MOS transistor

1. A metal-oxide-semiconductor (MOS) transistor, comprising:

a source region and a drain region in a semiconductor substrate;

an isolation between the source region and the drain region;

a first gate conductor between the source region and the isolation;

at least one first conductive plug, electrically connected to the first gate conductor and penetrating into the isolation; and

at least one second gate conductor comprising a pair of gate conductors on the isolation, being electrically connected to the first gate conductor and the at least one first conductive plug, wherein

the at least one first conductive plug comprises a single conductive plug between the first gate conductor and the pair of gate conductors.

2. A metal-oxide-semiconductor (MOS) transistor, comprising:

a source region and a drain region in a semiconductor substrate;

an isolation between the source region and the drain region;

a first gate conductor between the source region and the isolation;

at least one first conductive plug, electrically connected to the first gate conductor and penetrating into the isolation;

at least one second gate conductor comprising a single gate conductor on the isolation, being electrically connected to the first gate conductor and the at least one first conductive plug,

wherein one of the at least one first conductive plug is located between the first gate conductor and the at least one second gate conductor; and

the at least one first conductive plug comprises two conductive plugs sandwiching the single gate conductor.

3. A metal-oxide-semiconductor (MOS) transistor, comprising:

a source region and a drain region in a semiconductor substrate;

an isolation between the source region and the drain region;

a first gate conductor between the source region and the isolation;

at least one first conductive plug, electrically connected to the first gate conductor and penetrating into the isolation; and

at least one second gate conductor on the isolation, being electrically connected to the first gate conductor and the at least one first conductive plug, wherein

one of the at least one first conductive plug is located between the first gate conductor and the at least one second gate conductor,

the at least one second gate conductor comprises a pair of gate conductors, and

the at least one first conductive plug comprises: a first plug between the first gate conductor and the pair of gate conductors, and a second plug between the pair of gate conductors.

4. The MOS transistor of claim 3 , wherein

the at least one first conductive plug further comprises: a third plug between the first gate conductor and the pair of gate conductors.

5. The MOS transistor of claim 1 , further comprising:

a channel region in the substrate under the first gate conductor.

6. The MOS transistor of claim 5 , further comprising:

an electrical conduction path between the channel region and the drain region and passing under the isolation.

7. The MOS transistor of claim 6 , wherein the substrate has a first conductivity type, and the source region and the drain region have a second conductivity type, the MOS transistor further comprising:

a deep well of the second conductivity type in the substrate;

a first well of the first conductivity type in the deep well and partially under the first gate conductor, wherein the source region and the channel region are located in the first well; and

a second well of the second conductivity type in the deep well, having a dopant concentration higher than a dopant concentration of the deep well, wherein the drain region is located in the second well.

8. The MOS transistor of claim 7 , further comprising: a HV (high voltage) field of the second conductivity type between the deep well and the second well, wherein the HV field has a dopant concentration higher than the dopant concentration of the deep well but lower than the dopant concentration of the second well.

9. The MOS transistor of claim 1 , wherein the isolation comprises a shallow trench isolation (STI).

10. The MOS transistor of claim 1 , wherein the isolation comprises a field oxide (FOX) isolation.

11. The MOS transistor of claim 1 , wherein a distance between the at least one second gate conductor and a drain-side border of the isolation ranges from 0 to 1.4 μm.

12. The MOS transistor of claim 1 , wherein a distance between the one first conductive plug and a source-side border of the isolation ranges from 0.13 μm to 0.55 μm.

13. The MOS transistor of claim 1 , wherein a distance between a bottom of the at least one first conductive plug and a bottom of the isolation ranges from 0.1 μm to 0.3 μm.

14. The MOS transistor of claim 1 , wherein the at least one first conductive plug is electrically connected with the first and the second gate conductors via

an upper conductive layer electrically connected with the at least one first conductive plug, and

a plurality of second conductive plugs disposed over the first gate conductor and the at least one second gate conductor, respectively, and electrically connected with the upper conductive layer.

15. The MOS transistor of claim 14 , wherein the at least one first conductive plug, the second conductive plugs and the upper conductive layer are formed in an integral.

16. The MOS transistor of claim 14 , wherein the first and the second conductive plugs comprise a material different from a material of the upper conductive layer.

17. The MOS transistor of claim 1 , wherein the first gate conductor and the at least one second gate conductor comprises metal, doped polysilicon or a combination thereof.

18. The MOS transistor of claim 1 , which is a laterally diffused MOS (LDMOS) transistor or an extended-drain MOS (EDMOS).