IP Library Granted Patent US 8,699,257
Granted Patent B2
US 8,699,257 · App. 13/599,112 · Granted Apr 15, 2014

Three-dimensional writable printed memory

Inventor: Guobiao Zhang (Corvallis, OR)
Assignees: HangZhou HaiCun Information Technology Co., Ltd.; Guobiao Zhang
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Quick Facts
Patent No.
US 8,699,257
App. No.
13/599,112
Granted
Apr 15, 2014
Kind
B2
Abstract

The present invention discloses a three-dimensional writable printed memory (3D-wP). It comprises at least a printed memory array and a writable memory array. The printed memory array stores contents data, which are recorded with a printing means; the writable memory array stores custom data, which are recorded with a writing means. The writing means is preferably direct-write lithography. To maintain manufacturing throughput, the total amount of custom data should be less than 1% of the total amount of content data.

Claims (15)

1. A three-dimensional writable printed memory (3D-wP), comprising:

a semiconductor substrate;

a plurality of vertically stacked memory levels stacked above and coupled to said substrate, said memory levels comprising a plurality of printed memory arrays whose patterns represent content data;

at least a writable memory array whose patterns represent custom data;

wherein the total amount of said custom data is less than 1% of the total amount of said content data.

2. The 3D-wP according to claim 1 , wherein said content data are the same for all memory devices in a same batch with said 3D-wP.

3. The 3D-wP according to claim 2 , wherein at least two memory device in said batch have different custom data.

4. The 3D-wP according to claim 1 , wherein at least a portion of said writable memory array is located below the topmost one of said memory levels.

5. The 3D-wP according to claim 4 , wherein said writable memory array is located in selected one of said memory levels.

6. The 3D-wP according to claim 4 , wherein said writable memory array is located below all of said memory levels.

7. The 3D-wP according to claim 1 , wherein the minimum feature size of the data-coding layer for said writable memory array is larger than the minimum feature size of the data-coding layer for said printed memory arrays.

8. The 3D-wP according to claim 1 , further comprising an encrypting means.

9. The 3D-wP according to claim 8 , wherein said writable memory array stores at least a key for said encrypting means.

10. The 3D-wP according to claim 8 , wherein said writable memory array stores chip ID.

11. The 3D-wP according to claim 8 , wherein said writable memory array stores the information related to the data-array sequence.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 23, 2025
From: ZHANG, GUOBIAO, DR.
To: HANGZHOU HAICUN INFORMATION TECHNOLOGY CO., LTD.
Reel/Frame 070917/0012 →
Continuity (2)
Provisional Application 61529922 · Sep 1, 2011
Related Publication 20130058147A1 · Mar 7, 2013