Method for estimating the diffusion length of metallic species within a three-dimensional integrated structure, and corresponding three-dimensional integrated structure
View Patent ↗A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations.
1. A method for estimating a diffusion length of a metallic species between a pair of metallic lines, each included within a respective one of a pair of integrated circuits of a three-dimensional integrated structure, the method comprising:
diffusing the metallic species in the pair of metallic lines;
placing a measuring apparatus in electrical contact with each of the pair of metallic lines;
measuring a resistance based upon the electrical contact with the pair of metallic lines; and
providing an estimate of the diffusion length based upon the measured resistance.
2. The method according to claim 1 , further comprising, prior to measuring the resistance, forming a plurality of cavities passing through one of the pair of integrated circuits and opening onto electrical contact locations with the pair of metallic lines; and wherein placing the measuring apparatus comprises placing the measuring apparatus in electrical contact with the pair of metallic lines at a bottom of each of the plurality of cavities.
3. The method according to claim 1 , wherein the diffusion of the metallic species comprises an annealing of the metallic species.
4. The method according to claim 1 , wherein the diffusion of the metallic species comprises applying an electrical potential difference between the pair of metallic lines.
5. The method according to claim 1 , further comprising measuring a resistance based upon the electrical contact with the pair of metallic lines prior to the diffusion of the metallic species.
6. The method according to claim 2 , further comprising forming a conductive layer at the bottom of and on walls of each of the plurality of cavities.
7. The method according to claim 2 , wherein placing the measuring apparatus comprises placing each of a pair of probe tips of the measuring device in electrical contact with respective ones of the pair of metallic lines.
8. The method according to claim 2 , wherein placing the measuring apparatus comprises placing each of a pair of welded wires at the bottom of respective ones of the pair of cavities.
9. A method for estimating a diffusion length of a metallic species between a pair of metallic lines, each included within a respective one of a pair of assembled integrated circuits of a three-dimensional integrated structure, the method comprising:
diffusing the metallic species in the pair of metallic lines;
forming a plurality of cavities passing through one of the pair of assembled integrated circuits and opening onto electrical contact locations with the pair of metallic lines;
placing a measuring apparatus in electrical contact with each of the pair of metallic lines at the electrical contact locations;
measuring a resistance based upon the electrical contact with the pair of metallic lines at a bottom of each of the plurality of cavities; and
providing an estimate of the diffusion length based upon the measured resistance.
10. The method according to claim 9 , wherein the plurality of cavities are formed prior to measuring the resistance.
11. The method according to claim 9 , wherein the diffusion of the metallic species comprises an annealing of the metallic species.
12. The method according to claim 9 , wherein the diffusion of the metallic species comprises applying an electrical potential difference between the pair of metallic lines.
13. The method according to claim 9 , further comprising measuring a resistance based upon the electrical contact with the pair of metallic lines prior to the diffusion of the metallic species.
14. The method according to claim 9 , further comprising forming a conductive layer at the bottom of and on walls of each of the plurality of cavities.
15. The method according to claim 9 , wherein placing the measuring apparatus comprises placing each of pair of probe tips of the measuring device in electrical contact with respective ones of the pair of metallic lines.
16. The method according to claim 9 , wherein placing the measuring apparatus comprises placing each of a pair of welded wires at the bottom of respective ones of the pair of cavities.