Graphene structures with enhanced stability and composite materials formed therefrom
View Patent ↗Aspects of the invention are directed to a method of forming graphene structures. Initially, a cluster of particles is received. The cluster of particles comprises a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles. Subsequently, one or more layers are deposited on the cluster of particles with the one or more layers comprising graphene. The plurality of particles are then etched away without substantially etching the deposited one or more layers. Lastly, the remaining one or more layers are dried. The resultant graphene structures are particularly resistant to the negative effects of aggregation and compaction.
1. A method comprising the steps of:
receiving a cluster of particles, the cluster of particles comprising a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles;
depositing one or more layers on the cluster of particles, the one or more layers comprising graphene;
etching away the plurality of particles without substantially etching the deposited one or more layers; and
drying the remaining one or more layers.
2. The method of claim 1 , further comprising a step of washing the remaining one or more layers after the etching step and before performing the drying step.
3. The method of claim 2 , wherein the washing step comprises exposing the remaining one or more layers to at least one of water and acetone.
4. The method of claim 1 , wherein the drying step comprises at least one of freeze drying, spray pyrolysis, heating, and supercritical drying.
5. The method of claim 1 , wherein the plurality of particles comprise a transition metal.
6. The method of claim 5 , wherein the transition metal comprises copper, nickel, cobalt, iron, ruthenium, or iridium.
7. The method of claim 1 , wherein the plurality of particles have an average diameter between about one nanometer and about one millimeter.
8. The method of claim 1 , wherein the plurality of particles are substantially spherical or substantially ellipsoid.
9. The method of claim 1 , wherein the depositing step comprises chemical vapor deposition.
10. The method of claim 9 , wherein the chemical vapor deposition utilizes at least methane and hydrogen.
11. The method of claim 1 , wherein each particle in the plurality of particles is not completely coated by the one or more layers during the depositing step.
12. The method of claim 1 , wherein the etching step comprises wet etching.
13. The method of claim 12 , wherein the wet etching utilizes at least one of iron chloride, iron nitrate, ammonium persulfate, hydrochloric acid, and nitric acid.
14. The method of claim 1 , further comprising the step of mixing a product of the drying step with another material to form a composite material.
15. The method of claim 1 , further comprising the step of depositing another material on a product of the drying step to form a composite material.
16. The method of claim 1 , further comprising the step of installing a product of the drying step into an energy storage device.
17. The method of claim 16 , wherein the energy storage device comprises a lithium-ion battery.
18. The method of claim 1 , wherein the method does not comprise reducing all of graphene oxide, graphene fluoride, graphite oxide, and graphite fluoride.