Semiconductor device
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
1. A semiconductor device comprising:
a gate electrode;
a gate insulating film covering the gate electrode;
an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode;
a channel protective film provided to be in contact with the oxide semiconductor film; and
a source electrode and a drain electrode which are provided over the channel protective film and electrically connected to the oxide semiconductor film,
wherein the gate insulating film includes silicon and oxygen,
wherein the oxide semiconductor film includes a first region in contact with the gate insulating film,
wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %,
wherein at least the first region includes a crystal portion, and
wherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region is lower than the concentration of silicon included in the first region.
2. The semiconductor device according to claim 1 , wherein the first region has a thickness less than or equal to 5 nm.
3. The semiconductor device according to claim 1 , wherein a crystal portion is included in a region in the oxide semiconductor film other than the first region.
4. The semiconductor device according to claim 1 , wherein a c-axis in the crystal portion is aligned in a direction perpendicular to an interface between the oxide semiconductor film and the gate insulating film.
5. The semiconductor device according to claim 1 , wherein the concentration of silicon included in the first region is lower than or equal to 0.1 at. %.
6. The semiconductor device according to claim 1 ,
wherein the gate insulating film includes carbon, and
wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 .
7. The semiconductor device according to claim 1 , wherein the crystal portion comprises a microcrystalline.
8. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises indium and zinc.
9. A semiconductor device comprising:
a gate electrode;
a gate insulating film covering the gate electrode;
an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode;
a source electrode and a drain electrode electrically connected to the oxide semiconductor film; and
a protective insulating film covering the oxide semiconductor film, the source electrode and the drain electrode,
wherein each of the gate insulating film and the protective insulating film includes silicon and oxygen,
wherein the oxide semiconductor film includes a first region in contact with the gate insulating film,
wherein the oxide semiconductor film includes a second region in contact with the protective insulating film,
wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %,
wherein a concentration of silicon in the second region is lower than or equal to 1.0 at. %,
wherein at least the first region and the second region include a crystal portion, and
wherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region and the second region is lower than the concentrations of silicon included in the first region and the second region.
10. The semiconductor device according to claim 9 ,
wherein the first region has a thickness less than or equal to 5 nm, and
wherein the second region has a thickness less than or equal to 5 nm.
11. The semiconductor device according to claim 9 , wherein a region in the oxide semiconductor film other than the first region and the second region includes a crystal portion.
12. The semiconductor device according to claim 9 , wherein a c-axis in the crystal portion is aligned in a direction perpendicular to an interface between the oxide semiconductor film and the gate insulating film.
13. The semiconductor device according to claim 9 , wherein the concentration of silicon included in the first region and the second region is lower than or equal to 0.1 at. %.
14. The semiconductor device according to claim 9 ,
wherein the gate insulating film includes carbon, and
wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 .
15. The semiconductor device according to claim 9 , wherein the crystal portion comprises a microcrystalline.
16. The semiconductor device according to claim 9 , wherein the oxide semiconductor film comprises indium and zinc.
17. A semiconductor device comprising:
a gate electrode;
a gate insulating film covering the gate electrode;
an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode; and
a source electrode and a drain electrode which are provided over the oxide semiconductor film and electrically connected to the oxide semiconductor film,
wherein the gate insulating film includes silicon and oxygen,
wherein the oxide semiconductor film includes a first region in contact with the gate insulating film,
wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %,
wherein at least the first region includes a crystal portion, and
wherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region is lower than the concentration of silicon included in the first region.
18. The semiconductor device according to claim 17 , wherein the first region has a thickness less than or equal to 5 nm.
19. The semiconductor device according to claim 17 , wherein a crystal portion is included in a region in the oxide semiconductor film other than the first region.
20. The semiconductor device according to claim 17 , wherein a c-axis in the crystal portion is aligned in a direction perpendicular to an interface between the oxide semiconductor film and the gate insulating film.
21. The semiconductor device according to claim 17 , wherein the concentration of silicon included in the first region is lower than or equal to 0.1 at. %.
22. The semiconductor device according to claim 17 ,
wherein the gate insulating film includes carbon, and
wherein a concentration of carbon in the first region is lower than or equal to 1.0×10 20 atoms/cm 3 .
23. The semiconductor device according to claim 17 , wherein the crystal portion comprises a microcrystalline.
24. The semiconductor device according to claim 17 , wherein the oxide semiconductor film comprises indium and zinc.