Bond pad structure and method of manufacturing the same
View Patent ↗A method of manufacturing a bond pad structure, comprising the steps of forming a pad material layer on a passivation layer, forming a protection layer on the pad material layer, performing an etching process to pattern the protection layer and the pad material layer into a bond pad structure, and removing the protection layer on the bond pad structure.
1. A method of manufacturing a bond pad structure, comprising the steps of:
forming a pad material layer on a passivation layer;
forming a protection layer on said pad material layer;
after forming said protection layer on said pad material layer, using a photoresist as a mask to perform an etching process for patterning said protection layer and said pad material layer into a bond pad structure; and
after patterning said protection layer and said pad material layer, completely removing said protection layer on said bond pad structure.
2. The method of manufacturing a bond pad structure according to claim 1 , further comprising the step of forming a barrier layer between said passivation layer and said pad material layer.
3. The method of manufacturing a bond pad structure according to claim 1 , wherein the step of removing said protection layer comprises the step of removing said protection layer by strip process or wet etching process.
4. The method of manufacturing a bond pad structure according to claim 1 , wherein the material of said protection layer is selected from the group of dielectric undoped SiC, doped SiC, SiON, oxide or nitride, or inert Ti or TiN.
5. The method of manufacturing a bond pad structure according to claim 1 , wherein the material of said pad material layer comprises Al or AlCu.
6. The method of manufacturing a bond pad structure according to claim 1 , wherein said passivation layer is a SiN-PEOX-SiN multilayer.
7. A method of manufacturing a bond pad structure, comprising the steps of:
forming a pad material layer on a first passivation layer;
forming a protection layer on said pad material layer;
after forming said protection layer on said pad material layer, performing a first etching process to pattern said protection layer and said pad material layer into a bond pad structure;
forming a second passivation layer on said bond pad structure and said first passivation layer; and
performing a second etching process to remove a part of said second passivation layer and said protection layer so that said bond pad structure is exposed.
8. The method of manufacturing a bond pad structure according to claim 7 , further comprising the step of forming a bottom anti-reflective coating on said protection layer.
9. The method of manufacturing a bond pad structure according to claim 7 , further comprising the step of forming a barrier layer between said first passivation layer and said pad material layer.
10. The method of manufacturing a bond pad structure according to claim 7 , wherein the step of removing said protection layer comprises the step of removing said protection layer by strip process or wet etching process.
11. The method of manufacturing a bond pad structure according to claim 7 , wherein the material of said protection layer is selected from the group of dielectric undoped SiC, doped SiC, SiON, oxide or nitride, or inert Ti or TiN.
12. The method of manufacturing a bond pad structure according to claim 7 , wherein the material of said pad material layer comprises Al.
13. The method of manufacturing a bond pad structure according to claim 7 , wherein said first passivation layer is a SiN-PEOX multilayer.
14. The method of manufacturing a bond pad structure according to claim 7 , wherein said second passivation layer is a FSG-SiN multilayer.