Semiconductor structure having contact plug and metal gate transistor and method of making the same
The present invention provides a semiconductor structure including at least a contact plug. The structure includes a substrate, a transistor, a first ILD layer, a second ILD layer and a first contact plug. The transistor is disposed on the substrate and includes a gate and a source/drain region. The first ILD layer is disposed on the transistor and levels with a top surface of the gate. The second ILD layer is disposed on the first ILD layer. The first contact plug is disposed in the first ILD layer and the second ILD layer and includes a first trench portion and a first via portion, wherein a boundary of the first trench portion and a first via portion is higher than the top surface of the gate. The present invention further provides a method of making the same.
1. A semiconductor structure having at least a contact plug, comprise:
a transistor disposed on a substrate, wherein the transistor comprises a gate and a source/drain region;
a first inter-layer dielectric (ILD) layer disposed on the transistor and level with a top surface of the gate;
a second ILD layer disposed on the first ILD layer; and
a first contact plug disposed in and directly contacting both the first ILD layer and the second ILD layer, wherein the first contact plug comprises a first trench portion and a first via portion, a boundary of the first trench portion and the first via portion is higher than the top surface of the gate and located in the second ILD layer, and a portion of the second ILD layer is disposed between the boundary of the first trench portion and the first via portion and a top surface of the first ILD layer.
2. The semiconductor structure having at least a contact plug as in claim 1 , wherein the first contact plug comprises a first barrier layer and a first metal layer, wherein the first barrier layer is disposed on a surface of the first trench portion and the first via portion.
3. The semiconductor structure having at least a contact plug as in claim 2 , wherein the first metal layer comprises tungsten.
4. The semiconductor structure having at least a contact plug as in claim 1 , wherein the first contact plug electrically connects the source/drain region of the transistor.
5. The semiconductor structure having at least a contact plug as in claim 4 , wherein the transistor further comprises a silicide layer disposed between the first contact plug and the source/drain region.
6. The semiconductor structure having at least a contact plug as in claim 5 , wherein the silicide layer corresponds to the first contact plug.
7. The semiconductor structure having at least a contact plug as in claim 1 , further comprising a second contact plug disposed in the second ILD layer and electrically connected to the gate.
8. The semiconductor structure having at least a contact plug as in claim 7 , wherein the second contact plug comprises a second trench portion and a second via portion.
9. The semiconductor structure having at least a contact plug as in claim 7 , wherein the second contact plug comprises copper.
10. A method of forming a semiconductor structure having at least a contact plug, comprises:
providing a substrate;
forming a transistor and a first ILD layer on the substrate, wherein the first ILD layer is level with a top surface of a gate of the transistor to expose the gate;
forming a second ILD layer on the first ILD layer; and
after forming the second ILD layer, forming a first contact plug in the second ILD layer and the first ILD layer to electrically connect a source/drain region of the transistor, wherein the step of forming the first contact plug comprises a first dual damascene process, and a portion of the second ILD layer is disposed between the first contact plug and a top surface of the first ILD layer.
11. The method of forming a semiconductor structure having at least a contact plug as in claim 10 , wherein the first dual damascene process comprises:
forming a first trench;
forming a first via; and
filling the first trench and the first via with a first metal layer.
12. The method of forming a semiconductor structure having at least a contact plug as in claim 11 , wherein the first metal layer comprises tungsten.
13. The method of forming a semiconductor structure having at least a contact plug as in claim 11 , wherein the first trench is formed before the first via is formed.
14. The method of forming a semiconductor structure having at least a contact plug as in claim 11 , wherein the first via is formed before the first trench is formed.
15. The method of forming a semiconductor structure having at least a contact plug as in claim 11 , wherein the first via exposes the source/drain region of the transistor, and after forming the first via, a silicide layer is formed on the source/drain region exposed by the first via.
16. The method of forming a semiconductor structure having at least a contact plug as in claim 10 , further comprising forming a second contact plug disposed in the second ILD layer to electrically connect the gate of the transistor.
17. The method of forming a semiconductor structure having at least a contact plug as in claim 16 , wherein the first contact plug is formed before the second contact plug is formed.
18. The method of forming a semiconductor structure having at least a contact plug as in claim 16 , wherein the first contact plug is formed after the second contact plug is formed.
19. The method of forming a semiconductor structure having at least a contact plug as in claim 16 , wherein the step of forming the second contact plug comprises a second dual damascene process.
20. The method of forming a semiconductor structure having at least a contact plug as in claim 16 , wherein the second contact plug comprises copper.