Encapsulant for a semiconductor device
View Patent ↗A mold compound is provided for encapsulating a semiconductor device ( 101 ). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.
1. A mold compound for encapsulating an electronic device, the mold compound comprising:
silica fillers;
epoxy resin system; and
beneficial ions that are beneficial with respect to copper ball bond corrosion,
wherein a total level of the beneficial ions in the mold compound is at least approximately 100 ppm, and wherein the beneficial ions are ions selected from the group consisting of formate (HCOO) − , acetate (CH 3 CO 2 ) − , phosphate (PO 4 ) 3− , silicate (SiO 4 ) 4− , nitrate (NO 3 ) − , nitrite (NO 2 ) − , and sulfate (SO 4 ) 2− .
2. The mold compound of claim 1 , wherein the beneficial ions are a combination of formate (HCOO) − and acetate (CH 3 CO 2 ) − ions.
3. The mold compound of claim 1 ,
wherein the mold compound comprises at least approximately 70% by weight silica fillers and at least approximately 10% by weight epoxy resin system, and
the total level of the beneficial ions in the mold compound is less than or equal to 2000 ppm.
4. The mold compound of claim 1 ,
wherein a pH level of the mold compound is greater than or equal to 6.5, and
a level of chloride ions in the mold compound is less than or equal to 20 ppm.
5. The mold compound of claim 1 ,
wherein a pH level of the mold compound is 6.0-8.0,
a level of chloride ions in the mold compound is less than or equal to 5 ppm, and
an operating voltage level of the electronic device is less than or equal to 65V.
6. The mold compound of claim 1 ,
wherein a pH level of the mold compound is greater than or equal to 5.0,
a level of chloride ions in the mold compound is less than or equal to 10 ppm, and
an operating voltage level of the electronic device is less than or equal to 6V.
7. The mold compound of claim 1 , wherein at least one of:
a moisture absorption level of the mold compound is less than 0.3% by weight,
an oxalate ion level of the mold compound is less than or equal to 50 ppm, and
a magnesium ion level of the mold compound is from 2 ppm to 200 ppm.
8. A mold compound for encapsulating an electronic device, a pH level of the mold compound being greater than or equal to 6.5, and a level of chloride ions in the mold compound being less than or equal to 20 ppm.
9. The mold compound of claim 8 ,
wherein the mold compound comprises at least approximately 70% by weight silica fillers, and at least approximately 10% by weight epoxy resin system, and
a pH level of the mold compound is from 6.5 to 7.5.
10. The mold compound of claim 8 ,
wherein a pH level of the mold compound is greater than or equal to 6.0,
a level of chloride ions in the mold compound is less than or equal to 5 ppm, and
an operating voltage level of the electronic device is less than or equal to 65V.
11. The mold compound of claim 8 ,
wherein a pH level of the mold compound is greater than or equal to 7.0,
a level of chloride ions in the mold compound is less than or equal to 10 ppm, and
an operating voltage level of the electronic device is less than or equal to 65V.
12. The mold compound of claim 8 ,
wherein a pH level of the mold compound is greater than or equal to 5.0,
a level of chloride ions in the mold compound is less than or equal to 10 ppm, and
an operating voltage level of the electronic device is less than or equal to 6V.
13. The mold compound of claim 8 , wherein an operating voltage level of the electronic device is less than or equal to 6V.
14. The mold compound of claim 8 , wherein at least one of:
a moisture absorption level of the mold compound is less than 0.3% by weight,
an oxalate ion level of the mold compound is less than or equal to 50 ppm, and
a magnesium ion level of the mold compound is from 2 ppm to 200 ppm.
15. A semiconductor device package comprising:
an electronic device that includes an aluminum bond pad;
a copper wire bonded to the aluminum bond pad; and
an encapsulant, the electronic device and the copper wire being encapsulated by the encapsulant,
wherein the encapsulant comprises:
epoxy resin system, and
beneficial ions that are beneficial with respect to copper ball bond corrosion, a total level of the beneficial ions in the encapsulant being at least approximately 20 ppm.
16. The semiconductor device package of claim 15 , wherein the beneficial ions are ions selected from the group consisting of formate, acetate, carbonate, phosphate, silicate, nitrate, nitrite, and sulfate.
17. The semiconductor device package of claim 15 ,
wherein the encapsulant comprises at least approximately 70% by weight silica fillers, and at least approximately 10% by weight epoxy resin system,
a pH level of the encapsulant is from 6.5 to 7.5, and
a level of chloride ions in the encapsulant is less than or equal to 20 ppm.
18. The semiconductor device package of claim 15 ,
wherein a pH level of the encapsulant is greater than or equal to 5.0,
a level of chloride ions in the encapsulant is less than or equal to 10 ppm, and
an operating voltage level of the electronic device is less than or equal to 6V.
19. The semiconductor device package of claim 15 , wherein at least one of:
a moisture absorption level of the encapsulant is less than 0.3% by weight,
an oxalate ion level of the encapsulant is less than or equal to 50 ppm, and
a magnesium ion level of the encapsulant is from 2 ppm to 200 ppm.