Three-dimensional devices having reduced contact length
Various embodiments comprise apparatuses and methods including a memory array having alternating levels of semiconductor materials and dielectric material with strings of memory cells formed on the alternating levels. One such apparatus includes a memory array formed substantially within a cavity of a substrate. Peripheral circuitry can be formed adjacent to a surface of the substrate and adjacent to the memory array. Additional apparatuses and methods are described.
1. An apparatus, comprising:
a memory array having alternating levels of semiconductor materials and dielectric materials that are substantially parallel to a substrate on which they are formed, the memory array being at least partially within a cavity of the substrate, the alternating levels being stepped such that an uppermost surface of at least one end of a lower level of each of the semiconductor material levels extends beyond an overlying one of the semiconductor material and the dielectric material levels, the substrate being a semiconducting material, the cavity being sufficiently deep such that an upper surface of the memory array is substantially coplanar with an uppermost surface of the substrate; and
peripheral circuitry including one or more devices formed on or in the uppermost surface of the substrate and adjacent to the memory array, an upper surface of the peripheral circuitry being substantially coplanar with the upper surface of the memory array to reduce an overall height and to reduce a resistance of peripheral circuitry contacts to couple the peripheral circuitry contacts from the peripheral circuitry to respective ones of a plurality of interconnects, the plurality of interconnects being formed between the memory array and the peripheral circuitry.
2. The apparatus of claim 1 , wherein the peripheral circuitry includes passive electrical components.
3. The apparatus of claim 1 , wherein the peripheral circuitry includes active electrical components.
4. The apparatus of claim 1 , further comprising strings of memory cells formed along the alternating levels.
5. The apparatus of claim 1 , wherein the memory array is substantially within the cavity of the substrate.
6. The apparatus of claim 1 , wherein the substrate comprises a semiconductor material over a dielectric material.
7. An apparatus, comprising: a memory array substantially within a cavity of a substrate, the substrate being a semiconducting material, the cavity being sufficiently deep such that an upper surface of the memory array is substantially coplanar with an uppermost surface of the substrate, the memory array comprising a number of levels of semiconductor material and a number of levels of dielectric material that are formed substantially parallel to the substrate, each of the levels of semiconductor material being separated from a respective adjacent one of the levels of semiconductor material by at least a respective one of the levels of dielectric material, a respective string of memory cells being formed along the levels of semiconductor material, the levels being stepped such that an uppermost surface of at least one end of a lower level of each of the semiconductor material levels extends beyond an overlying one of the semiconductor material and the dielectric material levels, and peripheral circuitry having one or more devices formed on or in the uppermost surface of the substrate and adjacent to an edge of the memory array, an upper surface of the peripheral circuitry being substantially coplanar with the upper surface of the memory array to reduce an overall height and to reduce a resistance of peripheral circuitry contacts to couple the peripheral circuitry contacts from the peripheral circuitry to respective ones of a plurality of interconnects, the plurality of interconnects being formed between the memory array and the peripheral circuitry.
8. The apparatus of claim 7 , wherein the cavity is a trench formed in the substrate.
9. The apparatus of claim 7 , wherein the peripheral circuitry interfaces with the memory array.
10. The apparatus of claim 7 , wherein the peripheral circuitry includes decoders and sense circuitry.
11. A method of forming an apparatus, the method comprising:
forming a cavity in a substrate to a depth substantially equivalent to a height of a three-dimensional circuit, the substrate being a semiconducting material;
forming alternating levels semiconductor materials and dielectric materials that are substantially parallel to the substrate, the alternating levels being stepped such that an uppermost surface of at least one end of a lower level of each of the semiconductor material levels extends beyond an overlying one of the semiconductor material and the dielectric material levels, the three-dimensional circuit substantially within the cavity such that an upper surface of the three-dimensional circuit is substantially coplanar with an uppermost surface of the substrate;
forming peripheral circuitry including one or more devices formed adjacent to the cavity and on or in the uppermost surface of the substrate including forming an upper surface of the peripheral circuitry to be substantially coplanar with the upper surface of the three-dimensional circuit to reduce an overall height and to reduce a resistance of peripheral circuitry contacts to couple the peripheral circuitry contacts from the peripheral circuitry to respective ones of a plurality of interconnects; and
forming the plurality of interconnects between the three-dimensional circuit and the peripheral circuitry.
12. The method of claim 11 , further comprising forming the three-dimensional circuit to be a memory circuit having multiple levels.
13. An apparatus, comprising:
a three-dimensional array having alternating levels of semiconductor materials and dielectric materials that are substantially parallel to a substrate on which they are formed, the alternating levels being stepped such that an uppermost surface of at least one end of a lower level of each of the semiconductor material levels extends beyond an overlying one of the semiconductor material and the dielectric material levels substantially within a cavity of the substrate, the substrate being a semiconducting material, the cavity being sufficiently deep such that an upper surface of the memory array is substantially coplanar with an uppermost surface of the substrate; and
peripheral circuitry having devices formed on or in the uppermost surface of the substrate and adjacent to an edge of the three-dimensional array, an upper surface of the peripheral circuitry being substantially coplanar with the upper surface of the three-dimensional array to reduce an overall height of peripheral circuitry contacts to couple the peripheral circuitry contacts from the peripheral circuitry to respective ones of a plurality of interconnects, the plurality of interconnects being formed between the three-dimensional array and the peripheral circuitry.
14. The apparatus of claim 13 , wherein the three-dimensional array is a memory array.
15. The apparatus of claim 13 , further comprising contacts coupled to the three-dimensional array and the peripheral circuitry, wherein a height of the longest contacts coupled to the three-dimensional array are substantially longer than the contacts coupled to the peripheral circuitry.