Methods and compositions for doping silicon substrates with molecular monolayers
Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.
1. A method of preparing a doped Si surface, comprising:
a) cleaning a Si surface to remove oxides; and
b) contacting the cleaned Si surface with a dilute dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant material effective for doping a Si surface,
wherein said contacting is for a time and at a temperature effective to form a layer of dopant material on the surface, and
wherein said dopant comprises material from Group III of the Periodic Table, Group V of the Periodic Table or a combination thereof.
2. The method of claim 1 wherein the dopant comprises arsenic or gallium.
3. The method of claim 1 wherein the method further includes the step of applying a capping layer to the doped area.
4. The method of claim 3 wherein the method further includes the step of diffusing the dopant into the Si surface by annealing the treated Si substrate.
5. The method of claim 1 wherein said dilute dopant solution comprises an additional solvent in addition to tetraethylene glycol dimethyl ether.
6. A method of doping a Si surface, comprising:
a) cleaning a Si surface to remove oxides;
b) contacting the cleaned Si surface with a dilute dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant material effective for doping a Si surface, and
c) applying a capping layer to the doped area; and d) diffusing the dopant into the Si surface by annealing the treated Si substrate,
wherein said contacting is for a time and at a temperature effective to form a layer of dopant material on the surface, and
wherein said dopant comprises material from Group III of the Periodic Table, Group V of the Periodic Table or a combination thereof.
7. The method of claim 6 wherein the method additionally includes the step of treating the cleaned Si surface with 3-methyl-3-methoxybutanol prior to contacting with the dilute dopant solution.
8. The method of claim 6 wherein said dopant material is provided in an amount of between 1% and 20%.
9. The method of claim 6 wherein said dopant material is provided in an amount of 4% or less.
10. The method of claim 6 wherein said dopant comprises arsenic or gallium.
11. A method of preparing a doped Si surface, comprising:
a) cleaning a Si surface to remove oxides; and
b) contacting the cleaned Si surface with a dilute dopant solution comprising:
i) at least one solvent selected from the group consisting of tetraethylene glycol dimethyl ether, triethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dimethylsulfoxide, dimethylsulfone, N-methylpyrrolidone, 1 formyl piperidine, Isopar M, ethanolamine, diethanolamine, triethanolamine, linoleic acid, oleic acid, palmitoleic acid, safflower oil, grape seed oil, poppyseed oil, sunflower oil, hemp oil, corn oil, wheat germ oil, cottonseed oil, soybean oil, walnut oil, sesame oil, rice bran oil, pistachio oil, peanut oil, canola oil, chicken fat, egg yolk, linseed oil, lard, olive oil, palm oil, cocoa butter, macadamia oil, butter, and coconut oil; and
ii) a dopant material comprising material from Group III of the Periodic Table, Group V of the Periodic Table or a combination thereof,
wherein said contacting is for a time and at a temperature effective to form a layer of dopant material on the surface.
12. The method according to claim 11 , wherein the dopant comprises arsenic or gallium.
13. The method of claim 11 wherein the method further includes the step of applying a capping layer to the doped area.
14. The method of claim 13 wherein the method further includes the step of diffusing the dopant into the Si surface by annealing the treated Si substrate.
15. The method of claim 11 wherein the method additionally includes the step of treating the cleaned Si surface with 3-methyl-3-methoxybutanol prior to contacting with the dilute dopant solution.
16. The method of claim 11 wherein said solvent is tetraethylene glycol dimethyl ether.
17. The method of claim 11 wherein said solvent includes tetraethylene glycol dimethyl ether and a secondary solvent selected from the group consisting of triethylene glycol dimethyl ether, diethylene glycol dimethyl ether, dimethylsulfoxide, dimethylsulfone, N-methylpyrrolidone, 1 formyl piperidine, Isopar M, ethanolamine, diethanolamine, triethanolamine, linoleic acid, oleic acid, palmitoleic acid, safflower oil, grape seed oil, poppyseed oil, sunflower oil, hemp oil, corn oil, wheat germ oil, cottonseed oil, soybean oil, walnut oil, sesame oil, rice bran oil, pistachio oil, peanut oil, canola oil, chicken fat, egg yolk, linseed oil, lard, olive oil, palm oil, cocoa butter, macadamia oil, butter, and coconut oil.
18. The method of claim 11 wherein said dopant material is provided in an amount of between 1% and 20%.
19. The method of claim 11 wherein said dopant material is provided in an amount of 4% or less.