Deep ultraviolet light emitting diode
A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane.
1. A heterostructure comprising:
a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality of quantum wells comprise a semiconductor material having a first non-zero band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, wherein at least one of: the plurality of quantum wells or the plurality of barriers includes a percolated carbon atomic plane located within the semiconductor material.
2. The heterostructure of claim 1 , wherein the percolated carbon atomic plane is a graphene atomic plane.
3. The heterostructure of claim 1 , wherein the percolated carbon atomic plane is doped.
4. The heterostructure of claim 3 , wherein a dopant of the percolated carbon atomic plane is selected from the group consisting of: magnesium, fluorine, gold, aromatic molecules, and polar molecules.
5. The heterostructure of claim 1 , wherein the short period superlattice is formed from a nitride-based material, and wherein the short period superlattice is included in the heterostructure for p-type conduction.
6. The heterostructure of claim 1 , wherein the heterostructure is configured to operate as a light emitting structure.
7. The heterostructure of claim 6 , wherein the light emitting structure is a deep ultraviolet light emitting structure.
8. The heterostructure of claim 1 , wherein each of the plurality of quantum wells includes at least one carbon plane and wherein none of the plurality of barriers includes a carbon plane.
9. The heterostructure of claim 1 , wherein each of the plurality of barriers includes at least one carbon plane and wherein none of the plurality of quantum wells includes a carbon plane.
10. The heterostructure of claim 1 , wherein the short period superlattice is one of: a p-type contact or an n-type contact.
11. A light emitting device comprising:
a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality of quantum wells comprise a semiconductor material having a first non-zero band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, wherein at least one of: the plurality of quantum wells or the plurality of barriers includes a percolated carbon atomic plane located within the semiconductor material.
12. The device of claim 11 , wherein the short period superlattice is formed of alternating layers of aluminum gallium nitride of different compositions.
13. The device of claim 11 , wherein the short period superlattice is a light generating structure of the device.
14. The device of claim 11 , wherein the device is a vertically conducting light emitting device including:
a p-type contact on a first side of the device; and
an n-type contact on a second side of the device opposite the first side.
15. The device of claim 14 , wherein at least one of: the p-type contact or the n-type contact includes the short period superlattice.
16. A method comprising:
fabricating a heterostructure, the fabricating including forming a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers, wherein the plurality of quantum wells comprise a semiconductor material having a first non-zero band gap and the plurality of barriers comprise a semiconductor material having a second band gap wider than the first band gap, wherein the forming includes incorporating a percolated carbon atomic plane in the semiconductor material of at least one of: the plurality of quantum wells or the plurality of barriers.
17. The method of claim 16 , further comprising fabricating a vertically conducting light emitting diode, wherein the fabricating the vertically conducting light emitting diode includes the fabricating the heterostructure.
18. The method of claim 17 , wherein the fabricating the vertically conducting light emitting diode further includes removing a substrate from the heterostructure.
19. The method of claim 17 , wherein fabricating at least one of: an n-type contact or a p-type contact for the vertically conducting light emitting diode includes the fabricating the heterostructure.
20. The method of claim 17 , wherein the vertically conducting light emitting diode is configured to emit deep ultraviolet light.