Plasma Etch Resistant Films, Articles Bearing Plasma Etch Resistant Films and Related Methods
The invention includes a plasma etch-resistant film for a substrate comprising a yttria material wherein at least a portion of the yttria material is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material is in a form of a monoclinic crystal system. The film may be treated by exposure to a fluorine gas plasma. Also included are plasma etch-resistant articles that include a substrate and a film, wherein the film comprises an yttria material and at least a portion of the yttria material is present in the film in a crystal phase having a crystal lattice structure and at least 50% of the yttria material is in a form of a monoclinic crystal system. Several methods are contemplated within the scope of the invention.
1 . A plasma etch-resistant film for a substrate comprising a yttria material wherein at
least a portion of the yttria material is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material is in a form of a monoclinic crystal system.
2 . The film of claim 1 , wherein at least 60% of the yttria material is in a form of a monoclinic crystal system.
3 . The film of claim 1 , wherein at least 65% of the yttria material is in a form of a monoclinic crystal system.
4 . The film of claim 1 , wherein at least 70% of the yttria material is in a form of a monoclinic crystal system.
5 . The film of claim 1 , wherein at least 75% of the yttria material is in a form of a monoclinic crystal system.
6 . The film of claim 1 , wherein at least 80% of the yttria material is in a form of a monoclinic crystal system.
7 . The film of claim 1 , wherein at least 85% of the yttria material is in a form of a monoclinic crystal system.
8 . The film of claim 1 , wherein at least 90% of the yttria material is in a form of a monoclinic crystal system.
9 . The film of claim 1 , wherein a portion of the yttria material that is not in a form of a monoclinic crystal system, is a form chosen from one or more of an isomeric crystal system, a hexagonal crystal system, a tetragonal crystal system, an orthorhombic crystal system, and a triclinic crystal system.
10 . The film claim 1 , wherein the substrate is chosen from silica, fused silica, quartz, fused quartz, alumina, and sapphire.
11 . The film of claim 1 , wherein the substrate is chosen from silicon, silicon carbide, silicon nitride, aluminum, anodized aluminum, zirconium oxide, and aluminum alloy.
12 . The film of claim 1 , wherein the film has a thickness of about 0.1 microns to about 30 microns.
13 . The film of claim 1 , wherein the film has a thickness of about 0.5 micron to about 25 microns.
14 . The film of claim 1 , wherein the film has a thickness of about 1 micron to about 5 microns.
15 . The film of claim 1 , wherein the yttria material is yttria.
16 . The film of claim 1 , wherein the yttria material is an yttria-derived composite.
17 . The film of claim 1 , wherein the film is formed using a process chosen from a physical vapor deposition (PVD) process, an evaporation deposition process, an electron beam vapor deposition process, a sputter deposition process, an arc vapor deposition process, and an ion plating process.
18 . The film of claim 1 , wherein the film is formed using a chemical vapor deposition (CVD) process, an atmospheric pressure CVD (APCVD) process, a low-pressure CVD (LPCVD) process, an aerosol assisted CVD (AACVD) process, a plasma enhanced CVD (PECVD) process, an atomic layer CVD (ALCVD or ALD) process, a metalorganic CVD (MOCVD) process, and an initiated CVD (iCVD) process.
19 . The film of claim 1 , wherein the substrate is a semiconductor processing apparatus component.
20 . (canceled)
21 . The film of claim 1 , wherein the film is formed by a process that comprises heating the substrate to a temperature of about 21° C. to about 500° C. when the film is deposited.
22 . The film of claim 1 , wherein the film has been exposed to a fluorine gas plasma.
23 . A plasma etch-resistant article comprising a substrate and a film, wherein the film comprises an yttria material and at least a portion of the yttria material is present in the film in a crystal phase having a crystal lattice structure and at least 50% of the yttria material is in a form of a monoclinic crystal system.
24 . The article of claim 23 , wherein the film has been exposed to a fluorine gas plasma.
25 . A method of manufacturing an article comprising depositing an yttria material on a substrate to form a film, wherein the film comprises the yttria material and at least a portion of the yttria material present in the film is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material present in the film is in a form of a monoclinic crystal system.
26 .- 37 . (canceled)
38 . A method of increasing the plasma etch resistance of a substrate comprising depositing a yttria material on the substrate to form a film on the surface(s) of the substrate, wherein the film comprises the yttria material and at least a portion of the yttria material present in the film is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material present in the film is in a form of a monoclinic crystal system.
39 .- 50 . (canceled)
51 . The method of claim 38 , further comprising exposing the film to a fluorine gas plasma.
52 . The method of claim 51 wherein the film is exposed for at least about 4 hours.
53 . The method of claim 51 , wherein the exposure is effectuated using a process chosen from remote plasma exposure and reactive ion etch treatment.
54 . A method of manufacturing a plasma resistant film having increased fracture toughness on a substrate comprising depositing a yttria material on the substrate to form a film on the surface(s) of the substrate, wherein the film comprises the yttria material and at least a portion of the yttria material present in the film is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material present in the film is in a form of a monoclinic crystal system, and exposing the film to a fluorine gas plasma.
55 .- 65 . (canceled)