Processes for the purification of trichlorosilane or silicon tetrachloride

1. A process for purifying technical grade trichlorosilane or technical grade silicon tetrachloride into electronic grade trichlorosilane or electronic grade silicon tetrachloride, the process comprising:

adding diphenylthiocarbazone or triphenylchloromethane to the technical grade trichlorosilane or technical grade silicon tetrachloride to form complex impurity macromolecules with impurities in the technical grade trichlorosilane or technical grade silicon tetrachloride, the impurities being selected from the group consisting of boron impurities, metallic impurities, and combinations thereof;

distilling the technical grade trichlorosilane or technical grade silicon tetrachloride having complex impurity macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottoms comprise complex impurity macromolecules separated from the first distillation tops; and

distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane or silicon tetrachloride and a compound selected from the group consisting of phosphorus containing compounds, arsenic containing compounds, aluminum compounds, antimony compounds, carbosilane compounds, and combinations thereof, and the second distillation tops comprise electronic grade trichlorosilane or electronic grade silicon tetrachloride.

2. The process as set forth in claim 1 wherein adding diphenylthiocarbazone or triphenylchloromethane to the technical grade trichlorosilane or technical grade silicon tetrachloride comprises adding the diphenylthiocarbazone or triphenylchloromethane in an excess stoichiometric amount.

3. The process as set forth in claim 1 wherein the first distillation bottoms are at a temperature between 38° C. and 48° C. for the purification of technical grade trichlorosilane and between 65° C. and 75° C. for the purification of technical grade silicon tetrachloride.

4. The process as set forth in claim 3 wherein the first distillation bottoms are at a temperature of 42° C. for the purification of trichlorosilane and 69° C. for the purification of silicon tetrachloride.

5. The process as set forth in claim 1 wherein the first column distillation initially operated with a total reflux of the first distillation such that the impurities completely form complex impurity macromolecules.

6. The process as set forth in claim 1 wherein the boron impurities include boron trichloride, the phosphorous containing compounds include phosphorous chloride and the arsenic containing compounds include arsenic chloride.

7. A process for purifying technical grade trichlorosilane or technical grade silicon tetrachloride into electronic grade trichlorosilane or electronic grade silicon tetrachloride, the process comprising:

adding diphenylthiocarbazone or triphenylchloromethane to the technical grade trichlorosilane or technical grade silicon tetrachloride to form complex impurity macromolecules with impurities in the technical grade trichlorosilane or technical grade silicon tetrachloride, the impurities being selected from the group consisting of boron impurities, metallic impurities, and combinations thereof;

distilling the technical grade trichlorosilane or technical grade silicon tetrachloride having complex impurity macromolecules in a first column distillation, wherein the first column distillation results in first distillation tops and first distillation bottoms, wherein the first distillation bottoms comprise complex impurity macromolecules separated from the first distillation tops; and

distilling the first distillation tops in a second column distillation resulting in second distillation tops and second distillation bottoms, wherein the second distillation bottoms comprise a residual amount of trichlorosilane or silicon tetrachloride and a metalloid compound, and the second distillation tops comprise electronic grade trichlorosilane or electronic grade silicon tetrachloride.

8. The process as set forth in claim 1 wherein adding diphenylthiocarbazone or triphenylchloromethane to the technical grade trichlorosilane or technical grade silicon tetrachloride comprises adding the diphenylthiocarbazone or triphenylchloromethane in an excess stoichiometric amount.

9. The process as set forth in claim 1 wherein the first distillation bottoms are at a temperature between 38° C. and 48° C. for the purification of technical grade trichlorosilane and between 65° C. and 75° C. for the purification of technical grade silicon tetrachloride.

10. The process as set forth in claim 3 wherein the first distillation bottoms are at a temperature of 42° C. for the purification of trichlorosilane and 69° C. for the purification of silicon tetrachloride.

11. The process as set forth in claim 1 wherein the first column distillation initially operated with a total reflux of the first distillation such that the impurities completely form complex impurity macromolecules.

12. The process as set forth in claim 1 wherein the boron impurities include boron trichloride, the phosphorous containing compounds include phosphorous chloride and the arsenic containing compounds include arsenic chloride.