Manufacturing method for semiconductor device
View Patent ↗A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.
1. A manufacturing method for a semiconductor device, comprising:
forming a first electrode on a first face of a semiconductor substrate, the semiconductor substrate having a second face on a side opposite to the first face;
forming a second electrode having a top face and a rear face on the first face of the semiconductor substrate;
forming a through hole in the semiconductor substrate;
forming, in the through hole, a conductive portion having an end face electrically connected to the rear face of the second electrode;
forming, on the first face of the semiconductor substrate, an external connection terminal electrically connected to the first electrode; and
forming an insulating film on a side wall of the through hole.
2. The manufacturing method for a semiconductor device according to claim 1 , wherein the end face of the conductive portion is directly connected to the rear face of the second electrode.
3. The manufacturing method for a semiconductor device according to claim 1 , further comprising:
forming an insulating layer between the semiconductor substrate and the external connection terminal; and
forming on the first face of the semiconductor substrate an interconnection electrically connected to the first electrode and the external connection terminal.
4. The manufacturing method for a semiconductor device according to claim 1 , further comprising:
forming, on the second face of the semiconductor substrate, a connection electrode electrically connected to the conductive portion, wherein
the connection electrode and the conductive portion are formed in one operation.