Apparatuses and methods involving accessing distributed sub-blocks of memory cells
Apparatuses and methods involving accessing distributed sub-blocks of memory cells are described. In one such method, distributed sub-blocks of memory cells in a memory array are enabled to be accessed at the same time. Additional embodiments are described.
1. A method comprising:
accessing a first sub-block of memory cells and a second sub-block of memory cells at the same time, wherein the first and second sub-blocks of memory cells are part of a block of memory cells of a plurality of blocks of memory cells of a memory array wherein the first sub-block of the block of memory cells and the second sub-block of the block of memory cells are not in the same row or the same column of the block of memory cells.
2. The method of claim 1 , wherein accessing a first sub-block of memory cells and a second sub-block of memory cells at the same time comprises accessing the first sub-block having a first coordinate and a second coordinate at the same time as accessing the second sub-block having a first coordinate and a second coordinate, wherein the first and second coordinates of the first sub-block are not the same as the first and second coordinates of the second sub-block.
3. The method of claim 1 , wherein accessing a first sub-block of memory cells and a second sub-block of memory cells at the same time comprises accessing the first sub-block and the second sub-block at the same time, the first sub-block having an x-coordinate and a y-coordinate that are not the same as an x-coordinate and a y-coordinate of the second sub-block, where the x- and y-coordinates are part of a Cartesian coordinate system.
4. The method of claim 1 , wherein accessing a first sub-block of memory cells and a second sub-block of memory cells at the same time comprises accessing the first sub-block and the second sub-block at the same time, the first sub-block having a radial coordinate and an angular coordinate that are not the same as a radial coordinate and an angular coordinate of the second sub-block.
5. A method comprising:
receiving a memory request in an apparatus; and
executing the memory request in the apparatus, wherein the executing comprises:
accessing first data in a first sub-block of memory cells of a memory block of a memory array, wherein the memory array comprises rows and columns of sub-blocks of memory cells; and
accessing second data in a second sub-block of memory cells of the memory block of the memory array at the same time that the first data is being accessed, wherein the second sub-block is in a row of sub-blocks and a column of sub-blocks of the memory array that do not include the first sub-block.
6. The method of claim 5 , wherein accessing the first data comprises writing the first data to memory cells of the first sub-block and accessing the second data comprises writing the second data to memory cells of the second sub-block.
7. The method of claim 5 , wherein accessing the first data comprises reading the first data from memory cells of the first sub-block and accessing the second data comprises reading the second data from memory cells of the second sub-block.
8. The method of claim 5 , wherein accessing the first data comprises erasing the first data from memory cells of the first sub-block and accessing the second data comprises erasing the second data from memory cells of the second sub-block.
9. The method of claim 5 , wherein executing the memory request further comprises accessing third data in a third sub-block of memory cells of the memory array at the same time that the first data and the second data are being accessed, wherein the third sub-block is in a different row of sub-blocks and a different column of sub-blocks than the first sub-block in the memory array.
10. A method comprising accessing a plurality of sub-blocks of memory cells in a same memory block in a memory array at the same time, the accessed sub-blocks being separated from each other by sub-blocks in the memory array that are not being accessed such that no accessed sub-block of the plurality of sub-blocks is in a same row or column as another simultaneously accessed sub-block of the plurality of sub-blocks.
11. The method of claim 10 , wherein accessing a plurality of sub-blocks of memory cells further comprises accessing a plurality of sub-blocks of charge storage cells at the same time.
12. The method of claim 10 , wherein accessing a plurality of sub-blocks of memory cells further comprises accessing a plurality of sub-blocks of memory cells in a two-dimensional array of memory cells.
13. The method of claim 10 , wherein accessing a plurality of sub-blocks of memory cells further comprises accessing a plurality of sub-blocks of memory cells in a three-dimensional array of memory cells.
14. A method comprising enabling a plurality of sub-blocks of memory cells in a memory block in a memory array to be accessed at the same time, each of the enabled sub-blocks being adjacent only to sub-blocks of memory cells in the memory array that are not enabled to be accessed wherein no sub-block of the plurality of enabled sub-blocks in the memory block is in a same row or column as another simultaneously enabled sub-block of the plurality of enabled sub-blocks in the memory block.
15. The method of claim 14 , wherein enabling a plurality of sub-blocks further comprises providing an enable signal for each enabled sub-block in response to a plurality of decoding signals in a decoder circuit.
16. The method of claim 15 , further comprising changing the decoding signals to disable sub-blocks that were enabled and to enable sub-blocks that were not enabled.
17. The method of claim 14 , wherein enabling a plurality of sub-blocks further comprises enabling one sub-block of memory cells in each sub-array in a memory array comprising a plurality of sub-arrays of memory cells, each sub-array comprising a plurality of sub-blocks of memory cells.
18. The method of claim 14 , wherein enabling a plurality of sub-blocks further comprises enabling access lines coupled to the memory cells in the sub-blocks to receive programming voltages or read voltages or erase voltages.
19. An apparatus comprising:
a plurality of sub-blocks of memory cells in a memory block of an array of memory cells; and
a decoder circuit comprising a plurality of enable circuits, each enable circuit being coupled to a plurality of decoding signal lines to provide an enable signal in response to the decoding signals, the enable signals to enable a subset of the sub-blocks to be accessed, the enabled sub-blocks being distributed across the array of cells such that no accessed sub-block of the plurality of sub-blocks in the memory block is in a same row or column as another simultaneously accessed sub-block of the plurality of sub-blocks in the memory block.
20. The apparatus of claim 19 , wherein the enabled sub-blocks are adjacent only to sub-blocks that are not enabled by the enable circuits.
21. The apparatus of claim 19 , wherein the enable circuits comprise logic gates, each logic gate comprising at least one input coupled to at least one of the decoding signals.
22. The apparatus of claim 19 , wherein each enable circuit comprises an AND gate.
23. The apparatus of claim 19 , wherein the array of memory cells comprises a plurality of sub-arrays, each sub-array comprising a plurality of the sub-blocks wherein each sub-array is to include only one enabled sub-block at a time.
24. The apparatus of claim 19 , wherein the array of memory cells comprises rows and columns of the sub-blocks, wherein each row of sub-blocks is to include only one enabled sub-block at a time and each column of sub-blocks is to include only one enabled sub-block at a time.
25. The apparatus of claim 19 , wherein each memory cell comprises a charge trap transistor.
26. The apparatus of claim 19 , wherein each memory cell comprises a floating gate transistor.
27. The apparatus of claim 19 , wherein the apparatus comprises a system.
28. The apparatus of claim 19 , wherein the apparatus comprises a memory device.
29. A method comprising:
for each of a plurality of two-dimensional arrays of memory cells in a three-dimensional memory array, accessing a plurality of sub-blocks of memory cells in a same memory block in the respective two-dimensional array at the same time, the accessed sub-blocks being separated from each other by sub-blocks in the array that are not being accessed such that no accessed sub-block of the plurality of sub-blocks is in a same row or column as another simultaneously accessed sub-block of the plurality of sub-blocks; and
wherein the accessed sub-blocks in the three-dimensional array occupy the same location in each of the two-dimensional arrays.