Light-emitting device with heterophase boundaries
The invention relates to light-emitting devices; in particular, to highly effective light-emitting diodes on the base of nitrides of III group elements of the periodic system. The light-emitting device includes a substrate, a buffer layer formed on the substrate, a first layer from n-type semiconductor formed on the buffer layer, a second layer from p-type semiconductor and an active layer arranged between the first and second layers. The first, second and active layers form interlacing of the layers with zinc blend phase structure and layers with wurtzite phase structure forming heterophase boundaries therebetween. Technical result of the invention is increasing the effectiveness (efficiency) of the light-emitting device at the expense of heterophase boundaries available in the light-emitting device which allow to eliminate formation of the potential wells for holes, to increase the uniformity of the hole distribution in the active layer and to ensure suppression of nonradiative Auger recombination.
1. A light-emitting device comprising:
a substrate;
a buffer layer formed on the substrate;
a first layer made from n-type semiconductor formed on the buffer layer;
a second layer made from p-type semiconductor;
an active layer arranged between the first and second layers,
wherein the first, the second and the active layers form interlacing of the layers with a zinc blende phase structure and the layers with a wurtzite phase structure forming heterophase boundaries therebetween, wherein the active layer is made from a III-nitride semiconductor with the zinc blende phase structure, the first and second layers are made from a semiconductor with the wurtzite phase structure.
2. The light-emitting device according to claim 1 , wherein the substrate is made from aluminum oxide.
3. The light-emitting device according to claim 1 , wherein the substrate is made from silicon carbide.
4. The light-emitting device according to claim 1 , wherein the substrate is made from gallium nitride.
5. The light-emitting device according to claim 1 , wherein the buffer layer is made from gallium nitride.
6. The light-emitting device according to claim 1 , wherein the buffer layer is made from aluminum nitride.
7. The light-emitting device according to claim 1 , wherein the first layer is made from gallium nitride doped with silicon.
8. The light-emitting device according to claim 1 , wherein the second layer is made from gallium nitride doped with magnesium.
9. The light-emitting device according to claim 1 , wherein the active layer is made from gallium nitride (GaN) or of the solid solution of boron-aluminum-gallium-indium nitride (B x Al y Ga z In 1-z N).
10. The light-emitting device according to claim 1 , wherein the active layer is made composite comprising the layers from the semiconductor with the zinc blende phase structure and barriers with the wurtzite phase structure arranged therebetween forming the heterophase boundaries.