Method for producing semiconductor device
A method for producing a semiconductor device, including a semiconductor chip, for improving production efficiency and the flexibility of production design is provided. The method comprises: preparing a semiconductor chip having a first main surface on which an electroconductive member is formed; preparing a supporting structure in which, over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order; arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of the semiconductor chips opposite to the first main surface; laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips; and curing the radiation curable pressure-sensitive adhesive layer by irradiating from the support side to peel the radiation curable pressure-sensitive adhesive layer from the first thermosetting resin layer.
1. A method for producing a semiconductor device including a semiconductor chip, comprising:
preparing semiconductor chips, each having a first main surface on which an electroconductive member is formed;
preparing a supporting structure in which over a support configured to transmit radiation, a radiation curable pressure-sensitive adhesive layer and a first thermosetting resin layer are laminated in this order;
arranging the semiconductor chips on the first thermosetting resin layer to face the first thermosetting resin layer to a second main surface of each of the semiconductor chips that is opposite to the first main surface thereof;
laminating a second thermosetting resin layer over the first thermosetting resin layer to cover the semiconductor chips;
exposing an electroconductive member outward from a surface of the second thermosetting resin layer after the laminating of the second thermosetting resin layer and before a peeling of the radiation curable pressure-sensitive adhesive layer; and
curing the radiation curable pressure-sensitive adhesive layer by irradiating from a support side to peel the radiation curable pressure-sensitive adhesive layer and the first thermosetting resin layer from each other.
2. The method for producing a semiconductor device according to claim 1 , wherein the first thermosetting resin layer has a lowest melt viscosity of 5×10 2 Pa·s or more and 1×10 4 Pa·s or less at a temperature of 50 to 200° C.
3. The method for producing a semiconductor device according to claim 1 , wherein the second thermosetting resin layer is a sheet-like thermosetting resin layer.
4. The method for producing a semiconductor device according to claim 3 , wherein the second thermosetting resin layer comprises an epoxy resin, a phenolic resin, a filler, and an elastomer.
5. The method for producing a semiconductor device according to claim 1 , further comprising, after the peeling of the radiation curable pressure-sensitive adhesive layer, exposing the electroconductive member outward from the surface of the second thermosetting resin layer.
6. The method for producing a semiconductor device according to claim 1 , further comprising forming a rewire connected to the exposed electroconductive member on the second thermosetting resin layer.
7. The method for producing a semiconductor device according to claim 5 , further comprising forming a rewire connected to the exposed electroconductive member on the second thermosetting resin layer.