LED Device with Embedded Top Electrode

1 - 20 . (canceled)

21 . A light emitting diode (LED) device comprising:

an active light-emitting layer;

a top contact layer having a top surface formed over the active light-emitting layer; and

a first top electrode at least partially embedded in the top contact and having a non-conductive bottommost surface, wherein the first top electrode electrically contacts the top contact layer.

22 . The LED device of claim 21 , wherein the first top electrode comprises a metal, a metal alloy, a conductive material, or combinations thereof.

23 . The LED device of claim 22 , wherein the conductive material is transparent.

24 . The LED device of claim 21 , wherein the top contact layer includes a transparent conductive material and the first top electrode includes a metal material.

25 . The LED device of claim 21 , further comprising:

a bottom electrode;

a buffer layer formed over the bottom electrode; and

a bottom contact layer formed over the buffer layer, wherein the active light-emitting layer is formed over the bottom electrode, the buffer layer, and the bottom contact layer.

26 . The LED device of claim 25 , wherein the buffer layer is reflective.

27 . The LED device of claim 21 , further comprising a conductive web connecting the first top electrode and a second top electrode in the top contact layer.

28 . The LED device of claim 27 , wherein the conductive web comprises a metal, a metal alloy, a conductive material, or combinations thereof.

29 . A method of forming a light emitting diode (LED) device, the method comprising:

forming an active light-emitting layer over a substrate;

forming a top contact layer over the active light-emitting layer;

patterning the top contact layer to form a first trench therein;

forming a top electrode within the first trench, wherein the top electrode has a non-conductive bottommost surface.

30 . The method of claim 29 , wherein the top electrode comprises a metal, a metal alloy, a conductive material, or combinations thereof.

31 . The method of claim 29 , wherein forming the top electrode within the first trench includes:

forming a dielectric material layer in the first trench; and

depositing a conductive material layer over the dielectric material layer in the first trench.

32 . The method of claim 29 , wherein patterning the top contact layer to form the first trench therein includes patterning the top contact layer to form a second trench therein.

33 . The method of claim 29 , wherein forming the top electrode within the first trench includes:

forming a dielectric material layer in the first trench and the second trench;

removing the dielectric material layer from the second trench; and

depositing a conductive material layer in the second trench and over the dielectric material layer in the first trench.

34 . The method of claim 29 further comprising:

forming a bottom electrode over the substrate;

forming a buffer layer over the bottom electrode; and

forming a bottom contact layer formed over the buffer layer, wherein the active light-emitting layer is formed over the bottom electrode, the buffer layer, and the bottom contact layer.

35 . A light emitting diode (LED) structure comprising:

a top contact layer; and

an electrode partially embedded in the top contact layer, wherein the electrode has a non-conductive bottommost surface.

36 . The LED structure of claim 35 , wherein the electrode comprises a metal, a metal alloy, a conductive material, or combinations thereof.

37 . The LED device of claim 35 , wherein the conductive material is transparent.

38 . The LED device of claim 35 , wherein the top contact layer includes a transparent conductive material and the first top electrode includes a metal material.

39 . The LED structure of claim 35 , wherein the electrode has a top surface that is non-coplanar with a top surface of the top contact layer.

40 . The LED structure of claim 39 , wherein the top surface of the electrode is recessed relative to the top surface of the top contact layer.