Pattern measurement apparatus and pattern measurement method
View Patent ↗Referring to design data for a sample, a measurement region is defined at a portion in the design data which has no step in an edge of a pattern. In addition, an edge as a characteristic portion is detected from the design data, and an edge as a characteristic portion corresponding to the characteristic portion of the design data is detected from a secondary electron image. Then, the measurement region is positioned and located in a secondary electron image based on a positional relationship between the edge of the design data and the edge of the secondary electron image. A width of the pattern is measured on the basis of a distance between the two edges included in the measurement region thus located.
1. A pattern measurement apparatus comprising:
an electron beam irradiation unit configured to irradiate a surface of a sample with an electron beam;
a detector configured to detect secondary electrons generated on the surface of the sample;
a signal processor configured to create a secondary electron image of the surface of the sample based on a detection signal from the detector;
a measurement region definition unit configured to define a measurement region in design data while referring to the design data for the sample;
a first detection unit configured to detect a characteristic portion of the design data;
a second detection unit configured to detect a characteristic portion of the secondary electron image;
an alignment unit configured to position and locate the measurement region of the design data in the secondary electron image based on a positional relationship between the characteristic portion of the design data and the characteristic portion of the secondary electron image; and
a measurement unit configured to measure a width of a pattern based on positions of edges of the pattern inside the measurement region of the secondary electron image.
2. The pattern measurement apparatus according to claim 1 , wherein each of the first detection unit and the second detection unit detects an edge extending in a measurement direction of the corresponding measurement region as the characteristic portion.
3. The pattern measurement apparatus according to claim 1 , wherein
the first detection unit detects a corner of a pattern in the design data as the characteristic portion, and
the second detection unit detects an inflection point of an edge of the pattern in the secondary electron image as the characteristic portion.
4. The pattern measurement apparatus according to claim 1 , wherein the alignment unit positions the measurement region based on a positional relationship of two characteristic portions of the design data with two corresponding characteristic portions of the secondary electron image.
5. The pattern measurement apparatus according to claim 1 , further comprising a size adjustment unit configured to, when the inflection point of the edge of the pattern is included in the measurement region located in the secondary electron image, adjust a length of the measurement region to be equal to or below twice a distance from the center of the measurement region to the inflection point.
6. The pattern measurement apparatus according to claim 1 , wherein the measurement region definition unit locates the measurement region at a portion of the pattern of the design data, the portion having no stepped portion causing a change in a line width.
7. The pattern measurement apparatus according to claim 1 , wherein
the design data comprises a pattern and a space each formed of a plurality of divided rectangular blocks, and
the apparatus further comprises a measurement object designation unit configured to designate blocks having any of a predetermined length and a predetermined width among the blocks in the design data in a lump as measurement objects in which the measurement region is defined.
8. The pattern measurement apparatus according to claim 1 , wherein
the design data comprises a pattern and a space each formed of a plurality of divided rectangular blocks, and
the apparatus further comprises a measurement object designation unit configured to detect a stepped portion having a size equal to or above a prescribed value from the design data and to designate a block adjacent to the detected stepped portion and blocks located around the adjacent block as measurement objects in which the measurement region is defined.
9. A pattern measurement method for defining a measurement region in a secondary electron image and finding a line width of a pattern in the measurement region using positions of edges of the pattern, the method comprising the steps of:
defining a measurement region in design data corresponding to a field of view of the secondary electron image;
detecting a characteristic portion of the design data;
detecting a characteristic portion of the secondary electron image; and
positioning and locating the measurement region of the design data in the secondary electron image based on a positional relationship between the characteristic portion of the design data and the characteristic portion of the secondary electron image.
10. The pattern measurement method according to claim 9 , wherein each of the characteristic portion of the design data and the characteristic portion of the secondary electron image is an edge of a pattern extending in a measurement direction of the measurement region.
11. The pattern measurement method according to claim 9 , wherein
the characteristic portion of the design data is a corner of a pattern in the design data, and
the characteristic portion of the secondary electron image is an inflection point of the edge of the pattern in the secondary electron image.
12. The pattern measurement method according to claim 9 , wherein the measurement region is positioned on the basis of a positional relationship of two characteristic portions of the design data with two corresponding characteristic portions of the secondary electron image.
13. The pattern measurement method according to claim 9 , further comprising the step of, when the inflection point of the edge of the pattern is included in the measurement region located in the secondary electron image, adjusting a length of the measurement region to be equal to or below twice a distance from the center of the measurement region to the inflection point.
14. The pattern measurement method according to claim 9 , wherein the measurement region is located at a portion of the pattern of the design data, the portion having no a stepped portion causing a change in a line width.
15. The pattern measurement method according to claim 9 , wherein
the design data comprises a pattern and a space each formed of a plurality of divided rectangular blocks, and
the method further comprises the step of designating blocks having any of a predetermined length and a predetermined width among the divided rectangular blocks in the design data in a lump as measurement objects in which the measurement region is defined.
16. The pattern measurement apparatus according to claim 9 , wherein
the design data comprises a pattern and a space each formed of a plurality of divided rectangular blocks, and
the apparatus further comprises the steps of:
detecting a stepped portion having a size equal to or above a prescribed value from the design data; and
designating a block located adjacent to the detected stepped portion and blocks located around the adjacent block as measurement objects in which the measurement region is defined.