al 2 O 3 ) (in the formula, 0<x≦0.40/9, 3.00/9<y≦3.2319, and 5.00/9≦z<5.5019) is used as a polycrystalline starting material, and a single LTGA crystal is grown using the Z-axis as a crystal growth axis, the crystal having an initial insulation resistivity at 500° C. immediately after growth of 3×10 8 Ω·cm or more, and an insulation resistivity after left standing in the air at 500° C. for 100 hours after the growth of also 3×10 8 Ω·cm or more.
6. The single TGA crystal according to claim 5 , having an insulation resistivity after left standing in the air at 500° C. for 100 hours after growth of 5×10 8 Ω·cm or more.
7. The single LTGA crystal according to claim 6 , having an insulation resistivity after left standing in the air at 500° C. for 100 hours after growth of 1×10 9 Ω·cm or more.
8. The single LTGA crystal according to claim 5 , having an initial insulation resistivity at 500° C. immediately after growth of 5×10 8 Ω·cm or more.
9. The single LTGA crystal according to claim 8 , having an initial insulation resistivity at 500° C. immediately after growth of 1×10 Ω·cm or more.
10. A piezoelectric element comprising the single LTGA crystal according to claim 5 .
11. The piezoelectric element according to claim 10 , wherein a rate of change of piezoelectric constant value at a given temperature of 500° C. or less relative to the piezoelectric constant value at 25° C. is within ±3%.
12. A combustion pressure sensor comprising a piezoelectric element including the single LTGA crystal according to claim 5 .
13. The combustion pressure sensor according to claim 12 , wherein a rate of change of piezoelectric constant value at a given temperature of 500° C. or less relative to the piezoelectric constant value of the piezoelectric element at 25° C. is within ±3%.