IP Library Granted Patent US 9,741,714
Granted Patent B2
US 9,741,714 · App. 13/601,861 · Granted Aug 22, 2017

Inductor structure

Inventors: Johan Lucas Gertenbach (Cambridge, GB); Anthony Lawrence McFarthing (Cambridgeshire, GB)
Assignee: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
H01L27/08H01F27/346H01L23/5227H01F2017/0073H01L2924/0002H01L2924/3011
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Quick Facts
Patent No.
US 9,741,714
App. No.
13/601,861
Granted
Aug 22, 2017
Kind
B2
Abstract

An inductor structure includes a first inductor and a second inductor. The second inductor includes a loop that surrounds the first inductor. The first inductor includes a first loop and a second loop, and a crossover section coupling the first loop to the second loop so as to cause current flowing through the first inductor to circulate around the first loop in a first rotational direction and around the second loop in a second rotational direction opposite to the first rotational direction; wherein the first and second inductors are arranged in an equilibrated configuration about a first axis that bisects the inductor structure such that the first loop is on one side of the first axis and the second loop is on a second side of the first axis, such that the magnetic interaction between the inductors due to current flow in the inductors is cancelled out.

Claims (30)

1. An inductor structure comprising:

a plurality of winding turns arranged in a layered structure, the layered structure comprising a substrate layer and a plurality of further layers parallel to the substrate layer;

wherein a first winding turn and a second winding turn of the plurality of winding turns are located in a first layer of the plurality of further layers, said first winding turn and said second winding turn being separated by a gap, and a third winding turn of the plurality of winding turns is located in a second layer of the plurality of further layers; said second layer being adjacent to the first layer such that the third winding turn is placed directly above the gap between the first and second windings; and

wherein the third winding turn is located between the first and second winding turns.

2. An inductor structure as claimed in claim 1 , wherein the first layer is adjacent to the second layer.

3. An inductor structure as claimed in claim 1 , wherein the first layer is between the substrate layer and the second layer.

4. An inductor structure as claimed in claim 1 , wherein the third winding turn is located centrally between the first and second winding turns.

5. An inductor structure as claimed in claim 4 , wherein the third winding turn overlaps the first and second winding turns.

6. An inductor structure as claimed in claim 4 , wherein edges of the third winding turn meet edges of the first and second winding turns.

7. An inductor structure as claimed in claim 4 , wherein there is a gap between edges of the third winding turn and edges of the first and second winding turns.

8. An inductor structure as claimed in claim 4 , wherein in the parallel direction of the layers, the first and second winding turns are the same width.

9. An inductor structure as claimed in claim 4 , wherein in the parallel direction of the layers, the third winding turn is narrower than the first and second winding turns.

10. An inductor structure as claimed in claim 1 , wherein the third winding turn overlaps the first and second winding turns.

11. An inductor structure as claimed in claim 1 , wherein edges of the third winding turn meet edges of the first and second winding turns.

12. An inductor structure as claimed in claim 1 , wherein there is a gap between edges of the third winding turn and edges of the first and second winding turns.

13. An inductor structure as claimed in claim 1 , wherein in the parallel direction of the layers, the first and second winding turns have the same width.

14. An inductor structure as claimed in claim 1 , wherein in the parallel direction of the layers, the third winding turn is narrower than the first and second winding turns.

15. An inductor structure as claimed in claim 1 , comprising further winding turns located in the first layer.

16. An inductor structure as claimed in claim 1 , comprising further winding turns located in the second layer.

17. An inductor structure as claimed in claim 1 , wherein the plurality of winding turns are formed by metallization on the substrate layer.

18. An integrated circuit including an inductor structure as claimed in claim 1 .

19. An inductor structure comprising:

a plurality of winding turns arranged in a layered structure, the layered structure comprising a substrate layer and a plurality of further layers parallel to the substrate layer;

wherein a first winding turn and a second winding turn of the plurality of winding turns are located in a first layer of the plurality of further layers, said first winding turn and said second winding turn being separated by a gap, and a third winding turn of the plurality of winding turns is located in a second layer of the plurality of further layers, said second layer being adjacent to the first layer such that the third winding turn is placed directly above the gap between the first and second windings; and

wherein in the parallel direction of the layers, the first winding turn is wider than the second winding turn.

20. An inductor structure comprising:

a plurality of winding turns arranged in a layered structure, the layered structure comprising a substrate layer and a plurality of further layers parallel to the substrate layer;

wherein a first winding turn and a second winding turn of the plurality of winding turns are located in a first layer of the plurality of further layers, said first winding turn and said second winding turn being separated by a gap, and a third winding turn of the plurality of winding turns is located in a second layer of the plurality of further layers, said second layer being adjacent to the first layer such that the third winding turn is placed directly above the gap between the first and second windings;

wherein the third winding turn is located centrally between the first and second winding turns; and

wherein in the parallel direction of the layers, the first winding turn is wider than the second winding turn.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2015
From: GERTENBACH, JOHAN LUCAS; MCFARTHING, ANTHONY LAWRENCE
To: CAMBRIDGE SILICON RADIO LIMITED
Reel/Frame 036697/0829 →
CHANGE OF NAME Recorded Sep 30, 2015
From: CAMBRIDGE SILICON RADIO LIMITED
To: QUALCOMM TECHNOLOGIES INTERNATIONAL, LTD.
Reel/Frame 036697/0925 →
Priority Claims (1)
GB 0918221.3 · Oct 16, 2009 · national
Continuity (2)
Division 12904710 · Oct 14, 2010
Related Publication 20120326826A1 · Dec 27, 2012