Semiconductor devices and methods of fabricating the same
A MOS transistor includes a pair of impurity regions formed in a substrate as spaced apart from each other, and a gate electrode formed on a region of the substrate located between the pair of impurity regions. Each of the impurity regions is formed of a first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer on the second epitaxial layer. The first epitaxial layer is formed of at least one first sub-epitaxial layer and a respective second sub-epitaxial layer stacked on each first sub-epitaxial layer. An impurity concentration of the first sub-epitaxial layer is less than that of the second sub-epitaxial layer.
1. A method of fabricating a semiconductor device, the method comprising:
etching a substrate to form a recess therein;
forming a first epitaxial layer on interior sidewall surfaces of the substrate delimiting sides of the recess, and a surface of the substrate delimiting the bottom of the recess; and
sequentially forming a second epitaxial layer and a third epitaxial layer both on the first epitaxial layer,
wherein the forming of the first epitaxial layer includes sequentially forming, at least one time, a first sub-epitaxial layer and a second sub-epitaxial layer in such a way that a concentration of an impurity of material constituting the first sub-epitaxial layer is less than a concentration of an impurity of material constituting the second sub-epitaxial layer.
2. The method of claim 1 , wherein a total time (tmt) it takes to form the first epitaxial layer, a first time (tm 1 ) it takes to form a said first sub-epitaxial layer, a second time (tm 2 ) it takes to form a said second sub-epitaxial layer, and a number (Nr) of times a pair of respective ones of the first and second sub-epitaxial layers is formed, satisfy the following equation:
tmt =( tm 1+ tm 2)× Nr.
3. The method of claim 2 , wherein a ratio of the second time (tm 2 ) to the first time (tm 1 ) is about 0.01 to about 0.5.
4. The method of claim 1 , further comprising forming an additional said first sub-epitaxial layer on a topmost one of the second sub-epitaxial layers in the stack before the second epitaxial layer is formed, and
wherein a total time (tmt) it takes to form the first epitaxial layer, a first time (tm 1 ) it takes to form a said first sub-epitaxial layer, a second time (tm 2 ) it takes to form a said second sub-epitaxial layer, and a number (Nr) of times a pair of respective ones of the first and second sub-epitaxial layers is formed, satisfy the following equation:
tmt =(( tm 1+ tm 2)× Nr )+ tm 1.
5. The method of claim 1 , wherein the first epitaxial layer is formed using a modulated in-situ doping technique.
6. The method of claim 1 , wherein the forming of the first sub-epitaxial layer comprises supplying (H 2 ), (GeH 4 ), gaseous (HCl) and at least one of (SiH 2 Cl 2 ) and (SiH 4 ) into a process chamber in which the substrate is supported.
7. The method of claim 6 , wherein the second sub-epitaxial layer is formed by supplying (H 2 ), (GeH 4 ), gaseous (HCl), (B 2 H 6 ) and at least one of (SiH 2 Cl 2 ) and (SiH 4 ) into the process chamber.
8. A method of fabricating a MOS transistor, the method comprising:
forming a gate insulating layer and a gate electrode layer on an active region of a substrate;
etching the active region of the substrate to form recesses therein on opposite sides of a channel region;
filling the recesses epitaxially with material whose lattice constant is greater than that of the channel region to form source/drain regions on the opposite sides of the channel region, whereby the source/drain regions apply stress to the channel region,
wherein the filling of the recesses comprises forming a first epitaxial layer that extends along sidewall surfaces delimiting sides of the recesses, and bottom surfaces delimiting the bottoms of the recesses, to such a thickness as to leave upper parts of the recesses unfilled, and
forming a second epitaxial layer on the first epitaxial layer to such a thickness as to at least fill what remains of the recesses; and
subsequently annealing the substrate.
9. The method of claim 8 , wherein the forming of the first epitaxial layer comprises epitaxially forming a first layer of an intrinsic semiconductor material along the sidewall and bottom surfaces to form a first sub-epitaxial layer, and
subsequently epitaxially forming a second layer of an intrinsic semiconductor material on the first layer, and doping the second layer with an impurity, to form a second sub-epitaxial layer on the first sub-epitaxial layer and which the second sub-epitaxial layer has a concentration of an impurity greater than that of the first sub-epitaxial layer.
10. The method of claim 9 , wherein the forming of the second epitaxial layer comprises epitaxially forming another layer of an intrinsic semiconductor material on the first epitaxial layer, and doping said another layer with an impurity at a concentration greater than that used to form the second sub-epitaxial layer.
11. The method of claim 10 , wherein the annealing forms a silicide layer at an upper surface of the gate electrode.
12. The method of claim 10 , further comprising:
epitaxially forming a third epitaxial layer on the second epitaxial layer; and
forming a metal layer on the third epitaxial layer,
wherein the annealing forms a silicide layer on the third epitaxial layer.