IP Library › Patent Application 13642525
Patent Application
App. No. 13/642,525

COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL

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Quick Facts
Patent No.
US None
App. No.
13/642,525
Abstract

The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Claims (13)

1 . A composition for forming an n-type diffusion layer, the composition comprising a glass powder and a dispersion medium, wherein the glass powder includes a donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less.

2 . The composition for forming an n-type diffusion layer according to claim 1 , wherein the donor element is at least one selected from phosphorous (P) or antimony (Sb).

3 . The composition for forming an n-type diffusion layer according to claim 1 , wherein the glass powder comprises at least one donor element-containing material selected from P 2 O 3 , P 2 O 5 or Sb 2 O 3 , and at least one glass component material selected from SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, SnO, ZrO 2 or MoO 3 .

4 . The composition for forming an n-type diffusion layer according to claim 1 , further comprising a metal element that is crystallized upon reacting with the glass powder.

5 . The composition for forming an n-type diffusion layer according to claim 4 , wherein the metal element that is crystallized upon reacting with the glass powder is at least one selected from silver (Ag), silicon (Si) or zinc (Zn).

6 . The composition for forming an n-type diffusion layer according to claim 1 , wherein the life time killer element is at least one selected from iron (Fe), copper (Cu), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W) or gold (Au).

7 . A method of forming an n-type diffusion layer, the method comprising:

applying the composition for forming an n-type diffusion layer of claim 1 ; and

conducting a thermal diffusion treatment.

8 . A method of producing a photovoltaic cell, the method comprising:

applying, on a semiconductor substrate, the composition for forming an n-type diffusion layer of claim 1 ;

conducting a thermal diffusion treatment to form an n-type diffusion layer; and

forming an electrode on the n-type diffusion layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2012
From: MACHII, YOICHI; YOSHIDA, MASATO; NOJIRI, TAKEISHI; OKANIWA, KAORU; IWAMURO, MITSUNORI; ADACHI, SHUICHIRO; SATO, TETSUYA; KIZAWA, KEIKO
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 029370/0561 →