Method for forming pattern, and polysiloxane composition
A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.
1. A pattern-forming method comprising:
(1) providing a silicon-containing film on an upper face side of a substrate to be processed using a polysiloxane composition;
(2) forming a resist pattern on the silicon-containing film;
(3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and
(4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern,
wherein the polysiloxane composition comprises:
(A) a polysiloxane comprising a fluorine atom;
(B) a crosslinking accelerator; and
(C) water,
wherein the polysiloxane (A) comprises a fluorinated hydrocarbon group which may be substituted, and the fluorinated hydrocarbon group which may be substituted is a fluorinated alkyl group, a fluorinated alicyclic hydrocarbon group, a pentafluorophenyl group, a fluorinated aryl group other than a fluorinated phenyl group, or a fluorinated aralkyl group, and
wherein the crosslinking accelerator (B) is a nitrogen-containing compound which generates a compound having a basic amino group by heating.
2. The pattern-forming method according to claim 1 , wherein the step (2) further comprises:
(2-A1) providing a resist film on the silicon-containing film using a resist composition;
(2-A2) exposing the resist film by irradiation with an exposure light through a photomask; and
(2-A3) developing the exposed resist film.
3. The pattern-forming method according to claim 1 , further comprising:
(0) providing a resist underlayer film that is an organic film on the substrate to be processed, wherein
the silicon-containing film is provided on the resist underlayer film in the step (1), and
the resist underlayer film is further dry-etched in the step (4).
4. The pattern-forming method according to claim 1 , wherein the polysiloxane (A) is a hydrolytic condensation product of a compound that includes a silane compound represented by formula (1):
R 1 a R 2 b SiX 4-a-b (1)
wherein, in the formula (1), R 1 represents a monovalent hydrocarbon group having a fluorine atom, wherein a part or all of hydrogen atoms contained in the hydrocarbon group may be substituted; R 2 represents a hydrogen atom or a monovalent hydrocarbon group, wherein the hydrocarbon group may be substituted with a group which is other than a fluorine atom and which is other than a group having a fluorine atom; X represents a halogen atom or —OR 3 , wherein R 3 represents a monovalent organic group; a is an integer of 1 to 3; and b is an integer of 0 to 2, wherein (a+b)≦3 is satisfied, and in the case in which R 1 , R 2 and X are each present in a plurality of number, the R 1 s, R 2 s and Xs present in a plurality of number may be each the same or different.
5. The pattern-forming method according to claim 1 , wherein a content of the polysiloxane (A) is no less than 70% by mass based on a total solid content of the polysiloxane composition.
6. The pattern-forming method according to claim 1 , wherein a content of the polysiloxane (A) is no less than 80% by mass based on a total solid content of the polysiloxane composition.
7. The pattern-forming method according to claim 1 , wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.01 parts by mass to 10 parts by mass with respect to 100 parts by mass of the polysiloxane (A).
8. The pattern-forming method according to claim 1 , wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.05 parts by mass to 6 parts by mass with respect to 100 parts by mass of the polysiloxane (A).
9. The pattern-forming method according to claim 1 , wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.2 parts by mass to 5 parts by mass with respect to 100 parts by mass of the polysiloxane (A).
10. The pattern-forming method according to claim 1 , wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.5 parts by mass to 4 parts by mass with respect to 100 parts by mass of the polysiloxane (A).
11. The pattern-forming method according to claim 1 , wherein the polysiloxane composition further comprises a solvent.
12. The pattern-forming method according to claim 1 wherein a content of the water (C) in the polysiloxane composition is 0.1% by mass to 20% by mass.
13. The pattern-forming method according to claim 1 , wherein a content of the water (C) in the polysiloxane composition is 0.2% by mass to 15% by mass.