Duplexer with transmission and reception filters each including resonators formed on different chips
A duplexer includes a transmission filter and a reception filter having different passbands, wherein: first resonators that are series resonators or parallel resonators included in the transmission and reception filters so as to form a skirt characteristic at a guard band side are a temperature compensated type piezoelectric thin film resonator or a surface acoustic wave resonator using Love waves, and second resonators that form a skirt characteristic at an opposite side to the guard band are one of a temperature non-compensated type piezoelectric thin film resonator, a surface acoustic wave resonator using a lithium tantalate substrate or a substrate made by bonding a lithium tantalate substrate on a sapphire substrate, and a surface acoustic wave resonator using Love waves.
1. A duplexer including a transmission filter and a reception filter, a passband of one filter of the transmission filter and the reception filter being lower than a passband of the other of the transmission filter and the reception filter, wherein:
each of the transmission filter and the reception filter includes a series resonator and a parallel resonator connected in a ladder shape,
first resonators that are the series resonator of the one filter and the parallel resonator of the other filter and are formed on a first chip,
second resonators that are the series resonator of the other filter and the parallel resonator of the one filter and are formed on a second chip that is different from the first chip, and
wherein a temperature coefficient of frequency of the first resonators is smaller than a temperature coefficient of frequency of the second resonators.
2. The duplexer according to claim 1 , wherein
an effective electromechanical coupling coefficient of the first resonators is smaller than an effective electromechanical coupling coefficient of the second resonators.
3. A duplexer including a transmission filter and a reception filter, a passband of one filter of the transmission filter and the reception filter being lower than a passband of the other of the transmission filter and the reception filter, wherein:
each of the transmission filter and the reception filter includes a series resonator and a parallel resonator connected in a ladder shape,
first resonators that are the series resonator of the one filter and the parallel resonator of the other filter and are formed on a first chip, and
second resonators that are the series resonator of the other filter and the parallel resonator of the one filter and are formed on a second chip that is different from the first chip,
wherein
each of the first resonators is a temperature compensated type piezoelectric thin film resonator that is made of layers including a piezoelectric thin film and lower and upper electrodes facing each other across the piezoelectric thin film, and includes a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric thin film and sandwiched between the upper electrode and the lower electrode, and each of the second resonators is a temperature non-compensated type piezoelectric thin film resonator that is made of layers including a piezoelectric thin film and lower and upper electrodes facing each other across the piezoelectric thin film, and in which a temperature compensation film is not sandwiched between the upper electrode and the lower electrode.
4. The duplexer according to claim 3 , wherein
the layers of the series resonator included in the first resonators has film thicknesses equal to those of corresponding layers of the parallel resonator included in the first resonators except one layer, and the layers of the series resonator included in the second resonators has film thicknesses equal to those of corresponding layers of the parallel resonator included in the second resonators except one layer.
5. The duplexer according to claim 3 , wherein
the temperature compensation film mainly includes silicon oxide or silicon nitride.
6. The duplexer according to claim 3 , wherein
the piezoelectric thin film mainly includes aluminum nitride.
7. A duplexer including a transmission filter and a reception filter, a passband of one filter of the transmission filter and the reception filter being lower than a passband of the other of the transmission filter and the reception filter, wherein:
each of the transmission filter and the reception filter includes a series resonator and a parallel resonator connected in a ladder shape,
first resonators that are the series resonator of the one filter and the parallel resonator of the other filter and are formed on a first chip, and
second resonators that are the series resonator of the other filter and the parallel resonator of the one filter and are formed on a second chip that is different from the first chip,
wherein
each of the first resonators is a temperature compensated type piezoelectric thin film resonator that is made of layers including a piezoelectric thin film and lower and upper electrodes facing each other across the piezoelectric thin film, and includes a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric thin film and sandwiched between the upper electrode and the lower electrode, and each of the second resonators is a surface acoustic wave resonator using a lithium tantalate substrate.
8. A duplexer including a transmission filter and a reception filter, a passband of one filter of the transmission filter and the reception filter being lower than a passband of the other of the transmission filter and the reception filter, wherein:
each of the transmission filter and the reception filter includes a series resonator and a parallel resonator connected in a ladder shape,
first resonators that are the series resonator of the one filter and the parallel resonator of the other filter and are formed on a first chip, and
second resonators that are the series resonator of the other filter and the parallel resonator of the one filter and are formed on a second chip that is different from the first chip,
wherein
each of the first resonators is a temperature compensated type piezoelectric thin film resonator that is made of layers including a piezoelectric thin film and lower and upper electrodes facing each other across the piezoelectric thin film, and includes a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric thin film and sandwiched between the upper electrode and the lower electrode, and each of the second resonators is a surface acoustic wave resonator using a substrate made by bonding a lithium tantalate substrate on a sapphire substrate.
9. A duplexer including a transmission filter and a reception filter, a passband of one filter of the transmission filter and the reception filter being lower than a passband of the other of the transmission filter and the reception filter, wherein:
each of the transmission filter and the reception filter includes a series resonator and a parallel resonator connected in a ladder shape,
first resonators that are the series resonator of the one filter and the parallel resonator of the other filter and are formed on a first chip, and
second resonators that are the series resonator of the other filter and the parallel resonator of the one filter and are formed on a second chip that is different from the first chip,
wherein
each of the first resonators is a temperature compensated type piezoelectric thin film resonator that is made of layers including a piezoelectric thin film and lower and upper electrodes facing each other across the piezoelectric thin film, and includes a temperature compensation film having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric thin film and sandwiched between the upper electrode and the lower electrode, and each of the second resonators is a Love wave type surface acoustic wave resonator.
10. A duplexer including a transmission filter and a reception filter, a passband of one filter of the transmission filter and the reception filter being lower than a passband of the other of the transmission filter and the reception filter, wherein:
each of the transmission filter and the reception filter includes a series resonator and a parallel resonator connected in a ladder shape,
first resonators that are the series resonator of the one filter and the parallel resonator of the other filter and are formed on a first chip, and
second resonators that are the series resonator of the other filter and the parallel resonator of the one filter and are formed on a second chip that is different from the first chip,
wherein
the first chip and the second chip are flip-chip mounted on a mounting substrate.
11. The duplexer according to claim 10 , wherein
the first resonator and the second resonator included in the transmission filter are electrically connected each other via wirings formed on a die attach layer of the mounting substrate, and the first resonator and the second resonator included in the reception filter are electrically connected via the wirings formed on the die attach layer of the mounting substrate.