Methods of manufacturing large-area sputtering targets
View Patent ↗In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.
1. A method of forming a joined sputtering target comprising a sputtering material that comprises an alloy or mixture of first and second constituent materials, the method comprising:
disposing two discrete sputtering-target tiles substantially in contact at an interface therebetween;
disposing a first welding electrode above the interface;
disposing a second welding electrode below the interface;
simultaneously (i) translating the first welding electrode along at least portions of top surfaces of the tiles along the interface, and (ii) translating the second welding electrode along at least portions of bottom surfaces of the tiles along the interface, the first welding electrode remaining disposed substantially above the second welding electrode thereduring; and
during at least part of the translation of the first and second welding electrodes, passing an electrical current through the tiles between the first and second welding electrodes to weld the tiles together at the interface, thereby forming the joined sputtering target that comprises:
first and second discrete sputtering-target tiles joined at the interface, the first and second tiles each comprising the sputtering material, wherein, at the interface, each of the first and second tiles comprises both (i) regions consisting essentially of the first constituent material and (ii) regions consisting essentially of the second constituent material,
wherein across an entirety of the interface, (i) regions of the first tile consisting essentially of the first constituent material are bonded to regions of the second tile consisting essentially of the first constituent material, (ii) regions of the first tile consisting essentially of the first constituent material are bonded to regions of the second tile consisting essentially of the second constituent material, (iii) regions of the first tile consisting essentially of the second constituent material are bonded to regions of the second tile consisting essentially of the first constituent material, and (iv) no regions of the first tile consisting essentially of the second constituent material are bonded to regions of the second tile consisting essentially of the second constituent material.
2. The method of claim 1 , further comprising spray-depositing a spray material on at least a portion of at least one of the tiles prior to disposing the tiles substantially in contact, the spray material being disposed at the interface after the tiles are disposed substantially in contact.
3. The method of claim 2 , wherein the spray material comprises the sputtering material.
4. The method of claim 3 , wherein the spray material consists essentially of the sputtering material.
5. The method of claim 2 , wherein spray-depositing the spray material comprises cold spray.
6. The method of claim 1 , wherein welding the tiles together comprises melting at least one constituent material, at least one other constituent material remaining unmelted thereduring.
7. The method of claim 1 , further comprising applying mechanical force to the interface with the first and second welding electrodes.
8. A joined sputtering target comprising a sputtering material that comprises an alloy or mixture of first and second constituent materials, the joined sputtering target comprising:
first and second discrete sputtering-target tiles joined at an interface therebetween, the first and second tiles each comprising the sputtering material, wherein, at the interface, each of the first and second tiles comprises both (i) regions consisting essentially of the first constituent material and (ii) regions consisting essentially of the second constituent material,
wherein across an entirety of the interface, (i) regions of the first tile consisting essentially of the first constituent material are bonded to regions of the second tile consisting essentially of the first constituent material, (ii) regions of the first tile consisting essentially of the first constituent material are bonded to regions of the second tile consisting essentially of the second constituent material, (iii) regions of the first tile consisting essentially of the second constituent material are bonded to regions of the second tile consisting essentially of the first constituent material, and (iv) no regions of the first tile consisting essentially of the second constituent material are bonded to regions of the second tile consisting essentially of the second constituent material.
9. The joined sputtering target of claim 8 , wherein each of the two tiles is curved so as to define at least a portion of a tube.
10. The method of claim 1 , further comprising, after forming the joined sputtering target, annealing the joined sputtering target at a temperature selected from the range of approximately 480° C. to approximately 1425° C.
11. The joined sputtering target of claim 8 , further comprising a backing plate on which the joined sputtering target is disposed.
12. The method of claim 1 , further comprising, after forming the joined sputtering target, heat treating the joined sputtering target at least proximate the interface.
13. The joined sputtering target of claim 8 , wherein at least a portion of the interface defines a plane that is not perpendicular to any of (i) a top surface of the first tile, (ii) a bottom surface of the first tile, (iii) a top surface of the second tile, and (iv) a bottom surface of the second tile.
14. The joined sputtering target of claim 8 , wherein each of the two tiles is substantially planar, and the joined sputtering target is substantially planar.
15. The joined sputtering target of claim 8 , wherein bonded regions are at least one of partially melted or partially interdiffused.
16. The joined sputtering target of claim 8 , wherein the first constituent material comprises Ti and the second constituent material comprises Mo.
17. The joined sputtering target of claim 8 , wherein the first and second tiles each consist essentially of the sputtering material.
18. The joined sputtering target of claim 8 , wherein the first constituent material comprises Ti and the second constituent material comprises W.
19. The joined sputtering target of claim 8 , wherein the first constituent material comprises Cu and the second constituent material comprises W.
20. The joined sputtering target of claim 8 , wherein at least a portion of the interface defines an interlocking joint between the first and second tiles.
21. The joined sputtering target of claim 8 , further comprising a layer of unmelted powder disposed over at least one of the first or second tiles proximate the interface.
22. The joined sputtering target of claim 21 , wherein the layer of unmelted metal powder consists essentially of the first and second constituent materials.
23. The joined sputtering target of claim 8 , wherein:
along the entirety of the interface, each unbonded area is surrounded by bonded areas,
each unbonded area comprises a region of the first tile consisting essentially of the second constituent material abutting a region of the second tile consisting essentially of the second constituent material, and
each bonded area comprises regions of the first tile bonded to regions of the second tile.