Semiconductor device and manufacturing method thereof
A semiconductor device containing: a semiconductor element; a support substrate; an insulating material layer for sealing the semiconductor element and a periphery thereof; a metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and metal vias provided in the insulating material layer and electrically connected to the metal thin film wiring layer. The semiconductor element is provided in a plurality of units and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the metal thin film wiring layer, and electrode pads of each semiconductor element are exposed without being hidden by the semiconductor element stacked thereabove.
1. A semiconductor device, comprising:
a semiconductor element;
a support substrate;
an insulating material layer for sealing the semiconductor element and a periphery thereof;
a sole metal thin film wiring layer provided in the insulating material layer, with a part thereof being exposed on an external surface; and
metal vias provided in the insulating material layer and electrically connected to the sole metal thin film wiring layer, wherein
the semiconductor element is provided in a plurality, and the respective semiconductor elements are stacked via an insulating material such that a circuit surface of each semiconductor element faces the sole metal thin film wiring layer, and
electrode pads of each semiconductor element are electrically connected to the sole metal thin film wiring layer by a conductive metal filled in an opening formed in the insulating material layer on the electrode pads and directly extending to the sole metal thin film wiring layer for causing the electrode pads to be exposed to the sole metal thin film wiring layer without being hidden by the semiconductor element stacked thereabove, whereby said plurality of semiconductor elements are electrically connected to the sole metal thin film wiring layer.
2. A semiconductor device, comprising a plurality of unit structure components stacked on a support substrate, each unit structure component comprising:
a semiconductor element;
an insulating material layer for sealing the semiconductor element and a periphery thereof;
a sole metal thin film wiring layer provided in the insulating material layer, with a part of this sole metal thin film wiring layer being exposed on an external surface; and
metal vias provided in the insulating material layer and electrically connected to the sole metal thin film wiring layer, wherein
the semiconductor element is provided in a plurality, and the respective semiconductor elements are stacked such that a circuit surface of each semiconductor element faces the sole metal thin film wiring layer, and
electrode pads of each semiconductor element are electrically connected to the sole metal thin film wiring layer by a conductive metal filled in an opening formed in the insulating material layer on the electrode pads and directly extending to the sole metal thin film wiring layer for causing the electrode pads to be exposed to the sole metal thin film wiring layer without being hidden by the semiconductor element stacked thereabove, whereby said plurality of semiconductor elements are electrically connected to the sole metal thin film wiring layer,
wherein the respective unit structure components are electrically connected by the metal vias.
3. The semiconductor device according to claim 1 , wherein the insulating material layer is formed of a plurality of insulating material layers made of respectively different insulating materials.
4. The semiconductor device according to claim 2 , wherein the insulating material layer is formed of a plurality of insulating material layers made of respectively different insulating materials.
5. The semiconductor device according to claim 1 , wherein the insulating material layer is formed of a photosensitive insulating resin layer and a non-photosensitive insulating resin layer.
6. The semiconductor device according to claim 2 , wherein the insulating material layer is formed of a photosensitive insulating resin layer and a non-photosensitive insulating resin layer.
7. The semiconductor device according to claim 1 , wherein the support substrate is made of a metal material, and the support substrate is connected to a GND.
8. The semiconductor device according to claim 2 , wherein the support substrate is made of a metal material, and the support substrate is connected to a GND.
9. The semiconductor device according to claim 1 , wherein the support substrate is made of an organic material or made of an organic material and a metal conductor.
10. The semiconductor device according to claim 2 , wherein the support substrate is made of an organic material or made of an organic material and a metal conductor.
11. The semiconductor device according to claim 9 , wherein other semiconductor package or electronic component is stacked via the support substrate, and the semiconductor device is electrically connected to the other semiconductor package or electronic component via through-holes provided to the support substrate.
12. The semiconductor device according to claim 10 , wherein other semiconductor package or electronic component is stacked via the support substrate, and the semiconductor device is electrically connected to the other semiconductor package or electronic component via through-holes provided to the support substrate.