Compound semiconductor light-emitting element

1. A compound semiconductor light-emitting element, comprising:

a frame;

an adhesive provided on the frame;

a light-emitting part which is secured in position on the frame by means of the adhesive and which includes a substrate, a first compound semiconductor layer formed on the substrate and having a first type of conductivity, a second compound semiconductor layer having a second type of conductivity that is different from the first type of conductivity, and an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer to generate light via electron-hole recombination; and

a spacer disposed between the light-emitting part and the frame to create a gap therebetween.

2. The compound semiconductor light-emitting element of claim 1 , wherein the spacer is bonded to the adhesive, and a spacing between the frame and the bottom surface of the substrate is equal to or larger than the height of the adhesive from the frame.

3. The compound semiconductor light-emitting element of claim 2 , wherein the spacer comprises a plating layer.

4. The compound semiconductor light-emitting element of claim 3 , wherein the spacer has a thickness of 20 μm to 80 μm.

5. The compound semiconductor light-emitting element of claim 1 , further comprising a light reflective layer disposed between the light-emitting part and the spacer to reflect light.

6. The compound semiconductor light-emitting element of claim 5 , wherein the light reflective layer is formed on the bottom surface of the substrate, and the compound semiconductor light-emitting element further comprises:

a dielectric substance layer formed between the bottom surface of the substrate and the light reflective layer;

an n-side electrode formed on the first compound semiconductor layer exposed by etching the second compound semiconductor layer and the active layer;

a light-transmissive current spreading electrode formed on the second compound semiconductor layer; and

a p-side pad electrode formed on the current spreading electrode.

7. The compound semiconductor light-emitting element of claim 6 , wherein the substrate is a sapphire substrate, the spacer comprises a plating layer formed on the bottom surface of the light reflective layer, the first compound semiconductor layer comprises an n-type III-nitride semiconductor layer, and the second compound semiconductor layer comprises a p-type III-nitride semiconductor layer.

8. The compound semiconductor light-emitting element of claim 5 , wherein the light reflective layer comprises an n-side electrode formed on the bottom surface of the substrate, and the spacer comprises a plating layer formed on the bottom surface of the light reflective layer.

9. The compound semiconductor light-emitting element of claim 1 , wherein the second compound semiconductor layer is disposed between the spacer and the active layer, and the compound semiconductor light-emitting element further comprises:

a light-reflective current spread electrode disposed between the spacer and the second compound semiconductor layer; and

an n-side electrode electrically connected to the first compound semiconductor layer.

10. The compound semiconductor light-emitting element of claim 9 , wherein a hole is formed that leads from the bottom surface of the substrate to the first compound semiconductor layer, and the n-side electrode is formed on the first compound semiconductor layer, which is exposed by etching the second compound semiconductor layer and the active layer, and extended to the bottom surface of the substrate through the hole.