Method for preparing a diorganodihalosilane
View Patent ↗A method of preparing a diorganodihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with a mixture comprising hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst is selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, calcium, cesium, tin, and sulfur; and (ii) contacting the silicon-containing copper catalyst with an organohalide at a temperature of from 100 to 600° C. to form at least one diorganodihalosilane.
1. A method of preparing a diorganodihalosilane, the method comprising the following separate and consecutive steps:
(i) contacting a copper catalyst with a mixture comprising hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising from 1 to 5% (w/w) of silicon, wherein the copper catalyst is selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, calcium, cesium, tin, and sulfur; and
(ii) contacting the silicon-containing copper catalyst with an organohalide at a temperature of from 100 to 600° C. to form at least one diorganodihalosilane.
2. The method according to claim 1 , further comprising (iii) contacting the silicon-containing copper catalyst contacted with the organohalide in step (ii) with the mixture comprising hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to reform the silicon containing copper catalyst comprising at least 0.1% (w/w) silicon; and (iv) contacting the reformed silicon-containing copper catalyst with the organohalide at a temperature of from 100 to 600° C. to form at least one diorganodihalosilane.
3. The method according to claim 2 , further comprising repeating steps (iii) and (iv) at least 1 time.
4. The method according to claim 2 , further comprising purging prior to the contacting of the reformed silicon-containing copper catalyst with the organohalide in step (iv).
5. The method according to claim 4 , wherein the purging is conducted with argon or silicon tetrachloride.
6. The method according to claim 1 , further comprising purging prior to contacting the silicon-containing copper catalyst with the organohalide in step (ii).
7. The method according to claim 6 , wherein the purging is conducted with argon or silicon tetrachloride.
8. The method according claim 1 , wherein the copper catalyst is supported.
9. A method of preparing a diorganodihalosilane, the method comprising the following separate and consecutive steps:
(i) contacting a copper catalyst with a mixture comprising hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising, from 1 to 5% (w/w) of silicon wherein the copper catalyst comprises from 0.1 to 35% (w/w) of a mixture and the mixture comprises copper, gold and magnesium, and
(ii) contacting the silicon-containing copper catalyst with an organohalide at a temperature of from 100 to 600° C. to form at least one diorganodihalosilane.
10. The method according to claim 8 , wherein the support is activated carbon.
11. The method according to claim 1 , wherein mole ratio of hydrogen to silicon tetrahalide is from 20:1 to 5:1.
12. The method according to claim 1 , wherein the silicon tetrahalide is silicon tetrachloride.
13. The method according to claim 1 , wherein the organohalide has formula Rx, where R is C 1 -C 10 alkyl or C 4 -C 10 cycloalkyl and X is fluoro, chloro, bromo, or iodo.
14. The method of claim 13 , wherein R is methyl and X is chloro.
15. The method according to claim 1 , wherein the contacting in (ii) is in the absence of hydrogen.
16. The method according to claim 1 , wherein the diorganodihalosilane has the formula R 2 SiX 2 , where R is C 1 -C 10 alkyl or C 4 -C 10 cycloalkyl and X is fluoro, chloro, bromo, or iodo.
17. The method according to claim 16 , wherein R is methyl and X is chloro.
18. The method according to claim 1 , further comprising recovering the diorganodihalosilane.
19. The method according to claim 1 , wherein the residence time of the hydrogen and silicon tetrahalide is from 0.5 to 10 s and the residence time of the organohalide is from 1 to 10 s.