Driving method of semiconductor storage device and semiconductor storage device

1. A semiconductor storage device comprising:

a plurality of resistance change storage elements;

a signal holding part configured to hold a plurality of voltages according to data stored in the storage elements; and

a sense amplifier configured to detect the data stored in the storage elements based on the voltages held in the signal holding part, wherein

the signal holding part holds a first voltage according to target data stored in a first storage element selected from among the storage elements, holds a second voltage according to first sample data of a first logic written to the first storage element, and holds a third voltage according to second sample data of a second logic written to the first storage element, the second logic being opposite to the first logic, and

the sense amplifier compares a read signal based on the first voltage with a reference signal generated based on the second and the third voltages in order to detect a logic of the target data stored in the first storage element, wherein the signal holding part comprises:

a first and a second transistors connected to each other in parallel, a gate electrode of each of the and the second transistors receiving the first voltage; and

a third and a fourth transistors connected to each other in parallel, gate electrodes of the third and the fourth transistors receiving the second voltage and the third voltages, respectively,

the first and the second transistors apply the read signal to the sense amplifier, and

the third and the fourth transistors apply the regerence signal to the sense amplifier.

2. The device of claim 1 , wherein the signal holding part comprises:

a first transfer gate configured to transfer the first voltage to the gate electrode of the first transistor;

a second transfer gate configured to transfer the first voltage to the gate electrode of the second transistor;

a third transfer gate configured to transfer the second voltage to the gate electrode of the third transistor; and

a fourth transistor configured to transfer the third voltage to the gate electrode of the fourth transistor.

3. The device of claim 1 , wherein the reference signal is a signal obtained from the third and the fourth transistors by an intermediate voltage between the second voltage and the third voltage.

4. The device of claim 2 , wherein the reference signal is a signal obtained from the third and the fourth transistors by an intermediate voltage between the second voltage and the third voltage.

5. The device of claim 1 , wherein the storage elements are magnetic tunnel junction elements.

6. A driving method of a semiconductor storage device, the semiconductor storage device comprising: a plurality of resistance change storage elements; a signal holding part configured to hold a plurality of voltages according to data stored in the storage elements; and a sense amplifier configured to detect the data stored in the storage elements based on the voltages held in the signal holding part, the method comprising:

during a read operation for reading target data stored in a first storage element selected from among the storage elements,

holding a first voltage according to the target data in the signal holding part;

writing first sample data of a first logic to the first storage element;

holding a second voltage according to the first sample data in the signal holding part;

writing second sample data of a second logic opposite to the first logic to the first storage element;

holding a third voltage according to the second sample data in the signal holding part; and

comparing a read signal based on the first voltage with a reference signal generated based on the second and the third voltages in order to detect a logic of the target data stored in the first storage element, in the sense amplifier, wherein the signal holding part comprises:

a first and a second transistors connected to each other in parallel, a gate electrode of each of the first and the second transistiors receiving the first voltage; and

a third and a fourth transistors connected to each other in paralle, gate electrodes of the third and the fourth transistors receiving the second voltage and the third voltages, respectively,

the first voltage is held in the gate electrode of each of the first and the second transistors,

the second voltage is held in the gate electrode of the third transistor, and

the third voltage is held in the gate electrode of the fourth transistor.

7. The method of claim 6 , wherein

the first and the second transistors apply the read signal to the sense amplifier based on the first voltage, and

the third and the fourth transistors apply the reference signal to the sense amplifier based on the second and the third voltages.

8. The method of claim 6 , wherein the reference signal is a signal obtained from the third and the fourth transistors by an intermediate voltage between the second voltage and the third voltage.

9. The method of claim 7 , wherein the reference signal is a signal obtained from the third and the fourth transistors by an intermediate voltage between the second voltage and the third voltage.

10. The method of claim 6 , further comprising writing data of a logic identical to the logic of the target data to the first storage element, when the second logic of the second sample data differs from the logic of the target data.

11. The method of claim 6 , further comprising writing data of a logic identical to the logic of the target data to the first storage element, when the second logic of the second sample data differs from the logic of the target data.

12. The method of claim 7 , further comprising writing data of a logic identical to the logic of the target data to the first storage element, when the second logic of the second sample data differs from the logic of the target data.

13. The method of claim 8 , further comprising writing data of a logic identical to the logic of the target data to the first storage element, when the second logic of the second sample data differs from the logic of the target data.

14. The method of claim 6 , wherein the storage elements are magnetic tunnel junction elements.