DNA-decorated graphene chemical sensors
The present invention provides a broad response single-stranded DNA-graphene chemical sensor device. The present invention also provides methods for improving the ability of graphene to work as a chemical sensor by using single-stranded DNA as a sensitizing agent.
1. A molecular sensor device, comprising:
an insulator thin-film disposed directly adjacent to a back-gate substrate;
at least one positive electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate;
at least one negative electrode disposed directly adjacent to said insulator thin-film, opposite to said back-gate substrate;
clean graphene disposed between, and in electrical communication with, said positive and negative electrodes, wherein the clean graphene is functionalized with a nucleic acid, and wherein the clean graphene is substantially single-atom thick graphene.
2. The device of claim 1 , wherein said insulator thin-film has a thickness of from about 10 nm to about 1000 nm, covering an area of from about 400 nm 2 to covering the entire substrate.
3. The device of claim 1 , wherein said insulator thin-film is comprised of silicon dioxide, silicon oxide, hafnium oxide, aluminum oxide, titanium dioxide, titanium oxide, or insulating polymer.
4. The device of claim 1 , wherein said back-gate substrate has a thickness of from about 0.01 mm to about 1 mm, and covers an area of from about 10 mm 2 to about 1000 mm 2 .
5. The device of claim 1 , wherein said back-gate substrate is silicon, doped silicon, gallium arsenide, gold, aluminum, or conducting polymer.
6. The device of claim 1 , wherein said substrate is p-doped or n-doped with 300 nm thermal oxide.
7. The device of claim 1 , wherein said electrodes are comprised of aluminum, chrome, gold palladium, platinum, titanium, titanium nitride, copper, graphene, or conducting polymer.
8. The device of claim 1 , wherein the distance between electrodes is from about 10 nm to about 10 μm.
9. The device of claim 1 , wherein said clean graphene covers from at least a portion of said device to the entire substrate.
10. The device of claim 9 , wherein said clean graphene covers from at least 400 nm 2 to the entire substrate.
11. The device of claim 1 , wherein said nucleic acid comprises single-stranded DNA.
12. The device of claim 1 , capable of operating using a voltage of from about 1 mV to about 1 V, with gate voltages between −100 V to 100 V.
13. The device of claim 1 , having a hole mobility from 500 cm 2 /V·s to 200,000 cm 2 /V·s.
14. The device of claim 13 , having a hole mobility from 500 cm 2 /V·s to 5000 cm 2 /V·s.
15. The device of claim 13 , having a hole mobility from 1600 cm 2 /V·s to 5000 cm 2 /V·s.
16. The device of claim 1 , having a doped charge carrier density from about 0 to about 1×10 15 /cm 2 at zero gate voltage.
17. The device of claim 11 , wherein the current response of the functionalized clean grapheme is increased 5-50% relative to non-functionalized clean graphene.