Semiconductor device
A semiconductor device in which a decrease in the yield by electrostatic destruction can be prevented is provided. A scan line driver circuit for supplying a signal for selecting a plurality of pixels to a scan line includes a shift register for generating the signal. One conductive film functioning as respective gate electrodes of a plurality of transistors in the shift register is divided into a plurality of conductive films. The divided conductive films are electrically connected to each other by a conductive film which is formed in a layer different from the divided conductive films are formed. The plurality of transistors includes a transistor on an output side of the shift register.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a fifth transistor,
wherein:
the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor have a same conductivity type;
one of a source and a drain of the first transistor is electrically connected to a first wiring;
the other of the source and the drain of the first transistor is electrically connected to a second wiring;
one of a source and a drain of the second transistor is electrically connected to the second wiring;
the other of the source and the drain of the second transistor is electrically connected to a third wiring;
one of a source and a drain of the third transistor is electrically connected to a fourth wiring;
the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor;
the other of the source and the drain of the fourth transistor is electrically connected to a fifth wiring;
one of a source and a drain of the fifth transistor is electrically connected to the fourth wiring;
the other of the source and the drain of the fifth transistor is electrically connected to a gate of the first transistor;
a first conductive layer is electrically connected to a third conductive layer through a second conductive layer;
the first conductive layer is configured to be the gate of the first transistor;
the third conductive layer is configured to be a gate of the third transistor; and
the second wiring is configured to transmit a signal being output from a circuit comprising the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor.
2. The semiconductor device according to claim 1 , wherein:
the second conductive layer and a fourth conductive layer are provided in a same layer; and
the fourth conductive layer is configured to be the one of the source and the drain of the first transistor.
3. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a fifth transistor,
wherein:
the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor have a same conductivity type;
one of a source and a drain of the first transistor is electrically connected to a first wiring;
the other of the source and the drain of the first transistor is electrically connected to a second wiring;
one of a source and a drain of the second transistor is electrically connected to the second wiring;
the other of the source and the drain of the second transistor is electrically connected to a third wiring;
one of a source and a drain of the third transistor is electrically connected to a fourth wiring;
the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor;
the other of the source and the drain of the fourth transistor is electrically connected to a fifth wiring;
one of a source and a drain of the fifth transistor is electrically connected to the fourth wiring;
the other of the source and the drain of the fifth transistor is electrically connected to a gate of the first transistor;
a first conductive layer is electrically connected to a third conductive layer through a second conductive layer;
the first conductive layer is configured to be the gate of the first transistor;
the third conductive layer is configured to be a gate of the third transistor;
the second wiring is configured to transmit a signal being output from a circuit comprising the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor; and
a ratio of a channel width of the first transistor to a channel length of the first transistor is larger than a ratio of a channel width of the third transistor to a channel length of the third transistor.
4. The semiconductor device according to claim 3 , wherein;
the second conductive layer and a fourth conductive layer are provided in a same layer; and
the fourth conductive layer is configured to be the one of the source and the drain of the first transistor.
5. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor; and
a fifth transistor,
wherein:
the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor have a same conductivity type;
one of a source and a drain of the first transistor is electrically connected to a first wiring;
the other of the source and the drain of the first transistor is electrically connected to a second wiring;
one of a source and a drain of the second transistor is electrically connected to the second wiring;
the other of the source and the drain of the second transistor is electrically connected to a third wiring;
one of a source and a drain of the third transistor is electrically connected to a fourth wiring;
the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor;
the other of the source and the drain of the fourth transistor is electrically connected to a fifth wiring;
one of a source and a drain of the fifth transistor is electrically connected to the fourth wiring;
the other of the source and the drain of the fifth transistor is electrically connected to a gate of the first transistor;
a first conductive layer is electrically connected to a third conductive layer through a second conductive layer;
the first conductive layer is configured to be the gate of the first transistor;
the third conductive layer is configured to be a gate of the third transistor;
the second wiring is configured to transmit a signal being output from a circuit comprising the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor; and
the first conductive layer is constantly electrically connected to the third conductive layer.
6. The semiconductor device according to claim 5 , wherein:
the second conductive layer and a fourth conductive layer are provided in a same layer; and
the fourth conductive layer is configured to be the one of the source and the drain of the first transistor.
7. A semiconductor device comprising:
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor; and
a seventh transistor,
wherein:
the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor have a same conductivity type;
one of a source and a drain of the first transistor is electrically connected to a first wiring;
the other of the source and the drain of the first transistor is electrically connected to a second wiring;
one of a source and a drain of the second transistor is electrically connected to the second wiring;
the other of the source and the drain of the second transistor is electrically connected to a third wiring;
one of a source and a drain of the third transistor is electrically connected to a fourth wiring;
the other of the source and the drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor;
the other of the source and the drain of the fourth transistor is electrically connected to a fifth wiring;
one of a source and a drain of the fifth transistor is electrically connected to the fourth wiring;
the other of the source and the drain of the fifth transistor is electrically connected to a gate of the first transistor;
one of a source and a drain of the sixth transistor is electrically connected to the fourth wiring;
the other of the source and the drain of the sixth transistor is electrically connected to one of a source and a drain of the seventh transistor;
a gate of the seventh transistor is electrically connected to the other of the source and the drain of the third transistor;
a first conductive layer is electrically connected to a third conductive layer through a second conductive layer;
the first conductive layer is configured to be the gate of the first transistor;
the third conductive layer is configured to be a gate of the third transistor;
the second wiring is configured to transmit a signal being output from a circuit comprising the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor; and
a ratio of a channel width of the first transistor to a channel length of the first transistor is larger than a ratio of a channel width of the third transistor to a channel length of the third transistor.
8. The semiconductor device according to claim 7 , wherein:
the second conductive layer and a fourth conductive layer are provided in a same layer; and
the fourth conductive layer is configured to be the one of the source and the drain of the first transistor.