Circuit with electrostatic discharge protection
A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.
1. A device comprising:
a circuit including a source region and a drain region; and
a silicon-controlled rectifier including a contact region coupled with the drain region of the circuit, wherein the silicon-controlled rectifier is configured to pass a transfer charge from the contact region to the source region of the circuit during an electrostatic discharge (ESD) event,
wherein the circuit includes an isolation structure interposed between a gate oxide of the circuit and the drain region, and wherein a portion of the drain region proximate to the isolation structure is substantially metal-free.
2. The device of claim 1 , wherein the silicon-controlled rectifier is configured to pass the transfer charge from the contact region to the source region of the circuit when the transfer charge has a voltage level above a trigger voltage.
3. The device of claim 2 , wherein the silicon-controlled rectifier further comprises an isolation structure interposed between the contact region of the silicon-controlled rectifier and the drain region of the circuit, and wherein a magnitude of the trigger voltage corresponds a distance between the contact region of the silicon-controlled rectifier and the drain region of the circuit.
4. The device of claim 2 , wherein the drain region of the circuit is an extended drain, and wherein a magnitude of the trigger voltage corresponds a distance between the gate oxide of the circuit and the extended drain.
5. The device of claim 1 , wherein an entirety of the drain region proximate to the isolation structure is substantially metal-free.
6. The device of claim 1 , wherein the portion of the drain region proximate to the isolation structure is substantially metal-free to a degree that metal protrusion does not occur from the portion toward the isolation structure during the ESD event.
7. The device of claim 2 , wherein the source region of the circuit is disposed in a well, and wherein a magnitude of the trigger voltage corresponds a distance between the drain region and a location of the well associated with the source region of the circuit.
8. The device of claim 1 , wherein the silicon-controlled rectifier includes a pair of bipolar transistors coupled between the contact region and the source region of the circuit.