Backside structure and methods for BSI image sensors
BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
1. A method for forming an image sensor comprising:
providing a semiconductor substrate having a sensor array region and a periphery region and having a front side surface and an opposing back side surface;
forming a bottom anti-reflective coating (BARC) over the back side surface of the semiconductor substrate to a first thickness, over the sensor array region and the periphery region;
forming a first dielectric layer over the BARC;
forming a metal shield over the first dielectric layer;
selectively removing the metal shield from over the sensor array region;
selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains, during the selectively removing the first dielectric layer;
forming a second dielectric layer over the remainder of the first thickness of the BARC and over the metal shield over the periphery region; and
forming a passivation layer over the second dielectric layer.
2. The method of claim 1 , wherein the portion of the first thickness of the BARC removed is at least about 10% of the first thickness.
3. The method of claim 2 , wherein the portion of the BARC that remains has a thickness that is less than about 90% of the first thickness.
4. The method of claim 1 , wherein forming the first dielectric layer comprises forming buffer oxide.
5. The method of claim 1 , wherein forming the second dielectric layer comprises depositing one selected from the group consisting essentially of SiO 2 , SiN, SiC, SiON, Ta 2 O 5 , Al 2 O 3 , HfO, and a complex film formed by combinations of these components.
6. The method of claim 1 , wherein forming the second dielectric layer comprises depositing one selected from the group consisting essentially of SiO 2 , SiN, SiC, SiON, Ta 2 O 5 , Al 2 O 3 , HfO, and a layer formed of combinations of these components.
7. The method of claim 1 , wherein following the forming of the passivation layer, a total thickness of the remainder of the first thickness of the BARC, the second dielectric layer, and the passivation layer over the sensor array region ranges from about 500 Å to about 8000 Å.
8. The method of claim 1 , wherein forming the second dielectric layer comprises forming a second dielectric layer that has a thickness that varies less than 7% in uniformity.
9. The method of claim 1 , wherein the periphery region further comprises CMOS transistors.
10. The method of claim 1 , wherein a portion of the second dielectric layer formed over the sensor array region has a third thickness and a portion of the second dielectric layer formed on a vertical sidewall of the metal shield after the selectively removing has a fourth thickness, and a ratio of the fourth thickness to the third thickness is greater than about 40%.
11. The method of claim 1 , wherein the selectively removing comprises performing a dry etch process, while the periphery region is protected by a photoresist layer.