Semiconductor device and method of manufacturing the same
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A semiconductor device comprising:
a wiring substrate having a first surface and a second surface opposite to the first surface, and including a plurality of insulating layers stacked with one another, each insulating layer having a thorough hole, conductive wiring, and glass cloths;
a semiconductor chip comprising a silicon substrate having a third surface and a fourth surface opposite to the third surface, semiconductor elements on the third surface, a silicon oxide film covering the semiconductor elements, an interlayer insulating film over the silicon oxide film, pad electrodes over the interlayer insulating film, and internal wiring layers electrically connecting the semiconductor elements with the pad electrodes, the interlayer insulating film having an electrical constant lower than that of the silicon oxide film,
the semiconductor chip being mounted on the wiring substrate via first bump electrodes such that the third surface of the silicon substrate faces the first surface of the wiring substrate and the pad electrodes of the semiconductor chip are electrically connected with the conductive wiring of a first one of the plurality of insulating layers via the first bump electrodes;
a resin layer between the semiconductor chip and the first one of insulating substrates and between the first bump electrodes; and
second bump electrodes being on the second surface of the wiring substrate, and being electrically connected with conductive wiring of a second one of the plurality of insulating layers.
2. The semiconductor device according to claim 1 , wherein the plurality of insulating layers have the same thickness as each other.
3. The semiconductor device according to claim 1 , wherein the interlayer insulating film is a porous film.
4. The semiconductor device according to claim 3 , wherein the interlayer insulating film includes at least one of SiOC and SiOF films.
5. The semiconductor device according to claim 1 , wherein each first bump electrode is a lead free solder bump.
6. The semiconductor device according to claim 1 , wherein
each pad electrode comprises an aluminum layer, and
each internal wiring layer comprises a Cu layer.