Integrated circuit including cross-coupled transistors with two transistors of different type having gate electrodes formed by common gate level feature with shared diffusion regions on opposite sides of common gate level feature
View Patent ↗A semiconductor device includes first and second p-type diffusion regions, and first and second n-type diffusion regions that are each electrically connected to a common node. Each of a number of conductive features within a gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature, with a centerline of each originating rectangular-shaped layout feature aligned in a parallel manner. The conductive features respectively form gate electrodes of first and second PMOS transistor devices, and first and second NMOS transistor devices. Widths of the first and second p-type diffusion regions are substantially equal, such that the first and second PMOS transistor devices have substantially equal widths. Widths of the first and second n-type diffusion regions are substantially equal, such that the first and second NMOS transistor devices have substantially equal widths. The first and second PMOS and first and second NMOS transistor devices form a cross-coupled transistor configuration.
1. An integrated circuit, comprising:
a gate electrode level region having a number of adjacently positioned gate electrode feature channels, each gate electrode feature channel extending lengthwise in a first direction and widthwise in a second direction perpendicular to the first direction, wherein each of the number of adjacently positioned gate electrode feature channels includes at least one gate level feature, each gate level feature having a first end located adjacent to a first line end spacing and a second end located adjacent to a second line end spacing, each gate level feature forming an electrically conductive path extending between its first and second ends,
wherein the gate electrode level region includes a first gate level feature that forms a gate electrode of a first transistor of a first transistor type and a gate electrode of a first transistor of a second transistor type, wherein the gate electrode of the first transistor of the first transistor type is substantially co-aligned with the gate electrode of the first transistor of the second transistor type along a first common line of extent in the first direction,
wherein the gate electrode level region includes a second gate level feature that forms a gate electrode of only one transistor that is a second transistor of the first transistor type,
wherein the gate electrode level region includes a third gate level feature that forms a gate electrode of only one transistor that is a second transistor of the second transistor type,
wherein the first gate level feature is positioned between the second and third gate level features in the second direction,
wherein the first and second transistors of the first transistor type are collectively separated from the first and second transistors of the second transistor type,
wherein the first and second transistors of the first transistor type share a first diffusion region of a first diffusion type,
wherein the first and second transistors of the second transistor type share a first diffusion region of a second diffusion type, and
wherein the first diffusion region of the first diffusion type and the first diffusion region of the second diffusion type are respectively formed at opposite sides of the first gate level feature.
2. An integrated circuit as recited in claim 1 , wherein each gate level feature that forms a transistor has a substantially linear shape within the gate electrode level region.
3. An integrated circuit as recited in claim 2 , wherein two of the first, second, and third gate level features has a substantially equal length as measured in the first direction.
4. An integrated circuit as recited in claim 3 , wherein the gate electrode level region includes a non-transistor gate level feature that does not form a gate electrode of a transistor and that is positioned between two other gate level features in the second direction.
5. An integrated circuit as recited in claim 4 , wherein the non-transistor gate level feature has a length as measured in the first direction substantially equal to a length of a gate level feature that forms gate electrodes of both a transistor of the first transistor type and a transistor of the second transistor type.
6. An integrated circuit as recited in claim 1 , wherein the gate electrodes of the first and second transistors of the first transistor type are positioned according to a gate pitch defined as an equal center-to-center spacing measured in the second direction between adjacent gate electrodes, and
wherein the gate electrodes of the first and second transistors of the second transistor type are positioned according to the gate pitch.
7. An integrated circuit as recited in claim 6 , wherein each gate level feature that forms a transistor has a substantially linear shape within the gate electrode level region.
8. An integrated circuit as recited in claim 7 , wherein the first diffusion region of the first diffusion type is electrically connected to the first diffusion region of the second diffusion type.
9. An integrated circuit as recited in claim 8 , wherein two of the first, second, and third gate level features has a substantially equal length as measured in the first direction.
10. An integrated circuit as recited in claim 8 , wherein the second gate level feature is electrically connected to the third gate level feature through a first electrical connection that extends in part through a single interconnect level formed above the gate electrode level region.
11. An integrated circuit as recited in claim 8 , wherein the first diffusion region of the first diffusion type is electrically connected to the first diffusion region of the second diffusion type through at least two interconnect levels formed above the gate electrode level region.
12. An integrated circuit as recited in claim 11 , wherein two of the first, second, and third gate level features has a substantially equal length as measured in the first direction.
13. An integrated circuit as recited in claim 1 , further comprising:
a first gate contact defined to physically contact the first gate level feature;
a second gate contact defined to physically contact the second gate level feature; and
a third gate contact defined to physically contact the third gate level feature,
wherein a position of the first gate contact is offset in the first direction from either a position of the second gate contact or a position of the third gate contact.
14. An integrated circuit as recited in claim 13 , wherein the first diffusion region of the first diffusion type is electrically connected to the first diffusion region of the second diffusion type through at least two interconnect levels formed above the gate electrode level region.
15. An integrated circuit as recited in claim 14 , wherein each gate level feature within the gate electrode level region has a substantially linear shape, and wherein each gate level feature within the gate electrode level region is positioned according to a gate pitch defined as an equal center-to-center spacing measured in the second direction between adjacent gate level features.
16. An integrated circuit as recited in claim 15 , wherein the gate electrode level region includes a non-transistor gate level feature that does not form a gate electrode of a transistor and that is positioned between two other gate level features in the second direction.
17. An integrated circuit as recited in claim 13 , wherein the first diffusion region of the first diffusion type is electrically connected to the first diffusion region of the second diffusion type through a single interconnect level formed above the gate electrode level region.
18. An integrated circuit as recited in claim 17 , wherein each gate level feature within the gate electrode level region has a substantially linear shape, and wherein each gate level feature within the gate electrode level region is positioned according to a gate pitch defined as an equal center-to-center spacing measured in the second direction between adjacent gate level features.
19. An integrated circuit as recited in claim 18 , wherein the gate electrode level region includes a non-transistor gate level feature that does not form a gate electrode of a transistor and that is positioned between two other gate level features in the second direction.
20. An integrated circuit as recited in claim 19 , wherein the non-transistor gate level feature has a length as measured in the first direction substantially equal to a length of a gate level feature that forms gate electrodes of both a transistor of the first transistor type and a transistor of the second transistor type.
21. An integrated circuit as recited in claim 1 , further comprising:
a first gate contact defined to physically contact the first gate level feature;
a second gate contact defined to physically contact the second gate level feature; and
a third gate contact defined to physically contact the third gate level feature,
wherein a position of the first gate contact is offset in the first direction from both the position of the second gate contact and the position of the third gate contact.
22. An integrated circuit as recited in claim 21 , wherein each gate level feature within the gate electrode level region has a substantially linear shape, and wherein each gate level feature within the gate electrode level region is positioned according to a gate pitch defined as an equal center-to-center spacing measured in the second direction between adjacent gate level features.
23. An integrated circuit as recited in claim 22 , wherein the gate electrode level region includes a non-transistor gate level feature that does not form a gate electrode of a transistor and that is positioned between two other gate level features in the second direction.
24. An integrated circuit as recited in claim 23 , wherein the first diffusion region of the first diffusion type is electrically connected to the first diffusion region of the second diffusion type through a single interconnect level formed above the gate electrode level region.
25. A method for creating a layout of an integrated circuit, comprising:
operating a computer to define a gate electrode level region having a number of adjacently positioned gate electrode feature channels, each gate electrode feature channel extending lengthwise in a first direction and widthwise in a second direction perpendicular to the first direction, wherein each of the number of adjacently positioned gate electrode feature channels includes at least one gate level feature, each gate level feature having a first end located adjacent to a first line end spacing and a second end located adjacent to a second line end spacing, each gate level feature forming an electrically conductive path extending between its first and second ends,
wherein the gate electrode level region includes a first gate level feature that forms a gate electrode of a first transistor of a first transistor type and a gate electrode of a first transistor of a second transistor type, wherein the gate electrode of the first transistor of the first transistor type is substantially co-aligned with the gate electrode of the first transistor of the second transistor type along a first common line of extent in the first direction,
wherein the gate electrode level region includes a second gate level feature that forms a gate electrode of only one transistor that is a second transistor of the first transistor type,
wherein the gate electrode level region includes a third gate level feature that forms a gate electrode of only one transistor that is a second transistor of the second transistor type,
wherein the first gate level feature is positioned between the second and third gate level features in the second direction,
wherein the first and second transistors of the first transistor type are collectively separated from the first and second transistors of the second transistor type,
wherein the first and second transistors of the first transistor type share a first diffusion region of a first diffusion type,
wherein the first and second transistors of the second transistor type share a first diffusion region of a second diffusion type, and
wherein the first diffusion region of the first diffusion type and the first diffusion region of the second diffusion type are respectively formed at opposite sides of the first gate level feature.
26. A data storage device having program instructions stored thereon for generating a layout of an integrated circuit, comprising:
program instructions for defining a gate electrode level region having a number of adjacently positioned gate electrode feature channels, each gate electrode feature channel extending lengthwise in a first direction and widthwise in a second direction perpendicular to the first direction, wherein each of the number of adjacently positioned gate electrode feature channels includes at least one gate level feature, each gate level feature having a first end located adjacent to a first line end spacing and a second end located adjacent to a second line end spacing, each gate level feature forming an electrically conductive path extending between its first and second ends,
wherein the gate electrode level region includes a first gate level feature that forms a gate electrode of a first transistor of a first transistor type and a gate electrode of a first transistor of a second transistor type, wherein the gate electrode of the first transistor of the first transistor type is substantially co-aligned with the gate electrode of the first transistor of the second transistor type along a first common line of extent in the first direction,
wherein the gate electrode level region includes a second gate level feature that forms a gate electrode of only one transistor that is a second transistor of the first transistor type,
wherein the gate electrode level region includes a third gate level feature that forms a gate electrode of only one transistor that is a second transistor of the second transistor type,
wherein the first gate level feature is positioned between the second and third gate level features in the second direction,
wherein the first and second transistors of the first transistor type are collectively separated from the first and second transistors of the second transistor type,
wherein the first and second transistors of the first transistor type share a first diffusion region of a first diffusion type,
wherein the first and second transistors of the second transistor type share a first diffusion region of a second diffusion type, and
wherein the first diffusion region of the first diffusion type and the first diffusion region of the second diffusion type are respectively formed at opposite sides of the first gate level feature.